Author Publications

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Number of items: 9.

Article

Akil, N. and Houtsma, V.E. and Le Minh, P. and Holleman, J. and Zieren, V. and Mooij, D. de and Woerlee, P.H. and Berg, A. van den and Wallinga, H. (2000) Modeling of Light Emission Spectra Measured on Silicon Nanometer-Scale Diode-Antifuses. Journal of Applied Physics, 88 (4). pp. 1916-1922. ISSN 0021-8979

Houtsma, V.E. and Holleman, J. and Salm, C. and Widdershoven, F.P. and Woerlee, P.H. (1999) Stress-Induced Leakage Current in p+ Poly MOS Capacitors with Poly-Si and Poly-Si0.7Ge0.3 Gate Material. IEEE Electron Device Letters, 1999 (20). pp. 314-316. ISSN 0741-3106

Houtsma, V.E. and Holleman, J. and Salm, C. and Woerlee, P.H. (1999) SILC in MOS capacitors with poly-Si and poly-Si0.7Ge0.3 gate material. Microelectronic Engineering, 48 (1-4). pp. 415-418. ISSN 0167-9317

Conference or Workshop Item

Houtsma, V.E. and Holleman, J. and Akil, N.A. and Le Minh, P. and Zieren, V. and Berg, A. van den and Wallinga, H. and Woerlee, P.H. (1999) Visible light emission from reverse-biased silicon nanometer-scale diode-antifuses. In: International Semiconductor Conference, CAS 1999, 5-9 October 1999, Sinaia, Romania (pp. pp. 461-465).

Houtsma, V.E. and Holleman, J. and Salm, C. and Haan, I.R. de and Schmitz, J. and Widdershoven, F.P. and Woerlee, P.H. (1999) Minority Carrier Tunneling and Stress-Induced Leakage Current for p+ gate MOS Capacitors with Poly-Si and PolySi0.7Ge0.3 Gate Material. In: International Electron Devices Meeting, 1999. IEDM Technical Digest, IEDM, Washington, USA (pp. pp. 457-460).

Kovalgin, A.Y. and Akil, N.A. and Le Minh, P. and Holleman, J. and Berg, A. van den and Houtsma, V.E. and Wallinga, H. (2000) Nano-scale hotspots: a route to fast, real time and reliable gas sensing. In: SeSens workshop on Semiconductor Sensor and Actuator Technology, Nov. 30 - Dec. 1, 2000, Veldhoven, The Netherlands (pp. pp. 651-654).

Le Minh, P. and Akil, N.A. and Houtsma, V.E. and Woerlee, P.H. and Wallinga, H. and Berg, A. van den and Holleman, J. (1999) Light Emission Spectra as Experimental Evidence for the Morphology of Silicon-based Antifuse Diode Structure. In: SAFE'99, Annual Workshop on Semiconductor Advances for Future Electronics, Nov. 24-25, 1999, Mierlo, The Netherlands (pp. pp. 265-268).

Salm, Cora and Houtsma, Vincent and Kuper, Fred and Woerlee, Pierre (2001) Temperature acceleration of thin gate-oxide degradation. In: 4th annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001, 28-30 Nov 2001, Veldhoven, The Netherlands (pp. pp. 174-177).

Thesis

Houtsma, Vincent Etienne (2000) Gate Oxide Reliability of Poly-Si and Poly-SiGe CMOS Devices. thesis.

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