Author Publications

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Number of items: 106.

2013

Graaf, H. van der and Aarnink, A.A.I. and Aarts, A. and Bakel, N. van and Berbee, E. and Berkien, A. and Beuzekom, M. van and Bosma, M. and Campbell, M. and Chefdeville, M.A. and Colas, P. and Colijn, A.-P. and Fomaini, A. and Fransen, M. and Giganon, A. and Giomataris, I. and Gotink, W. and Groot, N. de and Hartjes, F. and Heijden, B. van der and Hessey, N. and Jansweijer, P. and Konig, A. and Koppert, W. and Llopart, X. and Nooij, L. de and Putten, S. van der and Rövekamp, J. and Salm, C. and San Segundo Bello, D. and Schmitz, J. and Smits, S.M. and Timmermans, J. and Verkooijen, H. and Visschers, J. and Visser, J. and Wijnen, T. and Wyrsch, N. (2013) The gridpix detector: history and perspective. Modern Physics Letters A, 28 (28-13). pp. 13400211-13400217. ISSN 0217-7323

Kazmi, S.N.R. and Salm, C. and Schmitz, J. (2013) Deep reactive ion etching of in situ boron doped LPCVD $Ge_{0.7}Si_{0.3}$ using $SF_6$ and $O_2$ plasma. Microelectronic engineering, 110 . pp. 311-314. ISSN 0167-9317

Wang, J and Salm, Cora and Schmitz, Jurriaan (2013) Comparison of C-V measurement methods for RF-MEMS capacitive switches. In: IEEE International Conference on Microelectronic Test Structures, ICMTS 2013, 25-28 March, 2013, San Diego, CA, USA (pp. pp. 53-58).

2012

Boksteen, B.K. and Dhar, S. and Ferrara, A. and Heringa, A. and Hueting, R.J.E. and Koops, G.E.J. and Salm, C. and Schmitz, J. (2012) On the degradation of field-plate assisted RESURF power devices. In: IEEE International Electron Devices Meeting, IEDM 2012 , 10-13 December 2012, San Francisco, CA, USA (pp. pp. 311-314).

Kazmi, S.N.R. and Kovalgin, A.Y. and Aarnink, A.A.I. and Salm, C. and Schmitz, J. (2012) Low-stress highly-conductive in-situ boron doped Ge$_{0.7}$Si$_{0.3}$ films by LPCVD. ECS journal of solid state science and technology, 1 (5). P222-P226. ISSN 2162-8777

Kazmi, Syed Naveed Riaz and Aarnink, Tom and Salm, Cora and Schmitz, Jurriaan (2012) CMOS-MEMS Post Processing Compatible Capacitively Transduced GeSi Resonators. In: Proceedings of 2012 IEEE International Frequency Control Symposium (IFCS) , 21-24 May 2012, Baltimore, USA (pp. pp. 1-4).

2011

Bilevych, Y. and Blanco Carballo, V.M. and Chefdeville, M.A. and Colas, P. and Delagnes, E. and Fransen, M. and Graaff, H. van der and Koppert, W.J.C. and Melai, J. and Salm, C. and Schmitz, J. and Timmermans, J. and Wyrsch, N. (2011) Spark protection layers for CMOS pixel anode chips in MPGDs. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 629 (1). pp. 66-73. ISSN 0168-9002

Kazmi, S.N.R. and Aarnink, A.A.I. and Kovalgin, A.Y. and Salm, C. and Schmitz, J. (2011) Low Stress In Situ Boron Doped Poly SiGe Layers for MEMS Modular Integration with CMOS. ECS Transactions, 35 (30). pp. 45-52. ISSN 1938-5862

2010

Boksteen, B.K. and Hueting, R.J.E. and Salm, C. and Schmitz, J. (2010) An Initial study on The Reliability of Power Semiconductor Devices. In: STW.ICT Conference 2010, 18-19 Nov 2010, Veldhoven, The Netherlands (pp. pp. 68-72).

Hemert, T. van and Hueting, R.J.E. and Rajasekharan, B. and Salm, C. and Schmitz, J. (2010) On the modelling and optimisation of a novel Schottky based silicon rectifier. In: 40th European Solid-State Device Research, Essderc 2010, 13-17 Sep 2010, Sevilla, Spain (pp. pp. 460-463).

Kazmi, S.N.R. and Rangarajan, B. and Aarnink, T. and Salm, C. and Schmitz, J. (2010) Low Stressed In-situ Boron doped Poly SiGe Layers for High-Q Resonators. In: STW.ICT Conference 2010, 18-19 Nov 2010, Veldhoven, The Netherlands (pp. pp. 109-113).

Melai, J. and Blanco Carballo, V.M. and Salm, C. and Schmitz, J. (2010) Suspended membranes, cantilevers and beams using SU-8 foils. Microelectronic Engineering, 87 (5-8). pp. 1274-1277. ISSN 0167-9317

Melai, Joost and Breskin, Amos and Cortesi, Marco and Bilevych, Yevgen and Fransen, Martin and Graaf, Harry van der and Visschers, Jan and Blanco Carballo, Víctor and Salm, Cora and Schmitz, Jurriaan (2010) A UV sensitive integrated micromegas with timepix readout. Nuclear instruments and methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 628 . pp. 133-137. ISSN 0168-9002

Melai, Joost and Lyashenko, Alexey and Breskin, Amos and Graaf, Harry van der and Timmermans, Jan and Visschers, Jan and Salm, Cora and Schmitz, Jurriaan (2010) An integrated micromegas UV-photon detector. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 633 . pp. 194-197. ISSN 0168-9002

Nguyen, Van Hieu and Salm, Cora (2010) Effect of current crowding on electromigration lifetime investigated by simulation and experiment. Computational Materials Science, 49 (4). pp. 235-238. ISSN 0927-0256

Rajasekharan, B. and Hueting, R.J.E. and Salm, C. and Hemert, T. van and Wolters, R.A.M. and Schmitz, J. (2010) Fabrication and characterization of the charge-plasma diode. IEEE electron device letters, 31 (6). pp. 528-530. ISSN 0741-3106

Salm, Cora and Eijkel, Jan and Heijden, Ferdi van der and Odijk, Mathieu (2010) Adapting to a changing highschool population. In: 8th European Workshop on Microelectronics Education, EWME 2010, 10-12 May 2010, Darmstadt, Germany (pp. pp. 180-184).

2009

Bilevych, Y. and Blanco Carballo, V.M. and Chefdeville, M.A. and Fransen, M. and Graaf, H. van der and Salm, C. and Schmitz, J. and Timmermans, J. (2009) Twingrid: a wafer post-processed multistage micro patterned gaseous detector. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 610 (3). pp. 644-648. ISSN 0168-9002

Blanco Carballo, V.M. and Bilevych, Y. and Chefdeville, M.A. and Fransen, M. and Graaf, H. van der and Salm, C. and Schmitz, J. and Timmermans, J. (2009) GEMGrid: a wafer post-processed GEM-like radiation detector. Nuclear instruments and methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 608 (1). pp. 86-91. ISSN 0168-9002

Blanco Carballo, V.M. and Melai, J. and Salm, C. and Schmitz, J. (2009) Moisture resistance of SU-8 and KMPR as structural material. Microelectronic Engineering, 86 (4-6). pp. 765-768. ISSN 0167-9317

Faber, Erik J. and Wolters, Rob A.M. and Rajasekharan, Bijoy and Salm, Cora and Schmitz, Jurriaan (2009) Monitoring silicide formation via in situ resistance measurements. In: 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE, 26-27 November 2009, Veldhoven, The Netherlands (pp. pp. 67-70).

Kazmi, S.N.R. and Salm, Cora and Schmitz, J. (2009) Materials selection for low temperature processed high Q resonators using ashby approach. In: 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE, 26-27 November 2009, Veldhoven, The Netherlands (pp. pp. 81-84).

Melai, Joost and Lyashenko, Alexey and Breskin, Amos and Graaf, Harry van der and Timmermans, Jan and Visschers, Jan and Salm, Cora and Schmitz, Jurriaan (2009) Photocathodes for a post-processed imaging array. In: 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE, 26-27 November 2009, Veldhoven, The Netherlands (pp. pp. 32-35).

Melai, Joost and Salm, Cora and Smits, Sander and Visschers, Jan and Schmitz, Jurriaan (2009) The electrical conduction and dielectric strength of SU-8. Journal of Micromechanics and Microengineering, 19 (6). 065012. ISSN 0960-1317

Melai, Joost and Salm, Cora and Wolters, Rob and Schmitz, Jurriaan (2009) Qualitative and quantitative characterization of outgassing from SU-8. Microelectronic Engineering, 86 (4-6). pp. 761-764. ISSN 0167-9317

Rajasekharan, B. and Salm, C. and Wolters, R.A.M. and Aarnink, A.A.I. and Boogaard, A. and Schmitz, J. (2009) Metal contacts to lowly doped Si and ultra thin SOI. In: Proceedings of Fifth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, 19-21 Jan 2009, Gotheburg, Sweden (pp. pp. 29-30).

Rajasekharan, Bijoy and Salm, Cora and Hueting, Ray and Wolters, Rob and Schmitz, Jurriaan (2009) Metal contacts to lowly doped Si and ultra thin SOI. In: 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE, 26-27 November 2009, Veldhoven, The Netherlands (pp. pp. 103-104).

2008

Blanco Carballo, V.M. and Melai, J. and Salm, C. and Schmitz, J. (2008) Moisture resistance of SU-8 and KMPR as structural material for integrated gaseous detectors. In: 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008, 27-28 November 2008, Veldhoven, The Netherlands (pp. pp. 395-398).

Blanco Carballo, Víctor Manuel and Chefdeville, Maximilien and Fransen, Martin and Graaf, Harry van der and Melai, Joost and Salm, Cora and Schmitz, Jurriaan and Timmermans, Jan (2008) A Radiation Imaging Detector Made by Postprocessing a Standard CMOS Chip. IEEE Electron Device Letters, 29 (6). pp. 585-588. ISSN 0741-3106

Chefdeville, M. and Graaf, H. van der and Hartjes, F. and Timmermans, J. and Visschers, J. and Blanco Carballo, V.M. and Salm, C. and Schmitz, J. and Smits, S. and Colas, P. and Giomataris, I. (2008) Pulse height fluctuations of integrated micromegas detectors. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 591 (1). pp. 147-150. ISSN 0168-9002

Hueting, R.J.E. and Rajasekharan, B. and Salm, C. and Schmitz, J. (2008) The charge plasma P-N diode. IEEE electron device letters, 29 (12). pp. 1367-1369. ISSN 0741-3106

Melai, Joost and Blanco Carballo, Víctor M. and Salm, Cora and Wolters, Rob and Schmitz, Jurriaan (2008) Further outgassing studies on SU-8. In: 11th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2008, 27-28 November 2008, Veldhoven, The Netherlands (pp. pp. 491-494).

Nijhuis, Christian A. and Maat, Jurjen ter and Bisri, Satria Z. and Weusthof, Marcel H.H. and Salm, Cora and Schmitz, Jurriaan and Ravoo, Bart Jan and Huskens, Jurriaan and Reinhoudt, David N. (2008) Preparation of metal-SAM-dendrimer-SAM-metal junctions by supramolecular metal transfer printing. New Journal of Chemistry, 32 (4). pp. 652-661. ISSN 1144-0546

Nijhuis, Christian A. and Maat, Jurjen ter and Bisri, Satria Z. and Weusthof, Marcel H.H. and Salm, Cora and Schmitz, Jurriaan and Ravoo, Bart Jan and Huskens, Jurriaan and Reinhoudt, David N. (2008) Preparation of metal–SAM–dendrimer–SAM–metal junctions by supramolecular metal transfer printing,. New Journal of Chemistry, 32 . pp. 652-661. ISSN 1144-0546

Rajasekharan, B. and Salm, C. and Hueting, R.J.E. and Hoang, T. and Schmitz, J. (2008) Dimensional scaling effects on transport properties of ultrathin body p-i-n diodes. In: Proceedings of the 9th Conference on ULtimate Integration on Silicon, 12-14 Mar 2008, Udine, Italy (pp. pp. 195-198).

Rajasekharan, B. and Hueting, R.J.E. and Salm, C. and Hoang, T. and Schmitz, J. (2008) Charge plasma diode - a novel device concept. In: Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008), 27-28 Nov 2008, Veldhoven, The Netherlands (pp. pp. 576-579).

Salm, Cora and Blanco Carballo, Víctor M. and Melai, Joost and Schmitz, Jurriaan (2008) Reliability aspects of a radiation detector fabricated by post-processing a standard CMOS chip. Microelectronics Reliability, 48 (8-9). pp. 1139-1143. ISSN 0026-2714

Schmitz, J. and Vries, R. de and Salm, C. and Hoang, T. and Hueting, R.J.E. and Holleman, J. (2008) On the switching speed of SOI LEDs. In: Proceedings of the Fourth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, 23-25 Jan 2008, Cork, Ireland (pp. pp. 101-102).

2007

Blanco Carballo, V.M. and Chefdeville, M. and Colas, P. and Giomataris, Y. and Graaf, H. van der and Gromov, V. and Hartjes, F. and Kluit, R. and Koffeman, E. and Salm, C. and Schmitz, J. and Smits, S.M. and Timmermans, J. and Visschers, J.L. (2007) Charge amplitude distribution of the Gossip gaseous pixel detector. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 583 (1). pp. 42-48. ISSN 0168-9002

Blanco Carballo, V.M. and Salm, C. and Smits, S.M. and Schmitz, J. and Chefdeville, M. and Graaf, H. van der and Timmermans, J. and Visschers, J.L. (2007) On the geometrical design of integrated micromegas detectors. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 576 (1). pp. 1-4. ISSN 0168-9002

Blanco Carballo, V.M. and Salm, C. and Smits, S.M. and Schmitz, J. and Melai, J. and Chefdeville, M. and Graaf, H. van der (2007) Technological aspects of gaseous pixel detectors fabrication. In: 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE), 29-30 Nov. 2007, Veldhoven, The Netherlands (pp. pp. 501-503).

Melai, Joost and Salm, Cora and Smits, Sander and Blanco Carballo, Víctor M. and Schmitz, Jurriaan and Hageluken, Ben (2007) Considerations on using SU-8 as a construction material for high aspect ratio structures. In: 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE), 29-30 Nov. 2007, Veldhoven, The Netherlands (pp. pp. 529-534).

Rajasekharan, B. and Salm, C. and Hueting, R.J.E. and Hoang, T. and Wiel, W.G. van der and Schmitz, J. (2007) Dimensional scaling effects on transport properties of p-i-n diodes. In: 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE), 29-30 Nov 2007, Veldhoven, The Netherlands (pp. pp. 457-459).

Salm, Cora and Hoekstra, Eric and Kolhatkar, Jay S. and Hof, André J. and Wallinga, Hans and Schmitz, Jurriaan (2007) Low-frequency noise in hot-carrier degraded nMOSFETs. Microelectronics Reliability, 47 (4-5). pp. 577-580. ISSN 0026-2714

Wel, Arnoud P. van der and Klumperink, Eric A.M. and Kolhatkar, Jay S. and Hoekstra, Eric and Snoeij, Martijn F. and Salm, Cora and Wallinga, Hans and Nauta, Bram (2007) Low-Frequency Noise Phenomena in Switched MOSFETs. IEEE Journal of Solid-State Circuits, 42 (3). pp. 540-550. ISSN 0018-9200

2006

Aarts, A.A. and Blanco Carballo, V.M. and Chefdeville, M. and Colas, P. and Dunand, S. and Fransen, M. and Graaf, H. van der and Giomataris, Y. and Hartjes, F. and Koffeman, G. and Melai, J. and Peek, H. and Riegler, W. and Salm, C. and Schmitz, J. and Smits, S.M. and Timmermans, J. and Visschers, J.L. and Wyrsch, N. (2006) Discharge Protection and Ageing of Micromegas Pixel Detectors. In: 2006 IEEE Nuclear Science Symposium Conference Record, 29 Oct - 4 Nov 2006, San Diego, CA, USA (pp. pp. 3865-3869).

Blanco Carballo, V.M. and Chefdeville, M. and Graaf, H. van der and Salm, C. and Aarnink, A.A.I. and Smits, S.M. and Altpeter, D.M. and Timmermans, J. and Visschers, J.L. and Schmitz, J. (2006) A miniaturized multiwire proportional chamber using CMOS wafer scale post-processing. In: 32nd European Solid State Device Research Conference, 02-06 July 2006, Montreux, Switzerland (pp. pp. 129-132).

Blanco Carballo, V.M. and Salm, C. and Smits, S.M. and Schmitz, J. and Chefdeville, M. and Graaf, H. van der and Timmermans, J. and Visschers, J.L. (2006) An integrated gaseous detector using microfabrication post-processing technology. In: 9th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, 23-24 Nov. 2006, Veldhoven, The Netherlands (pp. pp. 369-372).

Melai, J. and Salm, C. and Schmitz, J. and Smits, S.M. and Visschers, J.L. (2006) An integrated single photon detector array using porous anodic alumina. In: Proceedings of 8th IWORID (International Workshop on Radiation Imaging Detectors), 2 - 6 July 2006, Pisa, Italy (pp. p. 1).

Melai, J. and Salm, C. and Schmitz, J. and Smits, S.M. and Visschers, J.L. (2006) An integrated single photon detector array using porous anodic alumina. In: Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006, 23-24 Nov 2006, Veldhoven, The Netherlands (pp. pp. 389-393).

Salm, C. and Hoekstra, E. and Kolhatkar, J.S. and Hof, A.J. and Wallinga, H. and Schmitz, J. (2006) Low-Frequency noise in hot-carrier degraded MOSFETs. In: 14th workshop on dielectrics in microelectronics WODIM, 26-28 june 2006, Santa Tecla, Italy (pp. pp. 64-65).

Salm, C. and Hof, A.J. and Kuper, F.G. and Schmitz, J. (2006) Reduced temperature dependence of hot carrier degradation in deuterated nMOSFETs. Microelectronics Reliability, 46 (9-11). pp. 1617-1622. ISSN 0026-2714

2005

Chefdeville, M. and Colas, P. and Giomataris, Y. and Graaf, H. van der and Heijne, E.H.M. and Putten, S. van der and Salm, C. and Schmitz, J. and Smits, S.M. and Timmermans, J. and Visschers, J.L. (2005) An electron-multiplying ‘Micromegas’ grid made in silicon wafer post-processing technology. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 556 (2). pp. 490-494. ISSN 0168-9002

Chefdeville, M. and Colas, P. and Giomataris, Y. and Graaf, H. van der and Heijne, E.H.M. and Putten, S. van der and Salm, C. and Schmitz, J. and Smits, S. and Timmermans, J. and Visschers, J.L. (2005) An electron-multiplying 'Micromegas' grid made in silicon wafer post-processing technology. In: SAFE 2005, 8th Annual Workshop on Circuits, Systems and Signal Processing, 17-18 Nov. 2005, Veldhoven, the Netherlands (pp. pp. 139-142).

Klumperink, Eric and Wel, Arnoud van der and Kolhatkar, Jay and Hoekstra, Eric and Salm, Cora and Wallinga, Hans and Nauta, Bram (2005) Reduction of 1/f Noise by Switched Biasing: An Overview. In: ProRISC 2005, 16th Workshop on Circuits, Systems and Signal Processing, 17-18 November 2005, Veldhoven, The Netherlands (pp. pp. 307-311).

Kolhatkar, Jay and Hoekstra, Eric and Hof, André and Salm, Cora and Schmitz, Jurriaan and Wallinga, Hans (2005) Impact of Hot-Carrier Degradation on the Low-Frequency Noise in MOSFETs Under Steady-State and Periodic Large-Signal Excitation. IEEE Electron Device Letters, 26 (10). pp. 764-766. ISSN 0741-3106

Sowariraj, M.S.B. and Jong, P.C. de and Salm, C. and Mouthaan, A.J. and Kuper, F.G. (2005) A 3-D circuit model to evaluate CDM performance of ICs. Microelectronics Reliability, 45 (9-11). pp. 1425-1429. ISSN 0026-2714

Sowariraj, M.S.B. and Jong, Peter C. de and Salm, Cora and Smedes, Theo and Mouthaan, A.J. Ton and Kuper, Fred G. (2005) Significance of Including Substrate Capacitance in the Full Chip Circuit Model of ICs under CDM Stress. In: 43th Annual International Reliability Physics Symposium, April 17-21, 2005, San Jose, CA, USA (pp. pp. 608-609).

Wang, Z. and Ackaert, J. and Scarpa, A. and Salm, C. and Kuper, F.G. and Vugts, M. (2005) Strategies to Cope with Plasma Charging Damage in Design and Layout Phases. In: International Conference on Integrated Circuit Design and Technology, ICICDT, 9-11 May 2005, Austin, Texas, USA (pp. pp. 91-98).

2004

Kolhatkar, J.S. and Hoekstra, E. and Salm, C. and Wel, A.P. van der and Klumperink, E.A.M. and Schmitz, J. and Wallinga, H. (2004) Modeling of RTS Noise in MOSFETs under Steady-State and Large-Signal Excitation. In: IEEE International Electron Devices Meeting, IEDM, 13-15 Dec. 2004, San Francisco, CA, USA (pp. pp. 759-762).

Nguyen, H.V. and Salm, C. and Krabbenborg, B. and Weide-Zaage, K. and Bisschop, J. and Mouthaan, A.J. and Kuper, F.G. (2004) Effect of Thermal Gradients on the Electromigration Lifetime in Power Electronics. In: IEEE 42nd Annual International Reliability Physics Symposium, 25-29 April 2004, Phoenix, Arizona, USA (pp. pp. 619-620).

Nguyen, H.V. and Salm, C. and Krabbenborg, B.H. and Bisschop, J. and Mouthaan, A.J. Ton and Kuper, Fred G. (2004) Fast Thermal Cycling-Enhanced Electromigration in Power Metallization. IEEE Transactions on Device and Materials Reliability, 4 (2). pp. 246-255. ISSN 1530-4388

Sowariraj, M.S.B. and Salm, Cora and Smedes, Theo and Mouthaan, A.J. Ton and Kuper, Fred G. (2004) Full chip model of CMOS Integrated Circuits under Charged Device Model stress. In: SAFE 2004, 7th Annual Workshop on Semiconductor Advances for Future Electronics, 25-26 Nov 2004, Veldhoven, the Netherlands (pp. pp. 801-807).

Wang, Z. and Ackaert, J. and Salm, C. and Kuper, F.G. and De Backer, E. (2004) Plasma charging damage reduction in IC processing by a self-balancing interconnect. Microelectronics Reliability, 44 (9-11). pp. 1503-1507. ISSN 0026-2714

Wang, Zhichun and Ackaert, Jan and Salm, Cora and Kuper, Fred G. and Tack, Marnix and De Backer, Eddy and Coppens, Peter and De Schepper, Luc and Vlachakis, Basil (2004) Plasma-Charging Damage of Floating MIM Capacitors. IEEE Transactions on Electron Devices, 51 (6). pp. 1017-1024. ISSN 0018-9383

2003

Galca, Aurelian C. and Kooij, E. Stefan and Wormeester, Herbert and Salm, Cora and Leca, Victor and Rector, Jan H. and Poelsema, Bene (2003) Structural and optical characterization of porous anodic aluminium oxide. Journal of Applied Physics, 94 (7). pp. 4296-4305. ISSN 0021-8979

Kolhatkar, J.S. and Salm, C. and Wallinga, H. (2003) Separation of random telegraph signals from 1/f noise in MOSFETs. In: Proceedings of the 6th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2003, 25 - 26 November 2003, Veldhoven, The Netherlands (pp. pp. 614-617).

Kolhatkar, J.S. and Vandamme, L.K.J. and Salm, C. and Wallinga, H. (2003) Separation of Random Telegraph Signals from 1/f Noise in MOSFETs under Constant and Switched Bias Conditions. In: 33rd Conference on European Solid-State Device Research, ESSDERC, 16-18 Sept. 2003 , Lisboa, Portugal (pp. pp. 549-552).

Kolhatkar, J.S. and Wel, A.P. van der and Klumperink, E.A.M. and Salm, C. and Nauta, B. and Wallinga, H. (2003) Measurement and extraction of RTS Parameters under 'Switched Biased' conditions in MOSFETS. In: 17th International Conference on Noise and Fluctuations, ICNF 2003, 18-22 August 2003, Prague, Czech Republic (pp. pp. 237-240).

Nguyen, H.V. and Salm, C. and Krabbenborg, B.H. and Bisschop, J. and Mouthaan, A.J. and Kuper, F.G. (2003) A reliability model for interlayer dielectrics cracking during very fast thermal cycling. In: Advanced Metallization Conference 2003, September 29 - October 1, 2003 (Tokyo) and 21-23 October 2003 (Montreal), Tokyo, Japan and Montreal, Canada (pp. pp. 295-299).

Nguyen, H.V. and Salm, C. and Krabbenborg, B.H. and Bisschop, J. and Mouthaan, A.J. and Kuper, F.G. (2003) Electrothermomigration-induced failure in power IC metallization. In: 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003, 25-26 November 2003, Veldhoven, The Netherlands (pp. pp. 622-630).

Sowariraj, M.S.B. and Smedes, Theo and Salm, Cora and Mouthaan, Ton and Kuper, Fred G. (2003) Role of package parasitics and substrate resistance on the Charged Device Model (CDM) failure levels - An explantion and die protection strategy. Microelectronics Reliability, 43 (9-11). pp. 1569-1575. ISSN 0026-2714

Sowariraj, M.S.B. and Smedes, Theo and Salm, Cora and Mouthaan, Ton and Kuper, Fred G. (2003) Study on the influence of package parasitics and substrate resistance on the Charged Device Model(CDM) failure levels - possible protection methodology. In: 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003, 25-26 November 2003, Veldhoven, The Netherlands (pp. pp. 657-662).

Wang, Zhichun and Ackaert, Jan and Salm, Cora and Kuper, Fred G. and Bessemans, Klara and Backer, Eddy de (2003) Plasma charging damage induced by a power ramp down step in the end of plasma enhanced chemical vapour deposition (PECVD) process. In: 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003, 25-26 November 2003, Veldhoven, The Netherlands (pp. pp. 766-770).

2002

Ackaert, Jan and Wang, Zhichun and Backer, Eddy de and Salm, Cora (2002) Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide. In: 7th International Symposium of Plasma Process-Induced Damage, June 6-7, 2002, Maui, Hawaii, USA (pp. 45- 48).

Kolhatkar, J.S. and Salm, C. and Knitel, M.J. and Wallinga, H. (2002) Constant and Switched Bias Low Frequency Noise in p-MOSFETs with Varying Gate Oxide Thickness. In: 32nd European Solid-State Device Research Conference, ESSDERC, 24-26 September 2002, Firenze, Italy (pp. pp. 83-86).

Kolhatkar, J.S. and Salm, C. and Wallinga, H. (2002) Analysis of 'Switched Biased' random telegraph signals in MOSFETs. In: Proceedings of the 5th annual workshop on Semiconductors Advances for Future Electronics SAFE 2002, 27-28 November 2002, Veldhoven, The Netherlands (pp. pp. 42-45).

Nguyen, H. and Salm, C. and Vroemen, J. and Voets, J. and Krabbenborg, B.H. and Bisschop, J. and Mouthaan, A.J. and Kuper, F.G. (2002) Fast temperature cycling stress-induced and electromigration-induced interlayer dielectric cracking failure in multilevel interconnection. In: Proceedings of the 5th annual workshop on Semiconductors Advances for Future Electronics SAFE 2002, 27-28 November 2002, Veldhoven, The Netherlands (pp. pp. 69-74).

Nguyen, H. and Salm, C. and Vroemen, J. and Voets, J. and Krabbenborg, B.H. and Bisschop, J. and Mouthaan, A.J. and Kuper, F.G. (2002) Fast temperature cycling and electromigration induced thin film cracking multilevel interconnection: experiments and modeling. Microelectronics Reliability, 42 (9-11). pp. 1415-1420. ISSN 0026-2714

Nguyen, H. and Salm, C. and Vroemen, J. and Voets, J. and Krabbenborg, B.H. and Bisschop, J. and Mouthaan, A.J. and Kuper, F.G. (2002) Test chip for detecting thin film cracking induced by fast temperature cycling and electromigration in multilevel interconnect systems. In: 9th International Symposium on Physics and Failure Analysis 2002, 8-12 Jul 2002, Singapore, Thailand (pp. pp. 135-139).

Nguyen, H. and Salm, C. and Wenzel, R. and Mouthaan, A.J. and Kuper, F.G. (2002) Simulation and experimental characterization of reservoir and via layout effects on electromigration lifetime. Microelectronics Reliability, 42 (9-11). pp. 1421-1425. ISSN 0026-2714

Nguyen, H.V. and Salm, C. and Vroemen, J. and Voets, J. and Krabbenborg, B. and Bisschop, J. and Mouthaan, A.J. and Kuper, F.G. (2002) Test chip for Detecting Thin Film Cracking Induced by Fast Temperature Cycling and Electromigration in Multilevel Interconnect Systems. In: 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 8-12 July 2002 , Singapore, Thailand (pp. pp. 135-139).

Sowariraj, M.S.B. and Kuper, F.G. and Salm, C. and Mouthaan, A.J. and Smedes, T. (2002) Impact of layout and technology variation on the CDM performance of ggNMOSTs and SCRs. In: Proceedings of the 5th annual workshop on Semiconductors Advances for Future Electronics SAFE 2002, 27-28 November 2002, Veldhoven, The Netherlands (pp. pp. 104-107).

Sowariraj, M.S.B. and Salm, C. and Mouthaan, A.J. and Smedes, T. and Kuper, F.G. (2002) The influence of technology variation on ggNMOSTs and SCRs against CDM ESD stress. Microelectronics Reliability, 42 (9-11). pp. 1287-1292. ISSN 0026-2714

Wang, Z. and Scarpa, A. and Smits, S.M. and Kuper, F.G. and Salm, C. (2002) Temperature effect on protection diode for plasma-process induced charging damage. In: Proceedings of the 5th annual workshop on Semiconductors Advances for Future Electronics SAFE 2002, 27-28 November 2002, Veldhoven, The Netherlands (pp. pp. 127-130).

Wang, Zhichun and Ackaert, Jan and Salm, Cora and Backer, Eddy de and Bosch, Geert van den and Zawalski, Wade (2002) Correlation between Hot Carrier Stress, Oxide Breakdown and Gate Leakage Current for Monitoring Plasma Processing Induced Damage on Gate Oxide. In: 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits, 2002. IPFA, Singapore, Thailand, 8-12 July 2002, Singapore, Thailand (pp. pp. 242-245).

Wang, Zhichun and Scarpa, Andrea and Smits, Sander and Salm, Cora and Kuper, Fred (2002) Temperature Effect on Antenna Protection Strategy for Plasma-Process Induced Charging Damage. In: 7th International Symposium of Plasma Process-Induced Damage, June 6-7, 2002, Maui, Hawaii, USA (pp. pp. 134-137).

2001

Chen, X.Y. and Johansen, J.A. and Salm, C. and Rheenen, A.D. van (2001) On low-frequency noise of polycrystalline GexSi1-x for sub-micron CMOS technologies. Solid-State Electronics, 45 (11). pp. 1967-1971. ISSN 0038-1101

Kolhatkar, J.S. and Salm, C. and Wallinga, H. (2001) 1/f noise and switched bias noise measurement in p-MOSFET with varying gate oxide thickness. In: Proceedings of the 4th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2001, 28-30 Nov 2001, Veldhoven, The Netherlands (pp. pp. 92-95).

Kovalgin, Alexey and Holleman, Jisk and Salm, Cora and Woerlee, Pierre (2001) Low-Pressure CVD of Germanium-Silicon films using Silane and Germane sources. In: Thin Film Transistors Technologies V, 23-25 Oct 2000, Phoenix, Arizona, USA (pp. pp. 269-275).

Nguyen, H.V. and Salm, C. and Vroemen, J. and Voets, J. and Krabbenborg, B. and Bisschop, J. and Mouthaan, A.J. and Kuper, F.G. (2001) Fast thermal cycling stress and degredation in multilayer interconnects. In: 4th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE, 28-30 Nov 2001, Veldhoven, The Netherlands (pp. pp. 136-140).

Nguyen, Hieu V. and Salm, Cora and Mouthaan, Ton J. and Kuper, Fred G. (2001) Modeling of the Reservoir Effect on Electromigration Lifetime. In: 8th International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA, July 9-13, 2001, Singapore (pp. pp. 169-173).

Salm, Cora and Houtsma, Vincent and Kuper, Fred and Woerlee, Pierre (2001) Temperature acceleration of thin gate-oxide degradation. In: 4th annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001, 28-30 Nov 2001, Veldhoven, The Netherlands (pp. pp. 174-177).

Wang, Zhichun and Ackaert, Jan and Salm, Cora and Kuper, Fred (2001) Plasma process-induced latent damage on gate oxide-demonstrated by single-layer and multi-layer antenna structures. In: 8th International Symposium on the Physical & Failure Analysis of Integrated Circuits, IPFA, July 9-13, 2001, Singapore, Thailand (pp. pp. 220-223).

Wang, Zhichun and Ackaert, Jan and Salm, Cora and Kuper, Fred (2001) Charging induced damage on complex-antenna test structures. In: Proceedings of the 4th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2001, 29-30 Nov 2001, Veldhoven, The Netherlands (pp. pp. 220-223).

Wang, Zhichun and Scarpa, Andrea and Salm, Cora and Kuper, Fred (2001) Relation between Plasma Process-Induced Oxide Failure Fraction and Antenna Ratio. In: 6th International Symposium on Plasma Process-Induced Damage, May 14-15, 2001, Monterey, CA, USA (pp. pp. 16-19).

2000

Mouthaan, A.J. and Salm, C. and Lunenborg, M.M. and Wolf, M.A.R.C. de and Kuper, F.G. (2000) Dealing with hot-carrier aging in nMOS and DMOS, models, simulations and characterizations. Microelectronics Reliability, 40 (1). pp. 909-917. ISSN 0026-2714

Ponomarev, Youri V. and Stolk, Peter A. and Salm, Cora and Schmitz, Jurriaan and Woerlee, Pierre H. (2000) High-Performance Deep SubMicron CMOS Technologies with Polycrystalline-SiGe Gates. IEEE Transactions on Electron Devices, 47 (4). pp. 848-855. ISSN 0018-9383

1999

Chen, X.Y. and Salm, C. and Hooge, F.N. and Woerlee, P.H. (1999) 1/f noise in polycrystalline SiGe analyzed in terms of mobility fluctuations. Solid-State Electronics, 43 (9). pp. 1715-1724. ISSN 0038-1101

Houtsma, V.E. and Holleman, J. and Salm, C. and Haan, I.R. de and Schmitz, J. and Widdershoven, F.P. and Woerlee, P.H. (1999) Minority Carrier Tunneling and Stress-Induced Leakage Current for p+ gate MOS Capacitors with Poly-Si and PolySi0.7Ge0.3 Gate Material. In: International Electron Devices Meeting, 1999. IEDM Technical Digest, IEDM, Washington, USA (pp. pp. 457-460).

Houtsma, V.E. and Holleman, J. and Salm, C. and Widdershoven, F.P. and Woerlee, P.H. (1999) Stress-Induced Leakage Current in p+ Poly MOS Capacitors with Poly-Si and Poly-Si0.7Ge0.3 Gate Material. IEEE Electron Device Letters, 1999 (20). pp. 314-316. ISSN 0741-3106

Houtsma, V.E. and Holleman, J. and Salm, C. and Woerlee, P.H. (1999) SILC in MOS capacitors with poly-Si and poly-Si0.7Ge0.3 gate material. Microelectronic Engineering, 48 (1-4). pp. 415-418. ISSN 0167-9317

1998

Petrescu, V. and Mouthaan, A.J. and Schoenmaker, W. and Salm, C. (1998) Mechanical stress evolution and the blech length: 2D simulation of early electromigration effects. Microelectronics Reliability, 38 (6-8). pp. 1047-1050. ISSN 0026-2714

Salm, C. and Klootwijk, J.H. and Ponomarev, Y. and Boos, P.W.M. and Gravesteijn, D.J. and Woerlee, P.H. (1998) Gate Current and Oxide Reliability in p+ Poly MOS Capacitors with Poly-Si and Poly-Ge0.3 Si0.7 Gate Material. IEEE Electron Device Letters, 19 (7). pp. 213-215. ISSN 0741-3106

1997

Ponomarev, Y.V. and Salm, C. and Schmitz, J. and Woerlee, P.H. and Stolk, P.A. and Gravesteijn, D.J. (1997) Gate-Workfunction Engineering Using Poly-(Si,Ge) for High-Performance 0.18µm CMOS Technology. In: International Electron Devices Meeting, 1997. Technical Digest, Washington DC, USA (pp. pp. 829-832).

Salm, C. and Veen, D.T. and Gravesteijn, D.J. and Holleman, J. and Woerlee, P.H. (1997) Diffusion and electrical properties of Boron and Arsenic doped poly-Si and poly-$Ge_xSi_1-x(x~0.3)$ as gate material for sub-0.25 µm complementary metal oxide semiconductor applications. Journal of the Electrochemical Society, 144 (10). pp. 3665-3673. ISSN 0013-4651

This list was generated on Sat Nov 29 05:22:01 2014 CET.