Verhoeven, M.L.P.M. and Bystrova, S.N. and Winnubst, A.J.A. and Qureshi, H.F. and Gruijl de, T.D. and Scheper, R.J. and Luttge, R. (2012) Applying ceramic nanoporous microneedle arrays as a transport interface in egg plants and an ex-vivo human skin model. Microelectronic engineering, 98 . 659 - 662. ISSN 0167-9317
Bystrova, S. and Luttge, R. and Berg van den, A. (2007) Study of crack formation in high-aspect ratio SU-8 structures on silicon. Microelectronic Engineering, 84 . pp. 1113-1116. ISSN 0167-9317
Bystrova, S. and Aarnink, A.A.I. and Holleman, J. and Wolters, R.A.M. (2005) Atomic Layer Deposition of W1.5N Barrier Films for Cu Metallization: Process and Characterization. Journal of the Electrochemical Society, 152 (7). G522-G527. ISSN 0013-4651
Bystrova, S. and Holleman, J. and Aarnink, A.A.I. and Wolters, R.A.M. (2005) Barrier properties of ALD1,5N thin films. In: International Conference on Advanced Metallization, 19-21 October 2004, San Diego, California, USA.
Bystrova, Svetlana (2004) Diffusion barriers for Cu metallisation in Si integrated circuits : deposition and related thin film properties. thesis.
Bystrova, S. and Holleman, J. and Wolters, R.A.M. and Aarnink, A.A.I. (2003) Atomic layer deposition of W - based layers on SiO2. In: 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003, 25-26 November 2003, Veldhoven, The Netherlands.
Bystrova, S. and Holleman, J. and Woerlee, P.H. and Wolters, R.A.M. (2002) Characterization of Ta-based barrier films on SiLK for Cu-metalization. In: 5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002, 27-28 November 2002, Veldhoven, The Netherlands.
Bystrova, S. and Holleman, J. and Woerlee, P.H. (2001) Growth and properties of LPCVD W-Si-N barrier layers. Microelectronic Engineering, 55 (1-4). pp. 189-195. ISSN 0167-9317