Author Publications

2012

Verhoeven, M.L.P.M. and Bystrova, S.N. and Winnubst, A.J.A. and Qureshi, H.F. and Gruijl de, T.D. and Scheper, R.J. and Luttge, R. (2012) Applying ceramic nanoporous microneedle arrays as a transport interface in egg plants and an ex-vivo human skin model. Microelectronic engineering, 98 . 659 - 662. ISSN 0167-9317

2007

Bystrova, S. and Luttge, R. and Berg van den, A. (2007) Study of crack formation in high-aspect ratio SU-8 structures on silicon. Microelectronic Engineering, 84 . pp. 1113-1116. ISSN 0167-9317

2005

Bystrova, S. and Aarnink, A.A.I. and Holleman, J. and Wolters, R.A.M. (2005) Atomic Layer Deposition of W1.5N Barrier Films for Cu Metallization: Process and Characterization. Journal of the Electrochemical Society, 152 (7). G522-G527. ISSN 0013-4651

Bystrova, S. and Holleman, J. and Aarnink, A.A.I. and Wolters, R.A.M. (2005) Barrier properties of ALD1,5N thin films. In: International Conference on Advanced Metallization, 19-21 October 2004, San Diego, California, USA.

2004

Bystrova, Svetlana (2004) Diffusion barriers for Cu metallisation in Si integrated circuits : deposition and related thin film properties. thesis.

2003

Bystrova, S. and Holleman, J. and Wolters, R.A.M. and Aarnink, A.A.I. (2003) Atomic layer deposition of W - based layers on SiO2. In: 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003, 25-26 November 2003, Veldhoven, The Netherlands.

2002

Bystrova, S. and Holleman, J. and Woerlee, P.H. and Wolters, R.A.M. (2002) Characterization of Ta-based barrier films on SiLK for Cu-metalization. In: 5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002, 27-28 November 2002, Veldhoven, The Netherlands.

2001

Bystrova, S. and Holleman, J. and Woerlee, P.H. (2001) Growth and properties of LPCVD W-Si-N barrier layers. Microelectronic Engineering, 55 (1-4). pp. 189-195. ISSN 0167-9317