Research Group: Semiconductor Components (SC)

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Article

Chen, X.Y. and Salm, C. and Hooge, F.N. and Woerlee, P.H. (1999) 1/f noise in polycrystalline SiGe analyzed in terms of mobility fluctuations. Solid-State Electronics, 43 (9). pp. 1715-1724. ISSN 0038-1101

Sowariraj, M.S.B. and Jong, P.C. de and Salm, C. and Mouthaan, A.J. and Kuper, F.G. (2005) A 3-D circuit model to evaluate CDM performance of ICs. Microelectronics Reliability, 45 (9-11). pp. 1425-1429. ISSN 0026-2714

Blanco Carballo, V.M. and Fransen, M. and Graaf, H. van der and Lu, J. and Schmitz, J. (2011) A CMOS compatible Microbulk Micromegas-like detector using silicon oxide as spacer material. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 629 (1). pp. 118-122. ISSN 0168-9002

Groenland, A.W. and Wolters, R.A.M. and Kovalgin, A.Y. and Schmitz, J. (2011) A Difference in Using Atomic Layer Deposition or Physical Vapour Deposition TiN as Electrode Material in Metal-Insulator-Metal and Metal-Insulator-Silicon Capacitors. Journal of Nanoscience and Nanotechnology, 11 (9). pp. 8368-8373. ISSN 1533-4880

Blanco Carballo, Víctor Manuel and Chefdeville, Maximilien and Fransen, Martin and Graaf, Harry van der and Melai, Joost and Salm, Cora and Schmitz, Jurriaan and Timmermans, Jan (2008) A Radiation Imaging Detector Made by Postprocessing a Standard CMOS Chip. IEEE Electron Device Letters, 29 (6). pp. 585-588. ISSN 0741-3106

Holleman, J. and Hasper, A. and Middelhoek, J. (1991) A Reflectometric Study of the Reaction between Si and WF6 during W-LPCVD on Si and of the Renucleation during the H2 Reduction of WF6. Journal of the Electrochemical Society, 138 (3). pp. 783-788. ISSN 0013-4651

Melai, Joost and Breskin, Amos and Cortesi, Marco and Bilevych, Yevgen and Fransen, Martin and Graaf, Harry van der and Visschers, Jan and Blanco Carballo, Víctor and Salm, Cora and Schmitz, Jurriaan (2010) A UV sensitive integrated micromegas with timepix readout. Nuclear instruments and methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 628 . pp. 133-137. ISSN 0168-9002

Masa, Peter and Hoen, Klaas and Wallinga, Hans (1994) A high-speed analog neural processor. IEEE Micro, 14 (3). pp. 40-50. ISSN 0272-1732

Kovalgin, A.Y. and Holleman, J. and Iordache, G. (2007) A pillar-shaped antifuse-based silicon chemical sensor and actuator. IEEE sensors journal, 7 (1). pp. 18-27. ISSN 1530-437X

Walters, R.J. and Loon, R.V.A. van and Brunets, I. and Schmitz, J. and Polman, A. (2009) A silicon-based electrical source of surface plasmon polaritons. Nature Materials, 8 (12). pp. 1-4. ISSN 1476-1122

Kovalgin, A.Y. and Holleman, J. (2001) A study of morphology and texture of LPCVD germanium-silicon films. Journal de physique, IV . pp. 47-54. ISSN 1155-4339

Schmitz, J. (2007) Adding functionality to microchips by wafer post-processing. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 576 (1). pp. 142-149. ISSN 0168-9002

Kovalgin, Alexey Y. and Tiggelman, Natalie and Wolters, Rob A.M. (2012) An Area-Correction Model for Accurate Extraction of Low Specific Contact Resistance. IEEE Transactions on Electron Devices, 59 (2). 426-432 . ISSN 0018-9383

Kovalgin, A.Y. and Hof, A.J. and Schmitz, J. (2005) An approach to modeling of silicon oxidation in a wet ultra-diluted ambient. Microelectronic Engineering, 80 . pp. 432-435. ISSN 0167-9317

Chefdeville, M. and Colas, P. and Giomataris, Y. and Graaf, H. van der and Heijne, E.H.M. and Putten, S. van der and Salm, C. and Schmitz, J. and Smits, S.M. and Timmermans, J. and Visschers, J.L. (2005) An electron-multiplying ‘Micromegas’ grid made in silicon wafer post-processing technology. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 556 (2). pp. 490-494. ISSN 0168-9002

Niehof, J. and Graaff, H.C. de and Mouthaan, A.J. and Verweij, J.F. (1995) An empirical model for early resistance changes due to electromigration. Solid-State Electronics, 38 (10). pp. 1817-1827. ISSN 0038-1101

Melai, Joost and Lyashenko, Alexey and Breskin, Amos and Graaf, Harry van der and Timmermans, Jan and Visschers, Jan and Salm, Cora and Schmitz, Jurriaan (2010) An integrated micromegas UV-photon detector. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 633 . pp. 194-197. ISSN 0168-9002

Tosic Golo, Natasa and Kuper, Fred G. and Mouthaan, Ton J. (2002) Analysis of the Electrical Breakdown in Hydrogenated Amorphous Silicon Thin-Film Transistors. IEEE Transactions on Electron Devices, 49 (6). pp. 1012-1018. ISSN 0018-9383

Hueting, Raymond J.E. and Toorn, Ramses van der (2005) Analysis of the Kirk effect in silicon-based bipolar transistors with a nonuniform collector profile. IEEE Transactions on Electron Devices, 52 (11). 2489 - 2495. ISSN 0018-9383

Hueting, R.J.E. and Heringa, Anco (2006) Analysis of the subthreshold current of pocket or halo-implanted nMOSFETs. IEEE Transactions on Electron Devices, 53 (7). pp. 1641-1646. ISSN 0018-9383

Ramaneti, R. and Lodder, J.C. and Jansen, R. (2007) Anomalous Hall effect in anatase Co:TiO2 ferromagnetic semiconductor. Applied physics letters, 91 . 012502. ISSN 0003-6951

Sasse, Guido T. and Schmitz, Jurriaan (2008) Application and evaluation of the RF charge-pumping technique. IEEE Transactions on Electron Devices, 55 (3). pp. 881-889. ISSN 0018-9383

Blanco Carballo, V. and Chefdeville, M.A. and Decowski, M.P. and Fransen, M. and van der Graaf, H. and Koppert, W.J.C. and Schmitz, J. (2010) Applications of GridPix detectors. Journal of Instrumentation, 5 (2). pp. 1-5. ISSN 1748-0221

Bystrova, S. and Aarnink, A.A.I. and Holleman, J. and Wolters, R.A.M. (2005) Atomic Layer Deposition of W1.5N Barrier Films for Cu Metallization: Process and Characterization. Journal of the Electrochemical Society, 152 (7). G522-G527. ISSN 0013-4651

Saris, F.W. and Custer, J.S. and Schreutelkamp, R.J. and Liefting, J.R. and Wijburg, R. and Wallinga, H. (1992) Avoiding dislocations in ion-implanted silicon. Microelectronic Engineering, 19 (1-4). pp. 357-362. ISSN 0167-9317

Tiggelman, M.P.J. and Reimann, K. and Klee, M. and Mauczok, R. and Keur, W. and Hueting, R.J.E. (2010) BaxSr1−xTi1.02O3 metal–insulator–metal capacitors on planarized alumina substrates. Thin Solid Films, 518 (10). pp. 2854-2959. ISSN 0040-6090

Bearda, Twan and Mertens, Paul W. and Heyns, Marc M. and Wallinga, Hans and Woerlee, Pierre (2000) Breakdown and Recovery of Thin Gate Oxides. Japanese Journal of Applied Physics, Part 2: Letters, 39 (6b). L582-L584. ISSN 0021-4922

Herfst, Roelof Willem (2008) Center-Shift Method for the Characterization of Dielectric Charging in RF MEMS Capacitive Switches. IEEE Transactions on Semiconductor Manufacturing, 21 (2). pp. 148-153. ISSN 0894-6507

Hurley, P.K. and Cherkaoui, K. and McDonnell, S. and Hughes, G. and Groenland, A.W. (2007) Characterisation and passivation of interface defects in (1 0 0)/Si/SiO2/HfO2/TiN gate stacks. Microelectronics Reliability, 47 (8). pp. 1195-1201. ISSN 0026-2714

Boogaard, A. and Kovalgin, A.Y. and Brunets, I. and Aarnink, A.A.I. and Holleman, J. and Wolters, R.A.M. and Schmitz, J. (2007) Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD. Surface & Coatings Technology, 201 (22-23). pp. 8976-8980. ISSN 0257-8972

Blanco Carballo, V.M. and Chefdeville, M. and Colas, P. and Giomataris, Y. and Graaf, H. van der and Gromov, V. and Hartjes, F. and Kluit, R. and Koffeman, E. and Salm, C. and Schmitz, J. and Smits, S.M. and Timmermans, J. and Visschers, J.L. (2007) Charge amplitude distribution of the Gossip gaseous pixel detector. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 583 (1). pp. 42-48. ISSN 0168-9002

Kovalgin, A.Y. and Boogaard, A. and Brunets, I. and Holleman, J. and Schmitz, J. (2007) Chemical modeling of a high-density inductively-coupled plasma reactor containing silane. Surface & Coatings Technology, 201 . pp. 8849-8853. ISSN 0257-8972

Roy, D. and Klootwijk, J.H. and Verhaegh, N.A.M. and Roosen, H.H.A.J. and Wolters, R.A.M. (2009) Comb Capacitor Structures for On-Chip Physical Uncloneable Function. IEEE Transactions on Semiconductor Manufacturing, 22 (1). pp. 96-102. ISSN 0894-6507

Ragay, F.W. and Aarnink, A.A.I. and Wallinga, H. (1991) Complementary vertical bipolar transistor process using high-energy ion implantation. Electronics Letters, 27 (23). pp. 2141-2143. ISSN 0013-5194

Verweij, J.F. and Brombacher, A.C. and Lunenborg, M.M. (1994) Component lifetime modelling. Quality and Reliability Engineering International, 10 (4). pp. 263-271. ISSN 0748-8017

Lunenborg, M.M. and Graaff, H.C. de and Mouthaan, A.J. and Verweij, J.F. (1996) Comprehensive physical modeling of NMOSFET hot-carrier-induced degradation. Microelectronics Reliability, 36 (11/12). pp. 1667-1670. ISSN 0026-2714

Van Bui, Hao and Kovalgin, Alexey and Schmitz, Jurriaan and Wolters, Rob A.M. (2013) Conduction and electric field effect in ultra-thin TiN films. Applied physics letters, 103 (5). 051904. ISSN 0003-6951

Isai, Gratiela I. and Holleman, Jisk and Wallinga, Hans and Woerlee, Pierre H. (2004) Conduction and trapping mechanisms in SiO2 films grown near room temperature by multipolar electron cyclotron resonance plasma enhanced chemical vapor deposition. Journal of Vacuum Science & Technology B: Microelectronics and nanometer structures, 22 (3). pp. 1022-1029. ISSN 1071-1023

Nguyen, V.H. and Hof, A.J. and Kranenburg, H. van and Woerlee, P.H. and Weimar, F. (2001) Copper chemical mechanical polishing using a slurry-free technique. Microelectronic Engineering, 55 (1-4). pp. 305-312. ISSN 0167-9317

Friedlein, R. and Fleurence, A. and Aoyagi, K. and Jong, M.P. de and Van Bui, H. and Wiggers, F.B. and Yoshimoto, S. and Koitaya, T. and Shimizu, S. and Noritake, H. and Mukai, K. and Yoshinobu, J. and Yamada-Takamura, Y. (2014) Core level excitations — A fingerprint of structural and electronic properties of epitaxial silicene. The journal of Chemical Physics, 140 (18). pp. 1-6. ISSN 0021-9606

Stavitski, N. and Klootwijk, J.H. and Zeijl, H.W. van and Kovalgin, A.Y. and Wolters, R.A.M. (2009) Cross-Bridge Kelvin resistor structures for reliable measurement of low contact resistances and contact interface characterization. IEEE Transactions on Semiconductor Manufacturing, 22 (1). pp. 146-152. ISSN 0894-6507

Merticaru, A.R. and Mouthaan, A.J. and Kuper, F.G. (2006) Current Degradation of a-Si:H/SiN TFTs at Room Temperature and Low Voltages. IEEE Transactions on Electron Devices, 53 (9). pp. 2273-2279. ISSN 0018-9383

Hendriks, E.A. and Zijlstra, R.J.J. and Middelhoek, J. (1988) Current noise in (111) n-channel Si-MOSFET's at T = 4.2 K. Physica B+C, 147 (2-3). pp. 297-304. ISSN 0378-4363

Mouthaan, A.J. and Salm, C. and Lunenborg, M.M. and Wolf, M.A.R.C. de and Kuper, F.G. (2000) Dealing with hot-carrier aging in nMOS and DMOS, models, simulations and characterizations. Microelectronics Reliability, 40 (1). pp. 909-917. ISSN 0026-2714

Kazmi, S.N.R. and Salm, C. and Schmitz, J. (2013) Deep reactive ion etching of in situ boron doped LPCVD $Ge_{0.7}Si_{0.3}$ using $SF_6$ and $O_2$ plasma. Microelectronic engineering, 110 . pp. 311-314. ISSN 0167-9317

Kazmi, S.N.R. and Salm, C. and Schmitz, J. (2013) Deep reactive ion etching of in situ boron doped LPCVD $Ge_{0.7}Si_{0.3}$ using $SF_6$ and $O_2$ plasma. Microelectronic engineering, 110 . pp. 311-314. ISSN 0167-9317

Nguyen, V. and Kranenburg, H. van and Woerlee, P. (2000) Dependency of dishing on polish time and slurry chemistry in Cu CMP. Microelectronic Engineering, 50 (1-4). pp. 403-410. ISSN 0167-9317

Klootwijk, Johan H. and Kranenburg, Herma van and Woerlee, Pierre H. and Wallinga, Hans (1999) Deposited Inter-Polysilicon Dielectrics for Nonvolatile Memories. IEEE Transactions on Electron Devices, 1999 (7). pp. 1435-1445. ISSN 0018-9383

Haart, L.G.J. de and Kuipers, R.A. and Vries, K.J. de and Burggraaf, A.J. (1991) Deposition and Electrical Properties of Thin Porous Ceramic Electrode Layers for Solid Oxide Fuel Cell Application. Journal of the Electrochemical Society, 138 (7). pp. 1970-1975. ISSN 0013-4651

Rangarajan, Balaji and Kovalgin, Alexey Y. and Schmitz, Jurriaan (2013) Deposition and properties of silicon oxynitride films with low propagation losses by inductively coupled PECVD at 150 °C. Surface and coatings technology, 230 . pp. 46-50. ISSN 0257-8972

Merticaru, A.R. and Mouthaan, A.J. and Kuper, F.G. (2006) Determination of the contribution of defect creation and charge trapping to the degradation of a-Si:H/SiN TFTs at room temperature and low voltages. Journal of Non-Crystalline Solids, 352 (36-37). pp. 3849-3853. ISSN 0022-3093

Verweij, J.F. and Klootwijk, J.H. (1996) Dielectric breakdown I: A review of oxide breakdown. Microelectronics Journal, 27 (7). pp. 611-622. ISSN 0026-2692

Klootwijk, J.H. and Verweij, J.F. and Rem, J.B. and Bijlsma, S. (1996) Dielectric breakdown II: Related projects at the University of Twente. Microelectronics Journal, 27 (7). pp. 623-632. ISSN 0026-2692

Salm, C. and Veen, D.T. and Gravesteijn, D.J. and Holleman, J. and Woerlee, P.H. (1997) Diffusion and Electrical Properties of Boron and Arsenic Doped Poly-Si and Poly-GexSi1�x (x ~ 0.3) as Gate Material for Sub-0.25 µm Complementary Metal Oxide Semiconductor Applications. Journal of the Electrochemical Society, 144 (10). pp. 3665-3673. ISSN 0013-4651

Visschers, J.L. and Blanco Carballo, V.M. and Chefdeville, M. and Colas, P. and Graaf, H. van der and Schmitz, J. and Smits, S.M. and Timmermans, J. (2007) Direct readout of gaseous detectors with tiled CMOS circuits. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 572 (1). pp. 203-204. ISSN 0168-9002

Merticaru, A.R. and Mouthaan, A.J. (2001) Dynamics of metastable defects in a-Si:H/SiN TFTs. Thin Solid Films, 383 (1-2). pp. 122-124. ISSN 0040-6090

Petrescu, V. and Mouthaan, A.J. and Schoenmaker, W. (1997) Early resistance change and stress/electromigrationmodeling in aluminium interconnects. Microelectronics Reliability, 37 (10-11). pp. 1491-1494. ISSN 0026-2714

Nguyen, Van Hieu and Salm, Cora (2010) Effect of current crowding on electromigration lifetime investigated by simulation and experiment. Computational Materials Science, 49 (4). pp. 235-238. ISSN 0927-0256

Bijlsma, Sipke J. and Kranenburg, Herma van and Nieuwesteeg, K.J.B.M. and Pitt, Michael G. and Verweij, Jan F. (1996) Electrical breakdown of amorphous hydrogenated silicon rich silicon nitride thin film diodes. IEEE Transactions on Electron Devices, 43 (9). pp. 1592-1601. ISSN 0018-9383

Roy, Deepu and Zandt, Micha A.A. in 't and Wolters, Rob A.M. (2011) Electrical characterization of Thin-Film structures with redeposited sidewall. IEEE Transactions on Electron Devices, 58 (4). pp. 924-930. ISSN 0018-9383

Mullem, C.J. van and Tilmans, H.A.C. and Mouthaan, A.J. and Fluitman, J.H.J. (1992) Electrical cross-talk in two-port resonators the resonant silicon beam force sensor. Sensors and Actuators A: Physical, 31 (1-3). pp. 168-173. ISSN 0924-4247

Tiggelaar, R.M. and Groenland, A.W. and Sanders, R.G.P. and Gardeniers, J.G.E. (2009) Electrical properties of low pressure chemical vapor deposited silicon nitride thin films for temperatures up to 650 °C. Journal of Applied Physics, 105 (3). 033714. ISSN 0021-8979

Kovalgin, A.Y. and Boogaard, A. and Brunets, I. and Aarnink, A.A.I. and Wolters, R.A.M. (2009) Electrical properties of plasma-deposited silicon oxide clarified by chemical modeling. ECS Transactions, 25 (8). pp. 23-32. ISSN 1938-5862

Niehof, J. and Flinn, P.A. and Maloney, T.J. (1993) Electromigration early resistance increase measurements. Quality and Reliability Engineering International, 9 (4). pp. 295-298. ISSN 0748-8017

Zhou, M.-J. and Holleman, J. and Wallinga, H. (1994) Elimination or Minimisation of Optoelectronic Crosstalk between Photodiodes and Electronic Device in OEIC on Si. Electronics Letters, 30 (11). pp. 895-897. ISSN 0013-5194

Mchedlidze, T. and Arguirov, T. and Kittler, M. and Hoang, T. and Holleman, J. and Le Minh, P. and Schmitz, J. (2008) Engineering of dislocation-loops for light emission from silicon diodes. Solid State Phenomena, 131-13 . pp. 303-308. ISSN 1012-0394

Stavitski, Natalie and Dal, Mark J.H. van and Lauwers, Anne and Vrancken, Christa and Kovalgin, Alexey Y. and Wolters, Rob A.M. (2008) Evaluation of Transmission Line Model Structures for Silicide-to-Silicon Specific Contact Resistance Extraction. IEEE Transactions on Electron Devices, 55 (5). pp. 1170-1176. ISSN 0018-9383

Steen, Jan-Laurens P.J. van der and Hueting, R.J.E. and Schmitz, J. (2009) Extracting Energy Band Offsets on Long-Channel Thin Silicon-on-Insulator MOSFETs. IEEE Transactions on Electron Devices, 56 (9). pp. 1999-2007. ISSN 0018-9383

Holleman, Jisk and Verweij, Jan F. (1993) Extraction of Kinetic Parameters for the Chemical Vapor Deposition of Polycrystalline Silicon at Medium and Low Pressures. Journal of the Electrochemical Society, 140 (7). pp. 2089-2097. ISSN 0013-4651

Hemert, Tom van and Reimann, Klaus and Hueting, Raymond J.E. (2012) Extraction of second order piezoelectric parameters in bulk acoustic wave resonators. Applied physics letters, 100 (23). p. 232901. ISSN 0003-6951

Rajasekharan, B. and Hueting, R.J.E. and Salm, C. and Hemert, T. van and Wolters, R.A.M. and Schmitz, J. (2010) Fabrication and characterization of the charge-plasma diode. IEEE electron device letters, 31 (6). pp. 528-530. ISSN 0741-3106

Herfst, Rodolf W. and Steeneken, Peter G. and Tiggelman, Mark P.J. and Stulemeijer, Jiri and Schmitz, Jurriaan (2012) Fast RF-CV characterization through High-Speed 1-port S-Parameter measurements. IEEE Transactions on Semiconductor Manufacturing, 25 (3). pp. 310-316. ISSN 0894-6507

Nguyen, H.V. and Salm, C. and Krabbenborg, B.H. and Bisschop, J. and Mouthaan, A.J. Ton and Kuper, Fred G. (2004) Fast Thermal Cycling-Enhanced Electromigration in Power Metallization. IEEE Transactions on Device and Materials Reliability, 4 (2). pp. 246-255. ISSN 1530-4388

Nguyen, H. and Salm, C. and Vroemen, J. and Voets, J. and Krabbenborg, B.H. and Bisschop, J. and Mouthaan, A.J. and Kuper, F.G. (2002) Fast temperature cycling and electromigration induced thin film cracking multilevel interconnection: experiments and modeling. Microelectronics Reliability, 42 (9-11). pp. 1415-1420. ISSN 0026-2714

Luchies, J.R.M. and Kort, C.G.M. de and Verweij, J.F. (1995) Fast turn-on of an NMOS ESD protection transistor: measurements and simulations. Journal of Electrostatics, 36 (1). pp. 81-92. ISSN 0304-3886

Schmitz, Jurriaan and Thewes, Roland (2008) Foreword: Special issue devoted to the ESSDERC’07 conference. Solid-State Electronics, 52 (9). p. 1265. ISSN 0038-1101

Groenland, A.W. and Wolters, R.A.M. and Kovalgin, A.Y. and Schmitz, J. (2012) Four point probe structures with buried and surface electrodes for the electrical characterization of ultrathin conducting films. IEEE Transactions on Semiconductor Manufacturing, 25 (2). pp. 1-24. ISSN 0894-6507

Rem, J.B. and Leuw, M.C.V. de and Holleman, J. and Verweij, J.F. (1997) Furnace and rapid thermal crystallization of amorphous GexSi1-x and Si for thin film transistors. Thin Solid Films, 296 (1-2). pp. 152-156. ISSN 0040-6090

Blanco Carballo, V.M. and Bilevych, Y. and Chefdeville, M.A. and Fransen, M. and van der Graaf, H. and Salm, C. and Schmitz, J. and Timmermans, J. (2009) GEMGrid: a wafer post-processed GEM-like radiation detector. Nuclear instruments and methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 608 (1). pp. 86-91. ISSN 0168-9002

Campbell, M. and Heijne, E.H.M. and Llopart, X. and Colas, P. and Giganon, A. and Giomataris, Y. and Fornaini, A. and Graaf, H. van der and Kluit, P. and Timmermans, J. and Visschers, J.L. and Schmitz, J. (2005) GOSSIP: A vertex detector combining a thin gas layer as signal generator with a CMOS readout pixel array. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 560 (1). pp. 131-134. ISSN 0168-9002

Salm, C. and Klootwijk, J.H. and Ponomarev, Y. and Boos, P.W.M. and Gravesteijn, D.J. and Woerlee, P.H. (1998) Gate Current and Oxide Reliability in p+ Poly MOS Capacitors with Poly-Si and Poly-Ge0.3 Si0.7 Gate Material. IEEE Electron Device Letters, 19 (7). pp. 213-215. ISSN 0741-3106

Rangarajan, Balaji and Brunets, Ihor and Oesterlin, Peter (2011) Green Laser Crystallization of GeSi Thin Films and Dopant Activation. ECS Transactions, 35 (2). pp. 17-25. ISSN 1938-5862

Brunets, Ihor and Holleman, Jisk and Kovalgin, Alexey Y. and Aarnink, Tom and Boogaard, Arjen and Oesterlin, Peter (2006) Green Laser Crystallization of a-Si Films Using Preformed a-Si Lines. ECS Transactions, 3 (8). pp. 185-191. ISSN 1938-5862

Koppert, W.J.C. and Bakel, N. van and Bilevych, Y. and Colas, P. and Desch, K. and Fransen, M. and Graaf, H. van der and Hartjes, F. and Hessey, N.P. and Kaminski, J. and Schmitz, J. and Schön, R. and Zappon, F. (2013) GridPix detectors: production and beam test results. Nuclear instruments and methods in physics research. Section A: Accelerators, spectrometers, detectors and associated equipment, 732 . pp. 245-249. ISSN 0168-9002

Van Bui, H. and Groenland, A.W. and Aarnink, A.A.I. and Wolters, R.A.M. and Schmitz, J. and Kovalgin, A.Y. (2011) Growth Kinetics and Oxidation Mechanism of ALD TiN Thin Films Monitored by In Situ Spectroscopic Ellipsometry. Journal of the Electrochemical Society, 158 . pp. 214-220. ISSN 0013-4651

Van Bui, H. and Kovalgin, A.Y. and Wolters, R.A.M. (2012) Growth of sub-nanometer thin continuous TiN films by atomic layer deposition. ECS journal of solid state science and technology, 1 (6). pp. 285-290. ISSN 2162-8777

Ponomarev, Youri V. and Stolk, Peter A. and Salm, Cora and Schmitz, Jurriaan and Woerlee, Pierre H. (2000) High-Performance Deep SubMicron CMOS Technologies with Polycrystalline-SiGe Gates. IEEE Transactions on Electron Devices, 47 (4). pp. 848-855. ISSN 0018-9383

Van Bui, H. and Kovalgin, A.Y. and Aarnink, A.A.I. and Wolters, R.A.M. (2013) Hot-Wire generated atomic hydrogen and its impact on thermal ALD in $TiCl_4/NH_3$ system. ECS journal of solid state science and technology, 2 (4). pp. 149-155. ISSN 2162-8777

Sturm, J.M. and Zinine, A. and Wormeester, H. and Poelsema, B. and Bankras, R.G. and Holleman, J. and Schmitz, J. (2005) Imaging of oxide charges and contact potential difference fluctuations in Atomic Layer Deposited AL203 on Si. Journal of Applied Physics, 97 (6). 063709. ISSN 0021-8979

Kolhatkar, Jay and Hoekstra, Eric and Hof, André and Salm, Cora and Schmitz, Jurriaan and Wallinga, Hans (2005) Impact of Hot-Carrier Degradation on the Low-Frequency Noise in MOSFETs Under Steady-State and Periodic Large-Signal Excitation. IEEE Electron Device Letters, 26 (10). pp. 764-766. ISSN 0741-3106

Rink, Ingrid and Wali, Faisal and Knotter, D.M. (2009) Impact of metal-ion contaminated silica particles on gate oxide integrity. Solid State Phenomena, 145-14 . pp. 131-134. ISSN 1012-0394

Wali, Faisal and Knotter, D. Martin and Mud, Auke and Kuper, Fred G. (2009) Impact of particles in ultra pure water on random yield loss in IC production. Microelectronic Engineering, 86 (2). pp. 140-144. ISSN 0167-9317

Kovalgin, A.Y. and Boogaard, A. and Wolters, R.A.M. (2009) Impact of small deviations in EEDF on silane-based plasma chemistry. ECS Transactions, 25 (8). pp. 429-436. ISSN 1938-5862

Liefting, Reinoud and Wijburg, Rutger C. and Custer, Jonathan S. and Wallinga, Hans and Saris, Frans W. (1994) Improved device performance by multistep or carbon co-implants. IEEE Transactions on Electron Devices, 41 (1). pp. 50-55. ISSN 0018-9383

Wijburg, R.C.M. and Liefting, J.R. and Custer, J.S. and Wallinga, H. and Saris, F.W. (1992) Improvement of device characteristics by multiple step implants or introducing a C gettering layer. Microelectronic Engineering, 19 (1-4). pp. 543-546. ISSN 0167-9317

Klootwijk, J.H. and Weusthof, M.H.H. and Kranenburg, H. van and Woerlee, P.H. and Wallinga, H. (1996) Improvements of deposited interpolysilicon dielectric characteristics with RTP N2O-anneal. IEEE Electron Device Letters, 17 (7). pp. 358-359. ISSN 0741-3106

Holleman, J. and Hasper, A. and Middelhoek, J. (1991) In Situ Growth Rate Measurement of Selective LPCVD of Tungsten. Journal of the Electrochemical Society, 138 (4). pp. 989-993. ISSN 0013-4651

Bankras, R.G. and Holleman, J. and Schmitz, J. and Sturm, J.M. and Zinine, A. and Wormeester, H. and Poelsema, B. (2006) In Situ Reflective High-Energy Electron Diffraction Analysis During the Initial Stage of a Trimethylaluminum/Water ALD Process. Chemical Vapor Deposition, 12 (5). pp. 275-280. ISSN 0948-1907

Van Bui, H. and Aarnink, A.A.I. and Jong, M.P. de and Kovalgin, A.Y. (2013) In situ spectroscopic ellipsometry for studying the growth and optical constants of ALD AlN films. NEVAC Blad, 51 (3). pp. 24-31. ISSN 0169-9431

Rem, J.B. and Holleman, J. and Verweij, J.F. (1997) Incubation Time Measurements in Thin-Film Deposition. Journal of the Electrochemical Society, 144 (6). pp. 2101-2106. ISSN 0013-4651

Hoang, Tu and LeMinh, Phuong and Holleman, Jisk and Schmitz, Jurriaan (2006) Influence of Interface Recombination in Light Emission from Lateral Si-Based Light Emitting Devices. ECS Transactions, 3 (11). pp. 9-16. ISSN 1938-5862

Kranenburg, H. van and Woerlee, P.H. (1998) Influence of Overpolish Time on the Performance of W Damascene Technology. Journal of the Electrochemical Society, 145 (4). pp. 1285-1291. ISSN 0013-4651

Hoang, Tu and Holleman, Jisk and Le Minh, Puong and Schmitz, Jurriaan and Mchedlidze, Teimuraz and Arguirov, Tzanimir and Kittler, Martin (2007) Influence of dislocation loops on the near infrared light emission from silicon diodes. IEEE Transactions on Electron Devices, 54 (8). pp. 1860-1866. ISSN 0018-9383

Mchedlidze, T. and Arguirov, T. and Kittler, M. and Hoang, T. and Holleman, J. and Schmitz, J. (2007) Influence of electric field on spectral positions of dislocation-related luminescence peaks in silicon: Stark effect. Applied physics letters, 91 (20). p. 201113. ISSN 0003-6951

Lu, Jiwu and Liu, Wei and Kovalgin, Alexey Y. and Sun, Yun and Schmitz, Jurriaan (2011) Integration of Solar Cells on Top of CMOS Chips - Part II: CIGS Solar Cells. IEEE Transactions on Electron Devices, 58 (8). pp. 2620-2627. ISSN 0018-9383

Lu, Jiwu and Kovalgin, Alexey Y. and Werf, Karine H.M. van der and Schropp, Ruud E.I. and Schmitz, Jurriaan (2011) Integration of Solar Cells on Top of CMOS Chips Part I: a-Si Solar Cells. IEEE Transactions on Electron Devices, 58 (5). pp. 2014-2021. ISSN 0018-9383

Friedlein, R. and Van Bui, H. and Wiggers, F.B. and Yamada-Takamura, Y. and Kovalgin, A.Y. and Jong, M.P. de (2014) Interaction of epitaxial silicene with overlayers formed by exposure to Al atoms and O2 molecules. Journal of chemical physics, 140 . pp. 2047051-2047054. ISSN 0021-9606

Boselli, Gianluca and Meeuwsen, Stan and Mouthaan, Ton and Kuper, Fred (2001) Investigations on double-diffused MOS transistors under ESD zap conditions. Microelectronics Reliability, 41 (3). pp. 395-405. ISSN 0026-2714

Holleman, J. and Kuiper, A.E.T. and Verweij, J.F. (1993) Kinetics of the Low Pressure Chemical Vapor Deposition of Polycrystalline Germanium-Silicon Alloys from SiH4 and GeH4. Journal of the Electrochemical Society, 140 (6). pp. 1717-1722. ISSN 0013-4651

Boogaard, Arjen and Kovalgin, Alexey and Aarnink, Tom and Wolters, Rob and Holleman, Jisk and Brunets, Ihor and Schmitz, Jurriaan (2006) Langmuir-probe Characterization of an Inductively-Coupled Remote Plasma System intended for CVD and ALD. ECS Transactions, 2 (7). pp. 181-191. ISSN 1938-5862

Rangarajan, B. and Kovalgin, A.Y. and Oesterlin, P. and Kloe, R. de and Brunets, I. and Schmitz, J. (2012) Laterally confined large-grained Poly-GeSi films: crystallization and dopant activation using green laser. ECS journal of solid state science and technology, 1 (6). pp. 263-268. ISSN 2162-8777

Sturm, J.M. and Zinine, A. and Wormeester, H. and Bankras, R.G. and Holleman, J. and Schmitz, J. and Poelsema, B. (2005) Laterally resolved electrical characterisation of high-L oxides with non-contact Atomic Force Microscopy. Microelectronic Engineering, 80 . pp. 78-81. ISSN 0167-9317

Krabbenborg, B.H. and Bosma, A. and Graaff, H.C. de and Mouthaan, A.J. (1996) Layout to circuit extraction for three-dimensional thermal-electrical circuit simulation of device structures. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 15 (7). pp. 765-774. ISSN 0278-0070

Holleman, Jisk and Hasper, Albert and Kleijn, Chris R. (1993) Loading Effects on Kinetical and Electrical Aspects of Silane-Reduced Low-Pressure Chemical Vapor Deposited Selective Tungsten. Journal of the Electrochemical Society, 140 (3). pp. 818-825. ISSN 0013-4651

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Isai, Gratiela I. and Holleman, Jisk and Wallinga, Hans and Woerlee, Pierre H. (2004) Low Hydrogen Content Silicon Nitride Films Deposited at Room Temperature with an ECR Plasma Source. Journal of the Electrochemical Society, 151 (10). C649-C654. ISSN 0013-4651

Middelhoek, J. and Holleman, J. (1974) Low Phosphorus Concentrations in Si by Diffusion from Doped Oxide Layers. Journal of the Electrochemical Society, 121 (1). pp. 132-137. ISSN 0013-4651

Kazmi, S.N.R. and Aarnink, A.A.I. and Kovalgin, A.Y. and Salm, C. and Schmitz, J. (2011) Low Stress In Situ Boron Doped Poly SiGe Layers for MEMS Modular Integration with CMOS. ECS Transactions, 35 (30). pp. 45-52. ISSN 1938-5862

Tiggelman, N. and Kovalgin, A.Y. and Brennan, R. and Wolters, R.A.M. (2010) Low specific contact resistance of NiSi and PtSi to Si: impact of interface. Electrochemical and Solid-State Letters, 13 (12). H450-H453. ISSN 1099-0062

Wel, Arnoud P. van der and Klumperink, Eric A.M. and Kolhatkar, Jay S. and Hoekstra, Eric and Snoeij, Martijn F. and Salm, Cora and Wallinga, Hans and Nauta, Bram (2007) Low-Frequency Noise Phenomena in Switched MOSFETs. IEEE Journal of Solid-State Circuits, 42 (3). pp. 540-550. ISSN 0018-9200

Kovalgin, A.Y. and Holleman, J. and Iordache, G. and Jenneboer, T. and Falke, F. and Zieren, V. and Goossens, M.J. (2006) Low-Power, Antifuse-Based Silicon Chemical Sensor on a Suspended Membrane. Journal of the Electrochemical Society, 153 (9). H181-H188. ISSN 0013-4651

Kovalgin, Alexey and Holleman, Jisk (2006) Low-Temperature LPCVD of Polycrystalline GexSi1-��x Films with High Germanium Content. Journal of the Electrochemical Society, 153 (5). G363-G371. ISSN 0013-4651

Kovalgin, Alexey Y. and Isai, Gratiela and Holleman, Jisk and Schmitz, Jurriaan (2008) Low-Temperature SiO2 Layers Deposited by Combination of ECR Plasma and Supersonic Silane/Helium Jet. Journal of the Electrochemical Society, 155 (2). G21-G28. ISSN 0013-4651

Salm, Cora and Hoekstra, Eric and Kolhatkar, Jay S. and Hof, André J. and Wallinga, Hans and Schmitz, Jurriaan (2007) Low-frequency noise in hot-carrier degraded nMOSFETs. Microelectronics Reliability, 47 (4-5). pp. 577-580. ISSN 0026-2714

Kazmi, S.N.R. and Kovalgin, A.Y. and Aarnink, A.A.I. and Salm, C. and Schmitz, J. (2012) Low-stress highly-conductive in-situ boron doped Ge$_{0.7}$Si$_{0.3}$ films by LPCVD. ECS journal of solid state science and technology, 1 (5). P222-P226. ISSN 2162-8777

Brunets, I. and Aarnink, A.A.I. and Boogaard, A. and Kovalgin, A.Y. and Wolters, R.A.M. and Holleman, J. and Schmitz, J. (2007) Low-temperature LPCVD of Si nanocrystals from disilane and trisilane (Silcore®) embedded in ALD-alumina for non-volatile memory devices. Surface & Coatings Technology, 201 . pp. 9209-9214. ISSN 0257-8972

Rangarajan, B. and Kovalgin, A.Y. and Wörhoff, K. and Schmitz, J. (2013) Low-temperature deposition of high-quality siliconoxynitride films for CMOS-integrated optics. Optics letters, 38 (6). pp. 941-943. ISSN 0146-9592

Brunets, I. and Holleman, J. and Kovalgin, A.Y. and Boogaard, A. and Schmitz, J. (2009) Low-temperature fabricated TFTs on polysilicon stripes. IEEE Transactions on Electron Devices, 56 (8). pp. 1637-1644. ISSN 0018-9383

Sasse, Guido T. and Kuper, Fred G. and Schmitz, Jurriaan (2008) MOSFET Degradation Under RF Stress. IEEE Transactions on Electron Devices, 55 (11). pp. 3167-3174. ISSN 0018-9383

Vereshchagina, E. and Wolters, R.A.M. and Gardeniers, J.G.E. (2011) Measurement of reaction heats using a polysilicon-based microcalorimetric sensor. Sensors and Actuators A: Physical, 169 (2). pp. 308-316. ISSN 0924-4247

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Steeneken, Peter and Suy, Hilco and Herfst, Rodolf and Goossens, Martijn and Beek, Joost van and Schmitz, Jurriaan (2007) Micro-elektromechanische schakelaars voor mobiele telefoons. Nederlands Tijdschrift voor Natuurkunde, 73e jaargang (9). pp. 314-317. ISSN 0926-4264

Hasper, A. and Holleman, J. and Middelhoek, J. and Kleijn, C.R. and Hoogendoorn, C.J. (1991) Modeling and Optimization of the Step Coverage of Tungsten LPCVD in Trenches and Contact Holes. Journal of the Electrochemical Society, 138 (6). pp. 1728-1738. ISSN 0013-4651

Schoenmaker, Wim and Petrescu, Violeta (1999) Modeling electromigration as a fluid–gas system. Microelectronics Reliability, 39 (11). pp. 1667-1676. ISSN 0026-2714

Hemink, G.J. and Wijburg, R.C.M. and Wolbert, P.B.M. and Wallinga, H. (1991) Modeling of VIPMOS hot electron gate currents. Microelectronic Engineering, 15 (1-4). pp. 65-68. ISSN 0167-9317

Graaff, H.C. de and Kloosterman, W.J. (1995) Modeling of the collector epilayer of a bipolar transistor in the MEXTRAM model. IEEE Transactions on Electron Devices, 42 (2). pp. 274-282. ISSN 0018-9383

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Blanco Carballo, V.M. and Melai, J. and Salm, C. and Schmitz, J. (2009) Moisture resistance of SU-8 and KMPR as structural material. Microelectronic Engineering, 86 (4-6). pp. 765-768. ISSN 0167-9317

Groenland, A.W. and Kovalgin, A.Y. and Schmitz, J. and Wolters, R.A.M. (2011) Nano-Link Based Ultra Low Power Micro Electronic Hotplates for Sensors and Actuators. ECS Transactions, 35 (30). pp. 25-34. ISSN 1938-5862

Piccolo, G. and Kovalgin, A.Y. and Schmitz, J. (2012) Nanoscale carrier injectors for high luminescence Si-based LEDs. Solid-state electronics, 74 (Special Issue). pp. 43-48. ISSN 0038-1101

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Boogaard, A. and Kovalgin, A.Y. and Wolters, R.A.M. (2011) Negative Charge in Plasma Oxidized SiO2 Layers. ECS Transactions, 35 (4). pp. 259-272. ISSN 1938-5862

Boogaard, A. and Kovalgin, A.Y. and Wolters, R.A.M. (2009) Net Negative Charge in low-temperature SiO2 gate dielectric layers. Microelectronic Engineering, 86 (7-9). pp. 1707-1710. ISSN 0167-9317

Ackaert, J. and Wang, Z. and De Backer, E. and Colson, P. and Coppens, P. (2001) Non contact surface potential measurements for charging reduction during manufacturing of metal-insulator-metal capacitors. Microelectronics Reliability, 41 (9-10). pp. 1403-1407. ISSN 0026-2714

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Chen, X.Y. and Johansen, J.A. and Salm, C. and Rheenen, A.D. van (2001) On low-frequency noise of polycrystalline GexSi1-x for sub-micron CMOS technologies. Solid-State Electronics, 45 (11). pp. 1967-1971. ISSN 0038-1101

Schmitz, J.E.J. and Hasper, A. (1993) On the Mechanism of the Step Coverage of Blanket Tungsten Chemical Vapor Deposition. Journal of the Electrochemical Society, 140 (7). pp. 2112-2116. ISSN 0013-4651

Hof, A.J. and Kovalgin, A.Y. and Woerlee, P.H. and Schmitz, J. (2005) On the Oxidation Kinetics of Silicon in Ultradiluted H2O and D2O Ambient. Journal of the Electrochemical Society, 152 (9). F133-F137. ISSN 0013-4651

Tiggelman, M.P.J. and Reimann, K. and Van Rijs, F. and Schmitz, J. and Hueting, R.J.E. (2009) On the Trade-Off Between Quality Factor and Tuning Ratio in Tunable High-Frequency Capacitors. IEEE Transactions on Electron Devices, 56 (9). pp. 2128-2136. ISSN 0018-9383

Verweij, Jan and Lunenborg, Meindert (1995) On the design of a reliability circuit simulator. Microelectronics Reliability, 35 (1). pp. 101-103. ISSN 0026-2714

Van Bui, H. and Kovalgin, A.Y. and Wolters, R.A.M. (2013) On the difference between optically and electrically determined resistivity of ultra-thin titanium nitride films. Applied surface science, 269 . pp. 45-49. ISSN 0169-4332

Blanco Carballo, V.M. and Salm, C. and Smits, S.M. and Schmitz, J. and Chefdeville, M. and Graaf, H. van der and Timmermans, J. and Visschers, J.L. (2007) On the geometrical design of integrated micromegas detectors. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 576 (1). pp. 1-4. ISSN 0168-9002

Faber, Erik J. and Wolters, Rob A.M. and Schmitz, Jurriaan (2011) On the kinetics of platinum silicide formation. Applied Physics Letters, 98 (8). 082102. ISSN 0003-6951

Wijburg, Rutger C. and Ragay, Frederik W. (1991) On the recombination in the quasi-neutral base of polysilicon emitter transistors with interfacial oxides. Solid-State Electronics, 34 (12). pp. 1469-1471. ISSN 0038-1101

Luchies, Jan Marc and Kuper, Fred and Verweij, Jan (1993) On the use of DC measurements for ESD-related process monitoring. Quality and Reliability Engineering International, 9 (4). pp. 309-313. ISSN 0748-8017

Boogaard, A. and Kovalgin, A.Y. and Brunets, I. and Aarnink, A.A.I. and Wolters, R.A.M. and Holleman, J. and Schmitz, J. (2007) On the verification of EEDFs in plasmas with silane using optical emission spectroscopy. ECS Transactions, 6 (1). pp. 259-270. ISSN 1938-5862

Agiral, Anil and Groenland, Alforns W. and Kumar Chinthaginjala, J. and Seshan, K. and Lefferts, Leon and Gardeniers, J.G.E. (Han) (2008) On-chip microplasma reactors using carbon nanofibres and tungsten oxide nanowires as electrodes. Journal of Physics D: Applied Physics, 41 (19). p. 194009. ISSN 0022-3727

Puliyankot, Vidhu and Hueting, Raymond J.E. (2012) One-Dimensional Physical Model to Predict the Internal Quantum Efficiency of Si-Based LEDs. IEEE Transactions on Electron Devices, 59 (1). pp. 26-34. ISSN 0018-9383

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Jose, Sumy and Jansman, André B.M. and Hueting, Raymond J.E. and Schmitz, Jurriaan (2010) Optimized reflector stacks for solidly mounted bulk acoustic wave resonators. IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 57 (12). pp. 2753-2763. ISSN 0885-3010

Krabbenborg, Benno and Beltman, R.A.M. and Wolbert, P.B.M. and Mouthaan, A.J. (1992) Physics of electro-thermal effects in ESD protection devices. Journal of Electrostatics, 28 (3). pp. 285-299. ISSN 0304-3886

Hemert, Tom van and Hueting, Raymond J.E. (2013) Piezoelectric strain modulation in FETs. IEEE transactions on electron devices, 60 . pp. 3265-3270. ISSN 0018-9383

Wang, Z. and Ackaert, J. and Salm, C. and Kuper, F.G. and De Backer, E. (2004) Plasma charging damage reduction in IC processing by a self-balancing interconnect. Microelectronics Reliability, 44 (9-11). pp. 1503-1507. ISSN 0026-2714

Wang, Zhichun and Ackaert, Jan and Salm, Cora and Kuper, Fred G. and Tack, Marnix and De Backer, Eddy and Coppens, Peter and De Schepper, Luc and Vlachakis, Basil (2004) Plasma-Charging Damage of Floating MIM Capacitors. IEEE Transactions on Electron Devices, 51 (6). pp. 1017-1024. ISSN 0018-9383

Nijhuis, Christian A. and Maat, Jurjen ter and Bisri, Satria Z. and Weusthof, Marcel H.H. and Salm, Cora and Schmitz, Jurriaan and Ravoo, Bart Jan and Huskens, Jurriaan and Reinhoudt, David N. (2008) Preparation of metal-SAM-dendrimer-SAM-metal junctions by supramolecular metal transfer printing. New Journal of Chemistry, 32 (4). pp. 652-661. ISSN 1144-0546

Nijhuis, Christian A. and Maat, Jurjen ter and Bisri, Satria Z. and Weusthof, Marcel H.H. and Salm, Cora and Schmitz, Jurriaan and Ravoo, Bart Jan and Huskens, Jurriaan and Reinhoudt, David N. (2008) Preparation of metal–SAM–dendrimer–SAM–metal junctions by supramolecular metal transfer printing,. New Journal of Chemistry, 32 . pp. 652-661. ISSN 1144-0546

Haanappel, V.A.C. and Rem, J.B. and Corbach, H.D. van and Fransen, T. and Gellings, P.J. (1995) Properties of alumina films prepared by metal-organic chemical vapour deposition at atmospheric pressure in hte presence of small amounts of water. Surface and Coatings Technology, 72 (1-2). pp. 1-12. ISSN 0257-8972

Chefdeville, M. and Graaf, H. van der and Hartjes, F. and Timmermans, J. and Visschers, J. and Blanco Carballo, V.M. and Salm, C. and Schmitz, J. and Smits, S. and Colas, P. and Giomataris, I. (2008) Pulse height fluctuations of integrated micromegas detectors. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 591 (1). pp. 147-150. ISSN 0168-9002

Melai, Joost and Salm, Cora and Wolters, Rob and Schmitz, Jurriaan (2009) Qualitative and quantitative characterization of outgassing from SU-8. Microelectronic Engineering, 86 (4-6). pp. 761-764. ISSN 0167-9317

Keim, Enrico G. and Aïte, Kamal (1989) Quantitative Auger depth profiling of LPCVD and PECVD silicon nitride films. Fresenius' Zeitschrift für Analytische Chemie, 333 (4-5). pp. 319-321. ISSN 0016-1152

Sasse, Guido T. and Acar, Mustafa and Kuper, Fred G. and Schmitz, J. (2008) RF CMOS reliability simulations. Microelectronics Reliability, 48 (8-9). pp. 1581-1585. ISSN 0026-2714

Steeneken, Peter and Herfst, Rodolf and Suy, Hilco and Goossens, Martijn and Beek, Joost van and Bielen, Jeroen and Stulemeijer, Jiri and Schmitz, Jurriaan (2008) RF MEMS Switches for Mobile Communication. Future Fab International, 24 . pp. 24-30.

Schmitz, J. and Cubaynes, F.N. and Havens, R.J. and Kort, R. de and Scholten, A.J. and Tiemeijer, L.F. (2003) RF capacitance-voltage characterization of MOSFETs with high-leakage dielectric. IEEE Electron Device Letters, 24 (1). pp. 37-39. ISSN 0741-3106

Klootwijk, J.H. and Kranenburg, H. van and Weusthof, M.H.H. and Woerlee, P.H. and Wallinga, H. (1998) RTP annealings for high-quality LPCVD interpolysilicon dielectric layers. Microelectronics Reliability, 38 (2). pp. 277-280. ISSN 0026-2714

Salm, C. and Hof, A.J. and Kuper, F.G. and Schmitz, J. (2006) Reduced temperature dependence of hot carrier degradation in deuterated nMOSFETs. Microelectronics Reliability, 46 (9-11). pp. 1617-1622. ISSN 0026-2714

Salm, Cora and Blanco Carballo, Víctor M. and Melai, Joost and Schmitz, Jurriaan (2008) Reliability aspects of a radiation detector fabricated by post-processing a standard CMOS chip. Microelectronics Reliability, 48 (8-9). pp. 1139-1143. ISSN 0026-2714

Kim, G.M. and Kovalgin, A.Y. and Holleman, J. and Brugger, J. (2002) Replication molds having nanometer-scale shape control fabricated by means of oxidation and etching. Journal of Nanoscience and Nanotechnology, 2 (1). pp. 55-59. ISSN 1533-4880

Li, Yuan and Veenstra, Klaas Jelle and Dubois, Jerome and Peters-Wu, Lei and Zomeren, Agnes van and Kuper, Fred (2003) Reservoir effect and maximum allowed VIA misalignment for AICu interconnect with tungsten VIA plug. Microelectronics Reliability, 43 (9-11). pp. 1449-1454. ISSN 0026-2714

Boselli, Gianluca and Mouthaan, Ton and Kuper, Fred (2000) Rise-time effects in ggnMOSt under TLP stress. Microelectronics Reliability, 40 (12). pp. 2061-2067. ISSN 0026-2714

Sowariraj, M.S.B. and Smedes, Theo and Salm, Cora and Mouthaan, Ton and Kuper, Fred G. (2003) Role of package parasitics and substrate resistance on the Charged Device Model (CDM) failure levels - An explantion and die protection strategy. Microelectronics Reliability, 43 (9-11). pp. 1569-1575. ISSN 0026-2714

Houtsma, V.E. and Holleman, J. and Salm, C. and Woerlee, P.H. (1999) SILC in MOS capacitors with poly-Si and poly-Si0.7Ge0.3 gate material. Microelectronic Engineering, 48 (1-4). pp. 415-418. ISSN 0167-9317

Van Bui, H. and Nguyen, M.D. and Wiggers, F.B. and Aarnink, A.A.I. and Jong, M.P. de and Kovalgin, A.Y. (2014) Self-limiting growth and thickness- and temperature-dependence of optical constants of ALD AlN thin films. ECS journal of solid state science and technology, 3 (4). pp. 101-106. ISSN 2162-8769

Hajlasz, M. and Donkers, J.J.T.M. and Sque, S.J. and Heil, S.B.S. and Gravesteijn, D.J. and Rietveld, F.J.R. and Schmitz, J. (2014) Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures. Applied physics letters, 104 . p. 242109. ISSN 0003-6951

Faber, Erik J. and Smet, Louis C.P.M. de and Olthuis, Wouter and Zuilhof, Han and Sudhölter, Ernst J.R. and Bergveld, Piet and Berg, Albert van den (2005) Si-C Linked Organic Monolayers on Crystalline Silicon Surfaces as Alternative Gate Insulators. ChemPhysChem, 6 (10). pp. 2153-2166. ISSN 1439-4235

Arguirov, T. and Mchedlidze, T. and Kittler, M. and Reiche, M. and Wilhelm, T. and Hoang, T. and Holleman, J. and Schmitz, J. (2009) Silicon based light emitters utilizing radiation from dislocations; electric field induced shift of the dislocation-related luminescence. Physica E: Low-dimensional Systems and Nanostructures, 41 (6). pp. 907-911. ISSN 1386-9477

Le Minh, P. and Holleman, J. (2006) Silicon light-emitting diode antifuse: properties and devices. Journal of physics D: applied physics, 39 . pp. 3749-3754. ISSN 0022-3727

Nguyen, H. and Salm, C. and Wenzel, R. and Mouthaan, A.J. and Kuper, F.G. (2002) Simulation and experimental characterization of reservoir and via layout effects on electromigration lifetime. Microelectronics Reliability, 42 (9-11). pp. 1421-1425. ISSN 0026-2714

Aïte, K. and Hári, P. and Bijker, W. and Middelhoek, J. (1991) Simulation, design and fabrication of large area implanted silicon two-dimensional position sensitive radiation detectors. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 305 (3). pp. 533-540. ISSN 0168-9002

Spruijtenburg, Paul C. and Ridderbos, Joost and Mueller, Filipp and Leenstra, Anne W. and Brauns, M and Aarnink, Antonius A.I. and Wiel, Wilfred G. van der and Zwanenburg, Floris A. (2013) Single-hole tunneling through a two-dimensional hole gas in intrinsic silicon. Applied physics letters, 102 (19). p. 192105. ISSN 0003-6951

Bilevych, Y. and Blanco Carballo, V.M. and Chefdeville, M.A. and Colas, P. and Delagnes, E. and Fransen, M. and Graaff, H. van der and Koppert, W.J.C. and Melai, J. and Salm, C. and Schmitz, J. and Timmermans, J. and Wyrsch, N. (2011) Spark protection layers for CMOS pixel anode chips in MPGDs. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 629 (1). pp. 66-73. ISSN 0168-9002

Roy, Deepu and Zandt, Micha A.A. in 't and Wolters, Rob A.M. (2010) Specific contact resistance of phase change materials to metal electrode. IEEE Electron Device Letters, 31 (11). pp. 1293-1295. ISSN 0741-3106

Tiggelaar, R.M. and Sanders, R.G.P. and Groenland, A.W. and Gardeniers, J.G.E. (2009) Stability of thin platinum films implemented in high-temperature microdevices. Sensors and Actuators A: Physical, 152 (1). pp. 39-47. ISSN 0924-4247

Hemert, T. van and Kaleli, B. and Hueting, R.J.E. and Esseni, D. and Dal, M.J.H. van and Schmitz, J. (2013) Strain and conduction-band offset in narrow n-type finFETs. IEEE transactions on electron devices, 60 (3). pp. 1005-1010. ISSN 0018-9383

Kaleli, B. and Hemert, T. van and Hueting, R.J.E. and Wolters, R.A.M. (2013) Strain characterization of FinFETs using Raman spectroscopy. Thin solid films, 541 . pp. 57-61. ISSN 0040-6090

Houtsma, V.E. and Holleman, J. and Salm, C. and Widdershoven, F.P. and Woerlee, P.H. (1999) Stress-Induced Leakage Current in p+ Poly MOS Capacitors with Poly-Si and Poly-Si0.7Ge0.3 Gate Material. IEEE Electron Device Letters, 1999 (20). pp. 314-316. ISSN 0741-3106

Hoang, T. and Le Minh, P. and Holleman, J. and Schmitz, J. (2007) Strong efficiency improvement of SOI-LEDs through carrier confinement. IEEE electron device letters, 28 (5). pp. 383-385. ISSN 0741-3106

Wijburg, Rutger C. and Hemink, Gertjan J. and Middelhoek, Jan (1990) Strongly asymmetric doping profiles at mask edges in high energy ion implantation. IEEE Transactions on Electron Devices, 37 (1). pp. 79-87. ISSN 0018-9383

Galca, Aurelian C. and Kooij, E. Stefan and Wormeester, Herbert and Salm, Cora and Leca, Victor and Rector, Jan H. and Poelsema, Bene (2003) Structural and optical characterization of porous anodic aluminium oxide. Journal of Applied Physics, 94 (7). pp. 4296-4305. ISSN 0021-8979

Kuper, Fred and Luchies, Jan Marc and Bruines, Joop (1994) Suppression and origin of soft ESD failures in a submicron CMOS process. Journal of Electrostatics, 33 (3). pp. 313-325. ISSN 0304-3886

Melai, J. and Blanco Carballo, V.M. and Salm, C. and Schmitz, J. (2010) Suspended membranes, cantilevers and beams using SU-8 foils. Microelectronic Engineering, 87 (5-8). pp. 1274-1277. ISSN 0167-9317

Stavitski, N. and Dal, M.J.H. van and Lauwers, A. and Vrancken, C. and Kovalgin, A.Y. and Wolters, R.A.M. (2008) Systematic TLM Measurements of NiSi and PtSi Specific Contact Resistance to n- and p-Type Si in a Broad Doping Range. IEEE electron device letters, 29 (4). pp. 378-381. ISSN 0741-3106

Schmitz, Jurriaan and Cubaynes, Florence N. and Havens, Ramon J. and Kort, Randy de and Scholten, Adries J. and Tiemeijer, Luuk F. (2004) Test structures design considerations for RF-CV measurements on leaky dielectrics. IEEE Transactions on Semiconductor Manufacturing, 17 (2). pp. 150-154. ISSN 0894-6507

Hof, A.J. and Hoekstra, E. and Kovalgin, A.Y. and Schaijk, R. van and Baks, W.M. and Schmitz, J. (2005) The Impact of Deuterated CMOS processing on Gate Oxide Reliability. IEEE Transactions on Electron Devices, 52 (9). pp. 2111-2115. ISSN 0018-9383

Hurley, Paul K. and Negara, Adi and Hemert, Tom van and Cherkaoui, Karim (2009) The Influence of Oxide Charge on Carrier Mobility in HfO2/TiN Gate Silicon MOSFETs. ECS Transactions, 19 (2). pp. 379-391. ISSN 1938-5862

Schmitz, J. and Cubaynes, F.N and Kort, R. de and Havens, R.J. and Scholten, A.J. and Tiemeijer, L.F. (2004) The RF-CV method for characterization of leaky gate dielectrics. Microelectronic Engineering, 72 . pp. 149-153. ISSN 0167-9317

Hueting, R.J.E. and Rajasekharan, B. and Salm, C. and Schmitz, J. (2008) The charge plasma P-N diode. IEEE electron device letters, 29 (12). pp. 1367-1369. ISSN 0741-3106

Campbell, M. and Chefdeville, M. and Colas, P. and Colijn, A.P. and Forniani, A. and Giomataris, Y. and Graaf, H. van der and Heijne, E.H.M. and Kluit, P. and Llopart, X. and Schmitz, J. and Timmermans, J. and Visschers, J.K. (2005) The detection of single electrons by means of a Micromegas-covered Medipix2 pixel CMOS readout circuit. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 540 (2-3). pp. 295-304. ISSN 0168-9002

Forniani, A. and Campbell, M. and Chefdeville, M.A. and Colas, P. and Colijn, A.P. and van der Graaf, H. and Giomataris, Y. and Heijne, E.H.M. and Kluit, P. and Llopart, X. and Schmitz, J. and Timmermans, J. and Visschers, J.L. (2005) The detection of single electrons using a Microgas gas amplification and a MediPix2 CMOS pixel readout. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 546 (1-2). pp. 270-273. ISSN 0168-9002

Vereshchagina, E. and Wolters, R.A.M. and Gardeniers, J.G.E. (2011) The development of titanium silicide–boron-doped polysilicon resistive temperature sensors. Journal of Micromechanics and Microengineering, 21 (10). p. 105022. ISSN 0960-1317

Hoang, T. and LeMinh, P. and Hollleman, J. and Schmitz, J. (2006) The effect of dislocation loops on the light emission of silicon LEDs. IEEE Electron Device Letters, 27 (2). pp. 105-107. ISSN 0741-3106

Melai, Joost and Salm, Cora and Smits, Sander and Visschers, Jan and Schmitz, Jurriaan (2009) The electrical conduction and dielectric strength of SU-8. Journal of Micromechanics and Microengineering, 19 (6). 065012. ISSN 0960-1317

Graaf, H. van der and Aarnink, A.A.I. and Aarts, A. and Bakel, N. van and Berbee, E. and Berkien, A. and Beuzekom, M. van and Bosma, M. and Campbell, M. and Chefdeville, M.A. and Colas, P. and Colijn, A.-P. and Fomaini, A. and Fransen, M. and Giganon, A. and Giomataris, I. and Gotink, W. and Groot, N. de and Hartjes, F. and van der Heijden, B. and Hessey, N. and Jansweijer, P. and Konig, A. and Koppert, W. and Llopart, X. and Nooij, L. de and Putten, S. van der and Rövekamp, J. and Salm, C. and San Segundo Bello, D. and Schmitz, J. and Smits, S.M. and Timmermans, J. and Verkooijen, H. and Visschers, J. and Visser, J. and Wijnen, T. and Wyrsch, N. (2013) The gridpix detector: history and perspective. Modern Physics Letters A, 28 (28-13). pp. 13400211-13400217. ISSN 0217-7323

Sowariraj, M.S.B. and Salm, C. and Mouthaan, A.J. and Smedes, T. and Kuper, F.G. (2002) The influence of technology variation on ggNMOSTs and SCRs against CDM ESD stress. Microelectronics Reliability, 42 (9-11). pp. 1287-1292. ISSN 0026-2714

Mouthaan, Ton J. and Petrescu, Violeta (1998) The modeling of resistance changes in the early phase of electromigration. Microelectronics Reliability, 38 (1). pp. 99-105. ISSN 0026-2714

Colas, P. and Colijn, A.P. and Forniani, A. and Giomataris, Y. and Graaf, H. van der and Heijne, E.H.M. and Llopart, X. and Schmitz, J. and Timmermans, J. and Visschers, J.L. (2004) The readout of a GEM or Micromegas-equipped TPC by means of the Medipix2 CMOS sensor as direct anaode. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 535 (1-2). pp. 506-510. ISSN 0168-9002

Kort, Kees de and Luchies, Jan Marc and Vrehen, J.J. (1994) The transient behaviour of an input protection. Microelectronic Engineering, 24 (1-4). pp. 355-362. ISSN 0167-9317

Liefting, J.R. and Custer, J.S. and Saris, F.W. (1994) Time evolution of dislocation formation in ion implanted silicon. Materials Science and Engineering B: Solid-state materials for advanced technology, 25 (1). pp. 60-67. ISSN 0921-5107

Kleijn, C.R. and Hoogendoorn, C.J. and Hasper, A. and Holleman, J. and Middelhoek, J. (1991) Transport Phenomena in Tungsten LPCVD in a Single-Wafer Reactor. Journal of the Electrochemical Society, 138 (2). pp. 509-517. ISSN 0013-4651

Meneghesso, G. and Luchies, J.R.M. and Kuper, F.G. and Mouthaan, A.J. (1996) Turn-on speed of grounded gate NMOS ESD protection transistors. Microelectronics Reliability, 36 (11/12). pp. 1735-1738. ISSN 0026-2714

Bilevych, Y. and Blanco Carballo, V.M. and Chefdeville, M.A. and Fransen, M. and Graaf, H. van der and Salm, C. and Schmitz, J. and Timmermans, J. (2009) Twingrid: a wafer post-processed multistage micro patterned gaseous detector. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 610 (3). pp. 644-648. ISSN 0168-9002

Schie, Eddie van and Middelhoek, Jan (1989) Two methods to improve the performance of Monte Carlo simulations of ion implantation in amorphous targets. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 8 (2). pp. 108-113. ISSN 0278-0070

Van Bui, H. and Aarnink, A.A.I. and Kovalgin, A.Y. and Wolters, R.A.M. (2011) Ultra-Thin Atomic Layer Deposited TiN Films: Non-Linear I–V Behaviour and the Importance of Surface Passivation. Journal of Nanoscience and Nanotechnology, 11 (9). pp. 8120-8125. ISSN 1533-4880

Wijburg, Rutger C. and Hemink, Gertjan J. and Middelhoek, Jan and Wallinga, Hans and Mouthaan, Ton J. (1991) VIPMOS-A novel buried injector structure for EPROM applications. IEEE Transactions on Electron Devices, 38 (1). pp. 111-120. ISSN 0018-9383

Verweij, Jan F. (1993) VLSI Reliability in Europe. Proceedings of the IEEE, 81 (5). pp. 675-681. ISSN 0018-9219

Steen, J.-L.P.J. van der and Hueting, R.J.E. and Smit, G.D.J. and Hoang, T. and Holleman, J. and Schmitz, J. (2007) Valence Band Offset Measurements on Thin Silicon-on-Insulator MOSFETs. IEEE Electron Device Letters, 28 (9). pp. 821-824. ISSN 0741-3106

Steen, Jan-Laurens P.J. van der and Esseni, David and Palestri, Pierpalo and Selmi, Luca and Hueting, Raymond J.E. (2007) Validity of the parabolic effective mass approximation in silicon and germanium n-MOSFETs with different crystal orientations. IEEE Transactions on Electron Devices, 54 (8). pp. 1843-1851. ISSN 0018-9383

Kranenburg, Herma van and Corbach, Herman D. van and Woerlee, Pierre H. and Lohmeier, Martin (1997) W-CMP for sub-micron inverse metallisation. Microelectronic Engineering, 33 (1-4). pp. 239-246. ISSN 0167-9317

Faber, Erik J. and Sparreboom, Wouter and Groeneveld, Wilrike and Smet, Louis C.P.M. de and Bomer, Johan and Olthuis, Wouter and Zuilhof, Han and Sudhölter, Ernst J.R. and Bergveld, Piet and Berg, Albert van den (2007) pH sensitivity of Si-C linked organic monolayers on crystalline silicon surfaces. ChemPhysChem, 8 (1). pp. 101-112. ISSN 1439-4235

Book Section

Wolters, D.R. and Verweij, J.F. and Zegers-van Duijnhoven, A.T.A. (1999) Dielectric breakdown in SiO2: A survey of test methods. In: New Insulators, Devices and Radiation Effects. Instabilities in Silicon Devices, 3 . Elsevier, pp. 233-263. ISBN 9780444818010

Degraeve, R. and Schmitz, J. and Pantisano, L. and Simoen, E. and Houssa, M. and Kaczer, B. and Groeseneken, G. (2007) Electrical characterization of advanced gate dielectrics. In: Dielectric Films for Advanced Microelectronics. Wiley series in materials for electronic & optoelectronic applications . John Wiley & Sons Ltd., England, pp. 371-435. ISBN 9780470013601

Schmitz, Jurriaan (2013) Microchip post-processing: There is plenty of room at the top. In: Future trends in microelectronics: frontiers and innovation. Future trends in microelectronics, 7 . John Wiley & Sons, Inc., Hoboken, NJ, pp. 110-119. ISBN 9781118442166

Knotter, D. Martin and Wali, Faisal (2009) Particles in Semiconductor Processing. In: Developments in Surface Contamination and Cleaning - Methods for Removal of Particle Contaminants. Elsevier, Amsterdam, pp. 81-120. ISBN 9781437778304

Hoang, T. and Holleman, J. and Schmitz, J. (2008) SOI LEDs with carrier confinement. In: Materials Science Forum. Trans Tech Publications, Switzerland, Stafa- Zurich, Switzerland, pp. 101-116. ISBN 9780878493586

Conference or Workshop Item

Kolhatkar, J.S. and Salm, C. and Wallinga, H. (2001) 1/f noise and switched bias noise measurement in p-MOSFET with varying gate oxide thickness. In: Proceedings of the 4th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2001, 28-30 Nov 2001, Veldhoven, The Netherlands (pp. pp. 92-95).

Petrescu, V. and Mouthaan, A.J. (1997) 2D Modelling of Mechanical Stress Evolution and Electromigration in Confined Aluminium Interconnects. In: 21st International Conference on Microelectronics, MIEL 1997, NIS, Yugoslavia, 14-17 September 1997, Nis, Serbia (pp. pp. 629-632).

Masa, P. and Hoen, K. and Wallinga, H. (1994) 70 input, 20 nanosecond pattern classifier. In: IEEE International Conference on Neural Networks, 1994, 27 June - 2 July 1994, Orlando, FL, USA (pp. pp. 1854-1859).

Hoang, T. and LeMinh, P. and Holleman, J. and Zieren, V. and Goossens, M.J. and Schmitz, J. (2004) A High Efficiency Lateral Light Emitting Device on SOI. In: 12th International Symposium on Electron Devices for Microwave and Optoelectronic Applications, EDMO, 8-9 November 2004, Berg-en-Dal, Kruger National Park, South Africa (pp. pp. 87-91).

Kovalgin, A.Y. and Holleman, J. and Iordache, G. (2005) A Versatile Micro-Scale Silicon Sensor/Actuator with Low Power Consumption. In: IEEE Sensors, 2005, 30 Oct .- 3 Nov. 2005 , Irvine, CA, USA (pp. pp. 1225-1228).

Mouthaan, Ton (2004) A case study of a microsystems MSc curriculum. In: Second IEEE International Workshop on Electronic Design, Test and Applications, DELTA 2004, 28-30 Jan. 2004, Perth, Australia (pp. pp. 146-148).

Jose, S. and Jansman, A.B.M. and Hueting, R.J.E. (2010) A design procedure for an acoustic mirror providing dual reflection of longitudinal and shear waves in Solidly Mounted BAW Resonators (SMRs). In: IEEE International Ultrasonics Symposium, IUS, 20-23 September 2009, Rome, Italy (pp. pp. 2111-2114).

Aarnink, A.A.I. and Boogaard, A. and Brunets, I. and Isai, I.G. and Kovalgin, A.Y. and Holleman, J. and Wolters, R.A.M. and Schmitz, J. (2005) A high-density inductively-coupled remote plasma system for the deposition of dielectrics and semiconductors. In: 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005 (SAFE 2005), 17-18 November 2005, Veldhoven, the Netherlands (pp. pp. 67-69).

Kovalgin, A.Y. and Holleman, J. and Iordache, G. (2004) A micro-scale hot-surface device based on non-radiative carrier recombination. In: 34th European Solid-State Device Research Conference, ESSDERC, 21-23 September 2004, Leuven, Belgium (pp. pp. 353-356).

Blanco Carballo, V.M. and Chefdeville, M. and Graaf, H. van der and Salm, C. and Aarnink, A.A.I. and Smits, S.M. and Altpeter, D.M. and Timmermans, J. and Visschers, J.L. and Schmitz, J. (2006) A miniaturized multiwire proportional chamber using CMOS wafer scale post-processing. In: 32nd European Solid State Device Research Conference, 02-06 July 2006, Montreux, Switzerland (pp. pp. 129-132).

Steen, J.-L.P.J. van der and Palestri, P. and Esseni, D. and Hueting, R.J.E. (2010) A new model for the backscatter coefficient in nanoscale MOSFETs. In: 40th European Solid-State Device Research, Essderc 2010, 13-17 Sep 2010, Sevilla, Spain (pp. pp. 234-237).

Kovalgin, A.Y. and Holleman, J. and Berg, A. van den (2002) A novel approach to low-power hot-surface devices with decoupled electrical and thermal resistances. In: Eurosensors XVI, European Conference on Solid-State Transducers, September 15-18, 2002, Prague, Czech Republic (pp. pp. 88-91).

Nguyen, H.V. and Salm, C. and Krabbenborg, B.H. and Bisschop, J. and Mouthaan, A.J. and Kuper, F.G. (2003) A reliability model for interlayer dielectrics cracking during very fast thermal cycling. In: Advanced Metallization Conference 2003, September 29 - October 1, 2003 (Tokyo) and 21-23 October 2003 (Montreal), Tokyo, Japan and Montreal, Canada (pp. pp. 295-299).

Walters, Robert J. and Loon, Rob V.A. van and Brunets, Ihor and Schmitz, Jurriaan and Polman, Albert (2009) A silicon-based electrical source for surface plasmon polaritons. In: 6th International Conference on GroupIV Photonics GFP'09, 9-11 Sept 2009, San Francisco, USA (pp. pp. 74-76).

Stavitski, N. and Klootwijk, J.H. and Zeijl, H.W. van and Kovalgin, A.Y. and Wolters, R.A.M. (2008) A study of cross-bridge kelvin resistor structures for reliable measurement of low contact resistances. In: Proceedings of the 21st ICMTS 2008 IEEE Conference on Microelectronic Test Structures, 24-28 Mar 2008, Edinburgh, Schotland (pp. pp. 199-204).

Brunets, I. and Groenland, A.W. and Boogaard, A. and Aarnink, A.A.I. and Kovalgin, A.Y. (2008) A study of thermal oxidation and plasma-enhanced oxidation/reduction of ALD TiN layers. In: 18th International Conference on Atomical Layer Deposition, ALD 2008, 29 June - 2 July 2008, Bruges, Belgium (pp. P-54).

Lu, J. and Liu, W. and Werf, C.H.M. van der and Kovalgin, A.Y. and Sun, Y. and Schropp, R.E.I. and Schmitz, J. (2010) Above-CMOS a-Si and CIGS Solar Cells for Powering Autonomous Microsystems. In: IEEE International Electron Devices Meeting, IEDM 2010, 6-8 December 2010, San Francisco, CA, USA (pp. 31.3.1.-31.3.4).

Jose, S. and Hueting, R.J.E. and Jansman, A.B.M. (2010) Acoustic dispersion of solidly mounted resonators with an optimized reflector stack for dual wave reflection. In: IEEE International Ultrasonics Symposium, IUS 2010, 11-14 Oct 2010, San Diego, CA (pp. pp. 91-94).

Hemert, Tom van and Hueting, R.J.E. (2012) Active strain modulation in field effect devices. In: European Solid-State Device Research Conference, ESSDERC 2012, 17-21 September 2012, Bordeaux, France (pp. pp. 125-128).

Salm, Cora and Eijkel, Jan and Heijden, Ferdi van der and Odijk, Mathieu (2010) Adapting to a changing highschool population. In: 8th European Workshop on Microelectronics Education, EWME 2010, 10-12 May 2010, Darmstadt, Germany (pp. pp. 180-184).

Boksteen, B.K. and Hueting, R.J.E. and Salm, C. and Schmitz, J. (2010) An Initial study on The Reliability of Power Semiconductor Devices. In: STW.ICT Conference 2010, 18-19 Nov 2010, Veldhoven, The Netherlands (pp. pp. 68-72).

Chefdeville, M. and Colas, P. and Giomataris, Y. and Graaf, H. van der and Heijne, E.H.M. and Putten, S. van der and Salm, C. and Schmitz, J. and Smits, S. and Timmermans, J. and Visschers, J.L. (2005) An electron-multiplying 'Micromegas' grid made in silicon wafer post-processing technology. In: SAFE 2005, 8th Annual Workshop on Circuits, Systems and Signal Processing, 17-18 Nov. 2005, Veldhoven, the Netherlands (pp. pp. 139-142).

Heuvel, M.G.L. van den and Hueting, R.J.E. and Hijzen, E.A. and Zandt, M.A.A. in 't (2003) An improved method for determining the inversion layer mobility of electrons in trench MOSFETs. In: IEEE 15th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2003, April 14-17 2003, Cambridge, UK (pp. pp. 173-176).

Puliyankot, V. and Hueting, R.J.E. and Schmitz, J. (2009) An initial modelling and simulation study on the 1D Si-Based LED. In: 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE, 26-27 November 2009, Veldhoven, The Netherlands (pp. pp. 170-173).

Blanco Carballo, V.M. and Salm, C. and Smits, S.M. and Schmitz, J. and Chefdeville, M. and Graaf, H. van der and Timmermans, J. and Visschers, J.L. (2006) An integrated gaseous detector using microfabrication post-processing technology. In: 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, 23-24 Nov. 2006, Veldhoven, The Netherlands (pp. pp. 369-372).

Campbell, M. and Heijne, E.H.M. and Llopart, X. and Chefdeville, M.A. and Colas, P. and Giomataris, Y. and Colijn, A.P. and Fornaini, A. and Graaf, H. van der and Kluit, P. and Timmermans, J. and Visschers, J.L. and Schmitz, J. (2006) An integrated readout system for drift chambers: the application of monolithic CMOS pixel sensors as segmented direct anode. In: 9th Topical Seminar on Innovative Particle and Radiation Detectors, 23-26 May 2004, Siena, Italy (pp. pp. 200-203).

Melai, J. and Salm, C. and Schmitz, J. and Smits, S.M. and Visschers, J.L. (2006) An integrated single photon detector array using porous anodic alumina. In: Proceedings of 8th IWORID (International Workshop on Radiation Imaging Detectors), 2 - 6 July 2006, Pisa, Italy (pp. p. 1).

Melai, J. and Salm, C. and Schmitz, J. and Smits, S.M. and Visschers, J.L. (2006) An integrated single photon detector array using porous anodic alumina. In: Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006, 23-24 Nov 2006, Veldhoven, The Netherlands (pp. pp. 389-393).

Kolhatkar, J.S. and Salm, C. and Wallinga, H. (2002) Analysis of 'Switched Biased' random telegraph signals in MOSFETs. In: Proceedings of the 5th annual workshop on Semiconductors Advances for Future Electronics SAFE 2002, 27-28 November 2002, Veldhoven, The Netherlands (pp. pp. 42-45).

Piccolo, G. and Hoang, T. and Holleman, J. and Kovalgin, A.Y. and Schmitz, J. (2008) Antifuse injectors for SOI LEDs. In: Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008), 27-28 Nov 2008, Veldhoven, The Netherlands (pp. pp. 573-575).

Iordache, G. and Holleman, J. and Kovalgin, A.Y. and Jenneboer, A.J.S.M. (2003) Antifuse nano-hot-spot device on a suspended membrane for gas sensing applications. In: Proceedings of the 6th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2003, 25 - 26 November 2003, Veldhoven, The Netherlands (pp. pp. 693-696).

Klee, M. and Beelen, D. and Keurl, W. and Kiewitt, R. and Kumar, B. and Mauczok, R. and Reimann, K. and Renders, Ch. and Roest, A. and Roozeboom, F. and Steeneken, P.G. and Tiggelman, M.P.J. and Vanhelmont, F. and Wunnicke, O. and Lok, P. and Neumann, K. and Fraser, J. and Schmitz, G. (2007) Application of Dielectric, Ferroelectric and Piezoelectric Thin Film Devices in Mobile Communication and Medical Systems. In: 15th IEEE International Symposium on the Applications of Ferroelectrics, ISAF 2006, 30 July - 3 August 2006, Sunset Beach, NC, USA (pp. pp. 9-16).

Bystrova, S. and Holleman, J. and Wolters, R.A.M. and Aarnink, A.A.I. (2003) Atomic layer deposition of W - based layers on SiO2. In: 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003, 25-26 November 2003, Veldhoven, The Netherlands (pp. pp. 730-734).

Steen, J.-L.P.J. van der and Hueting, R.J.E. and Smit, G.D.J. and Hoang, T. and Holleman, J. and Schmitz, J. (2007) Band Offset Measurements on Ultra-Thin (100) SOI MOSFETs. In: 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE), 29-30 Nov 2007, Veldhoven, The Netherlands (pp. pp. 460-464).

Bystrova, S. and Holleman, J. and Aarnink, A.A.I. and Wolters, R.A.M. (2005) Barrier properties of ALD1,5N thin films. In: International Conference on Advanced Metallization, 19-21 October 2004, San Diego, California, USA (pp. pp. 769-774).

Roy, Deepu and Zandt, Micha in 't and Wolters, Rob (2010) Bias dependent specic contact resistance of phase change material to metal contacts. In: STW.ICT Conference 2010, 18-19 November 2010, Veldhoven, The Netherlands (pp. pp. 147-149).

Bearda, Twan and Mertens, Paul W. and Heyns, Marc M. and Woerlee, Pierre and Wallinga, Hans (2000) Breakdown and recovery of thin gate oxides. In: 30th European Solid-State Device research Conference, 11-13 September 2000, Cork, Ireland (pp. pp. 116-119).

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Wang, J and Salm, Cora and Schmitz, Jurriaan (2013) Comparison of C-V measurement methods for RF-MEMS capacitive switches. In: IEEE International Conference on Microelectronic Test Structures, ICMTS 2013, 25-28 March, 2013, San Diego, CA, USA (pp. pp. 53-58).

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Piccolo, G. and Sarubbi, F. and Vandamme, L.J.K. and Macucci, M. and Scholtes, T.L.M. and Nanver, L.K. (2007) Low-Frequency Noise Characterization of Ultra-shallow Gate N-channel Junction Field Effect Transistors. In: 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE), 29-30 Nov 2007, Veldhoven, The Netherlands (pp. pp. 448-451).

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Lu, J. and Liu, W. and Kovalgin, A.Y. and Sun, Y. and Schmitz, J. (2011) Materials Characterization of CIGS solar cells on Top of CMOS chips. In: MRS Spring Meeting - Symposium E – Energy Harvesting, 25-29 April 2011, San Francisco, CA, USA (pp. e06-23).

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Blanco Carballo, V.M. and Salm, C. and Smits, S.M. and Schmitz, J. and Melai, J. and Chefdeville, M. and Graaf, H. van der (2007) Technological aspects of gaseous pixel detectors fabrication. In: 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE), 29-30 Nov. 2007, Veldhoven, The Netherlands (pp. pp. 501-503).

Wang, Zhichun and Scarpa, Andrea and Smits, Sander and Salm, Cora and Kuper, Fred (2002) Temperature Effect on Antenna Protection Strategy for Plasma-Process Induced Charging Damage. In: 7th International Symposium of Plasma Process-Induced Damage, June 6-7, 2002, Maui, Hawaii, USA (pp. pp. 134-137).

Salm, Cora and Houtsma, Vincent and Kuper, Fred and Woerlee, Pierre (2001) Temperature acceleration of thin gate-oxide degradation. In: 4th annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001, 28-30 Nov 2001, Veldhoven, The Netherlands (pp. pp. 174-177).

Wang, Z. and Scarpa, A. and Smits, S.M. and Kuper, F.G. and Salm, C. (2002) Temperature effect on protection diode for plasma-process induced charging damage. In: Proceedings of the 5th annual workshop on Semiconductors Advances for Future Electronics SAFE 2002, 27-28 November 2002, Veldhoven, The Netherlands (pp. pp. 127-130).

Nguyen, H.V. and Salm, C. and Vroemen, J. and Voets, J. and Krabbenborg, B. and Bisschop, J. and Mouthaan, A.J. and Kuper, F.G. (2002) Test chip for Detecting Thin Film Cracking Induced by Fast Temperature Cycling and Electromigration in Multilevel Interconnect Systems. In: 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 8-12 July 2002 , Singapore, Thailand (pp. pp. 135-139).

Nguyen, H. and Salm, C. and Vroemen, J. and Voets, J. and Krabbenborg, B.H. and Bisschop, J. and Mouthaan, A.J. and Kuper, F.G. (2002) Test chip for detecting thin film cracking induced by fast temperature cycling and electromigration in multilevel interconnect systems. In: 9th International Symposium on Physics and Failure Analysis 2002, 8-12 Jul 2002, Singapore, Thailand (pp. pp. 135-139).

Schmitz, J. and Cubaynes, F.N. and Havens, R.J. and Kort, R. de and Scholten, A.J. and Tiemeijer, L.F. (2003) Test structure design considerations for RF-CV measurements on leaky dielectrics. In: International Conference on Microelectronic Test Structures, 2003, 17-20 March 2003, Monterey, California, USA (pp. 181- 185).

Lee, Kyong-Taek and Schmitz, Jurriaan and Brown, George A. and Heh, Dawei and Choi, Rino and Harris, Rusty and Song, Seung-Chul and Lee, Byoung Hun and Han, In-Sikh and Lee, Hi-Deok and Jeong, Yoon-Ha (2007) Test structures for accurate UHF C-V measurements of nano-scale CMOSFETs with HfSiON and TiN metal gate. In: IEEE International Conference on Microelectronic Test Structures, ICMTS 2007, 19-22 March 2007, Tokyo, Japan (pp. pp. 124-127).

Sasse, Guido T. and Vries, Henk and Schmitz, Jurriaan (2005) The RF charge pump technique for measuring the interface state density on leaky dielectrics. In: 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE, 17-18 November 2005, Veldhoven, The Netherlands (pp. pp. 47-51).

Schmitz, J. and Cubaynes, F.N. and Kort, R. de and Havens, R.J. and Scholten, A.J. and Tiemeijer, L.F. (2004) The RF-CV method for characterization of leaky gate dielectrics. In: 13th Biannual Conference on Insulating Films on Semiconductors, 18 June 2003, Barcelona, Spain.

Le Minh, P. and Hoang, T. and Holleman, J. and Schmitz, J. (2005) The effect of an electric field on a lateral silicon light-emitting diode. In: 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005 (SAFE 2005), 17-18 November 2005, Veldhoven, The Netherlands (pp. pp. 117-120).

Hoang, T. and LeMinh, P. and Holleman, J. and Schmitz, J. (2005) The effect of dislocation loops on the light emission of silicon LEDs. In: 35th European Solid-State Device Research Conference, ESSDERC, 12-16 Sept. 2005 , Grenoble, France (pp. pp. 359-362).

Hoang, T. and Le Minh, P. and Holleman, J. and Schmitz, J. (2005) The effect of dislocation loops on the light emission of silicon LEDs. In: Proceedings of 5th European Solid-State Device Research Conference (ESSDERC) 2005, 12-16 Sep 2005, Grenoble, France (pp. pp. 359-362).

Bilevych, Y. and Blanco Carballo, V.M. and Breur, S. and Fransen, M. and Graaf, H. van der and Hartjes, F. and Hessey, N. and Kalter, R. and Ketel, T. and Koppert, W.C. and Rogers, M. and Schmitz, J. and Timmermans, J. and Visschers, J. (2009) The performance of GridPix detectors. In: IEEE Nuclear Science Symposium Conference Record 2009, 24 October - 1 November 2009, Orlando, FL, USA (pp. pp. 231-236).

Kuindersma, P. and Hoang, T. and Schmitz, J. and Vijayaraghavan, M.N. and Dijkstra, M. and Noort, W.A. van and Vanhoucke, T. and Peters, W.C.M. and Kramer, M.C.J.C.M. (2008) The power conversion efficiency of visible light emitting devices in standard BiCMOS processes. In: 5th IEEE International Conference on Group IV Photonics, 2008, 17-19 Sept 2008, Sorrento, Italy (pp. pp. 256-258).

Ferrara, A. and Steeneken, P.G. and Heringa, A. and Boksteen, B.K. and Swanenberg, M. and Scholten, A.J. and Dijk, L. van and Schmitz, J. and Hueting, R.J.E. (2013) The safe operating volume as a general measure for the operating limits of LDMOS transistors. In: International Electron Devices Meeting, IEDM 2013, 9-11 December 2013, Washington, DC, USA (pp. 6.7.1-6.7.4).

Tiggelman, M.P.J. and Reimann, K. and Liu, J. and Klee, M. and Mauczok, R. and Keur, W. and Schmitz, J. and Hueting, R.J.E. (2008) The trade-off between tuning ratio and quality factor of BaxSr1-xTiO3 MIM capacitors on alumina substrates. In: 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008, 27-28 November 2008, Veldhoven, The Netherlands (pp. pp. 506-508).

Groenland, A.W. and Brunets, I. and Boogaard, A. and Aarnink, A.A.I. and Kovalgin, A.Y. and Schmitz, J. (2008) Thermal and plasma-enhanced oxidation of ALD TiN. In: 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008, 27-28 November 2008, Veldhoven, The Netherlands (pp. pp. 468-471).

Van Bui, Hao and Aarnink, A.A.I. and Kovalgin, A.Y. and Wolters, R.A.M. and Schmitz, J. (2009) Thermal atomic layer deposition and oxidation of TiN monitored by in-situ spectroscopic ellipsometry. In: 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE, 26-27 November 2009, Veldhoven, The Netherlands (pp. pp. 59-62).

Kovalgin, A.Y. and Holleman, J. and Berg, A. van den and Wallinga, H. (2001) Thin-film Antifuses for Pellistor Type Gas Sensors. In: Semiconductor Sensor and Actuator Technology, SeSens, November 30, 2001, Veldhoven, The Netherlands (pp. pp. 809-812).

Brunets, I. and Boogaard, A. and Isai, I.G. and Aarnink, A.A.I. and Kovalgin, A.Y. and Holleman, J. and Schmitz, J. (2005) Three-dimensional IC's prolong the life of Moore's law. In: 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005 (SAFE 2005), 17-18 November 2005, Veldhoven, the Netherlands (pp. pp. 76-78).

Van Bui, Hao and Wolters, Rob A.M. and Kovalgin, Alexey Y. (2012) TiN films by Atomic Layer Deposition: Growth and electrical characterization down to sub-nm thickness. In: Proceedings of the International Conference on Anvanced Materials and Nanotechnology (ICAMN 2012), 13-14 Dec 2012, Hanoi, Vietnam (pp. pp. 7-12).

Nguyen Hoang, V. and Timmer, B. and Kranenburg, H. van and Woerlee, P.H. (1999) Time Dependency of the Planarization Process in Copper Chemical Mechanical Polishing. In: 29th European Solid-State Device Research Conference, ESSDERC, September 13-15, 1999, Leuven, Belgium (pp. pp. 260-263).

Herfst, R.W. and Steeneken, P.G. and Schmitz, J. (2007) Time and voltage dependence of dielectric charging in RF MEMS capacitive switches. In: 45th Annual IEEE International Reliability Physics Symposium, IRPS 2007, 15-19 April 2007, Phoenix, Arizona (pp. pp. 417-421).

Tosic, N. and Kuper, F.G. and Mouthaan, A.J. (2000) Transmission Line Model Testing of Top-Gate Amorphous Silicon Thin Film Transistors. In: 38th Annual IEEE International Reliability Physics Symposium, 10-13 April 2000, San Jose, CA (pp. pp. 289-294).

Meneghesso, G. and Luchies, J.R.M. and Kuper, F.G. and Mouthaan, A.J. (1996) Turn-on speed of grounded gate NMOS ESD protection transistors. In: 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 8-11 October 1996, Enschede, The Netherlands (pp. pp. 1735-1738).

Steen, J.L. van der and Esseni, D. and Palestri, P. and Selmi, L. (2006) Validity of the Effective Mass Approximation in Silicon and Germanium Inversion Layers. In: 11th International Workshop on Computational Electronics, IWCE, 25-27 May 2006, Vienna, Austria (pp. pp. 301-302).

Scarpa, Andrea and Tao, Guoqiao and Kuper, Fred G. (2000) Wafer level reliability monitoring strategy of an advanced multi-process CMOS foundry. In: 41st Annual IEEE International International Reliability Physics Symposium, IRPS 2003, 30 March - 4 April 2003, Dallas, TX, USA (pp. 602- 603).

Patent

Hasper, Albert and Snijders, Gert-Jan and Vandezande, Lieve and De Blank, Marinus J. and Bankras, Radko G. (2006) Deposition of TiN films in a batch reactor. Patent.

Hasper, Albert and Snijders, Gert-Jan and Vandezande, Lieve and De Blank, Marinus J. and Bankras, Radko Gerard (2010) Deposition of TiN films in a batch reactor. Patent.

Tiggelman, Markus Petrus Josephus and Reimann, Klaus (2009) Reconfigurable radio-frequency front-end. Patent.

Kovalgin, Alexey Y. and Aarnink, Antonius A.I. (2013) Semiconductor processing apparatus with compact free radical source. Patent.

Furukawa, Yukiko and Reimann, Klaus and Jedema, Friso Jacobus and Tiggelman, Markus Petrus Josephus and Roest, Aarnoud Laurens (2009) Tunable capacitor. Patent.

Thesis

Van Bui, Hao (2013) Atomic layer deposition of TiN films : growth and electrical behavior down to sub-nanometer scale. thesis.

Kazmi, Syed Naveed Riaz (2014) Capacitively transduced polycrystalline GeSi MEM resonators. thesis.

Roy, Deepu (2011) Characterization of electrical contacts for phase change memory cells. thesis.

Kaleli, Buket (2013) Characterization of strained silicon FinFETs and the integration of a piezoelectric layer. thesis.

Herfst, Roelof Willem (2008) Degradation of RF MEMS capacitive switches. thesis.

Wang, Zhichun (2004) Detection of and protection against plasma charging damage in modern ic technology. thesis.

Ackaert, Jan Germain Gabriel (2004) Dielectric engineering: characterization, development and proces damage minimization of various silicon oxides. thesis.

Jinesh, Kochupurackal Balakrishna Pillai (2010) Dielectric properties of atomic-layer-deposited LayZr1-yOx and EryHf1-yOx thin films. thesis.

Isai, Gratiela Ileana (2003) ECR plasma deposited SiO2 and Si3N4 layers : a room temperature technology. thesis.

Merticaru, Andreea Ruxandra (2004) Electrical instability of A-Si:H/SiN thin film transistors : a study at room temperature and low voltage stress. thesis.

Golo, Natasa (2002) Electrostatic Discharge Effects in Thin Film Transistors. thesis.

Sowariraj, Mary Sheela Bobby (2005) Full chip modelling of ICs under CDM stress. thesis.

Houtsma, Vincent Etienne (2000) Gate Oxide Reliability of Poly-Si and Poly-SiGe CMOS Devices. thesis.

Steen, Jan-Laurens Pieter Jacobus van der (2011) Geometrical scaling effects on carrier transport in ultrathin-body MOSFETs. thesis.

Tu, Hoang (2007) High efficient infrared-light emission from silicon LEDs. thesis.

Bankras, Radko Gerard (2006) In-situ RHEED and characterization of ALD Al2O3 gate dielectrics. thesis.

Andricciola, Pietro (2011) Interpretation of MOS transistor mismatch signature through statistical device simulations. thesis.

Rangarajan, Balaji (2013) Materials for monolithic integration of optical functions on CMOS. thesis.

Groenland, Alfons Wouter (2011) Nanolink-based thermal devices: integration of ALD TiN thin films. thesis.

Pol, Jacob Antonius van der (2000) New Methods for Building-In and Improvement of Integrated Circuit Reliability : Application to High Volume Semiconductor Manufacturing. thesis.

Boselli, Gianluca (2001) On High Injection Mechanisms in Semiconductor Devices under ESD Conditions. thesis.

Melai, Joost (2010) Photon imaging using post-processed CMOS chips. thesis.

Nicollian, Paul Edward (2007) Physics of trap generation and electrical breakdown in ultra-thin SiO2 and SiON gate dielectric materials. thesis.

Boogaard, Arjen (2011) Plasma-enhanced chemical vapor deposition of silicon dioxide : optimizing dielectric films through plasma characterization. thesis.

Blanco Carballo, Víctor Manuel (2009) Radiation imaging detectors made by wafer post-processing of CMOS chips. thesis.

Jose, Sumy (2011) Reflector stack optimization for bulk acoustic wave resonators. thesis.

Sasse, Guido Theodor (2008) Reliability engineering in RF CMOS. thesis.

Stavitski, Natalie (2009) Silicide-to-silicon specific contact resistance characterization : test structures and models. thesis.

Le Minh, Phuong (2003) Silicon Light Emitting Devices for Integrated Applications. thesis.

Lu, Jiwu (2011) Solar cells on CMOS chips as energy harvesters - integration and CMOS compatibility. thesis.

Nguyen Nhu, Toan (1999) Spin-On Glass: Materials and Applications in Advanced IC Technologies. thesis.

Kolhatkar, Jay Sudhir (2005) Steady-state and cyclo-stationary RTS noise in mosfets. thesis.

Hemert, Tom van (2013) Tailoring strain in microelectronic devices. thesis.

Tiggelman, Markus Petrus Josephus (2009) Thin film barium strontium titanate capacitors for tunable RF front-end applications. thesis.

Faber, Erik Jouwert (2006) Towards the hybrid organic semiconductor fet (hosfet) : electrical and electrochemical characterization of functionalized and unfunctionalized, covalently bound organic monolayers on silicon surfaces. thesis.

Cubaynes, Florence Nathalie (2004) Ultra-thin plasma nitride oxide gate dielectrics for advanced MOS transistors. thesis.

This list was generated on Sat Aug 30 06:07:54 2014 CEST.