Author Publications

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Jump to: 2006 | 2005
Number of items: 7.

2006

Bankras, R.G. and Holleman, J. and Schmitz, J. and Sturm, J.M. and Zinine, A. and Wormeester, H. and Poelsema, B. (2006) In Situ Reflective High-Energy Electron Diffraction Analysis During the Initial Stage of a Trimethylaluminum/Water ALD Process. Chemical Vapor Deposition, 12 (5). pp. 275-280. ISSN 0948-1907

Karakaya, K. and Barcones, B. and Zinine, A. and Rittersma, Z.M. and Graat, P. and Berkum, J.G.M. van and Verheijen, M.A. and Rijnders, G. and Blank, D.H.A. (2006) Laminated CeO2/HfO2 High-K Gate Dielectrics Grown by Pulsed Laser Deposition in Reducing Ambient. ECS Transactions, 3 (3). 521-533 .

Karakaya, K. and Zinine, A. and Berkum, J.G.M. van and Verheijen, M.A. and Rittersma, Z.M. and Rijnders, G. and Blank, D.H.A. (2006) Characterization of Laminated CeO2-��HfO2 High-k Gate Dielectrics Grown by Pulsed Laser Deposition. Journal of the Electrochemical Society, 153 (10). F233-F236. ISSN 00134651

Kovalgin, A.Y. and Zinine, A. and Bankras, R.G. and Wormeester, H. and Poelsema, B. and Schmitz, J. (2006) On the growth of native oxides on hydrogen-terminated silicon surfaces in dark and under illumination with light. In: Proceedings of the Electrochemical Society, 29 okt - 3 nov 2006, Cancun, Mexico (pp. pp. 191-202).

2005

Sturm, J.M. and Zinine, A. and Wormeester, H. and Bankras, R.G. and Holleman, J. and Schmitz, J. and Poelsema, B. (2005) Laterally resolved electrical characterisation of high-L oxides with non-contact Atomic Force Microscopy. Microelectronic Engineering, 80 . pp. 78-81. ISSN 0167-9317

Sturm, J.M. and Zinine, A. and Wormeester, H. and Poelsema, B. and Bankras, R.G. and Holleman, J. and Schmitz, J. (2005) Imaging of oxide charges and contact potential difference fluctuations in Atomic Layer Deposited AL203 on Si. Journal of Applied Physics, 97 (6). 063709. ISSN 0021-8979

Sturm, J.M. and Zinine, A.I. and Wormeester, H. and Poelsema, B. and Bankras, R.G. and Holleman, J. and Schmitz, J. (2005) Nanoscale topography-capacitance correlation in high-K films: Interface heterogeneity related electrical properties. Journal of Applied Physics, 98 (7). 076104-1. ISSN 0021-8979

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