Author Publications

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Jump to: 2008 | 2005 | 2004 | 2003 | 2002 | 2001 | 2000
Number of items: 9.

2008

Kovalgin, Alexey Y. and Isai, Gratiela and Holleman, Jisk and Schmitz, Jurriaan (2008) Low-Temperature SiO2 Layers Deposited by Combination of ECR Plasma and Supersonic Silane/Helium Jet. Journal of the Electrochemical Society, 155 (2). G21-G28. ISSN 0013-4651

2005

Aarnink, A.A.I. and Boogaard, A. and Brunets, I. and Isai, I.G. and Kovalgin, A.Y. and Holleman, J. and Wolters, R.A.M. and Schmitz, J. (2005) A high-density inductively-coupled remote plasma system for the deposition of dielectrics and semiconductors. In: 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005 (SAFE 2005), 17-18 November 2005, Veldhoven, the Netherlands (pp. pp. 67-69).

Brunets, I. and Boogaard, A. and Isai, I.G. and Aarnink, A.A.I. and Kovalgin, A.Y. and Holleman, J. and Schmitz, J. (2005) Three-dimensional IC's prolong the life of Moore's law. In: 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005 (SAFE 2005), 17-18 November 2005, Veldhoven, the Netherlands (pp. pp. 76-78).

2004

Isai, Gratiela I. and Holleman, Jisk and Wallinga, Hans and Woerlee, Pierre H. (2004) Low Hydrogen Content Silicon Nitride Films Deposited at Room Temperature with an ECR Plasma Source. Journal of the Electrochemical Society, 151 (10). C649-C654. ISSN 0013-4651

Isai, Gratiela I. and Holleman, Jisk and Wallinga, Hans and Woerlee, Pierre H. (2004) Conduction and trapping mechanisms in SiO2 films grown near room temperature by multipolar electron cyclotron resonance plasma enhanced chemical vapor deposition. Journal of Vacuum Science & Technology B: Microelectronics and nanometer structures, 22 (3). pp. 1022-1029. ISSN 1071-1023

2003

Isai, Gratiela Ileana (2003) ECR plasma deposited SiO2 and Si3N4 layers : a room temperature technology. thesis.

2002

Isai, I.G. and Holleman, J. and Woerlee, P.H. and Wallinga, H. (2002) Silicon nitride layers obtained by ECR PECVD. In: 5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002, 27-28 November 2002, Veldhoven, The Netherlands (pp. pp. 39-41).

2001

Isai, Gratiela and Holleman, Jisk and Woerlee, Pierre and Wallinga, Hans (2001) Electronic conduction processes in SiO2 films obtained by ECR PECVD. In: 4th annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001, 28-30 Nov 2001, Veldhoven, The Netherlands (pp. pp. 76-81).

2000

Isai, G.I. and Kovalgin, A.Y. and Holleman, J. and Woerlee, P.H. and Wallinga, H. and Cobianu, C. (2000) Electrical Characterisation of Gate Dielectrics Deposited with Multipolar Electron Cyclotron Resonance Plasma Source. In: 30th European Solid State Device Research Conference, 11-13 September 2000, Cork, Ireland (pp. pp. 424-427).

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