Author Publications

Export as [feed] Atom [feed] RSS 1.0 [feed] RSS 2.0
Group by: Date | Item Type
Jump to: 2009 | 2008 | 2007 | 2006 | 2005 | 2004 | 2003 | 2002 | 2001 | 2000 | 1999 | 1998 | 1997 | 1994 | 1993 | 1991 | 1984 | 1974
Number of items: 102.

2009

Arguirov, T. and Mchedlidze, T. and Kittler, M. and Reiche, M. and Wilhelm, T. and Hoang, T. and Holleman, J. and Schmitz, J. (2009) Silicon based light emitters utilizing radiation from dislocations; electric field induced shift of the dislocation-related luminescence. Physica E: Low-dimensional Systems and Nanostructures, 41 (6). pp. 907-911. ISSN 1386-9477

Brunets, I. and Boogaard, A. and Smits, S.M. and Vries, H. de and Aarnink, A.A.I. and Holleman, J. and Kovalgin, A.Y. and Schmitz, J. (2009) Low temperature TFTs with poly-stripes. In: Proceedings of the 5th International Thin Film Transistor Conference ITC'09, 5-6 Mar 2009, Palaiseau, France (pp. pp. 62-65).

Brunets, I. and Holleman, J. and Kovalgin, A.Y. and Boogaard, A. and Schmitz, J. (2009) Low-temperature fabricated TFTs on polysilicon stripes. IEEE Transactions on Electron Devices, 56 (8). pp. 1637-1644. ISSN 0018-9383

Rangarajan, Balaji and Brunets, Ihor and Holleman, Jisk and Kovalgin, Alexey Y. and Schmitz, Jurriaan (2009) TFTs as photodetectors for optical interconnects. In: 12th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, 26-27 Nov 2009, Veldhoven, The Netherlands (pp. pp. 52-54).

2008

Boogaard, A. and Roesthuis, R. and Brunets, I. and Aarnink, A.A.I. and Kovalgin, A.Y. and Holleman, J. and Wolters, R.A.M. and Schmitz, J. (2008) Deposition of High-Quality SiO2 Insulating Films at Low Temperatures by means of Remote PECVD. In: Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008), 27-28 Nov 2008, Veldhoven, The Netherlands (pp. pp. 452-456).

Brunets, I. and Holleman, J. and Kovalgin, A.Y. and Schmitz, J. (2008) Poly-Si stripe TFTs by Grain-Boundary controlled crystallization of Amorphous-Si. In: Proceedings of the 38th European Solid-State Device Research Conference, 15-19 September 2008, Edinburgh, Schotland (pp. pp. 87-90).

Brunets, I. and Loon, R.V.A. van and Walters, R.J. and Polman, A. and Boogaard, A. and Aarnink, A.A.I. and Kovalgin, A.Y. and Wolters, R.A.M. and Holleman, J. and Schmitz, J. (2008) Light emission from silicon nanocrystals embedded in ALD-alumina at low temperatures. In: Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008), 27-28 Nov 2008, Veldhoven, The Netherlands (pp. pp. 399-402).

Hoang, T. and Holleman, J. and Schmitz, J. (2008) SOI LEDs with carrier confinement. In: Materials Science Forum. Trans Tech Publications, Switzerland, Stafa- Zurich, Switzerland, pp. 101-116. ISBN 9780878493586

Kovalgin, Alexey Y. and Isai, Gratiela and Holleman, Jisk and Schmitz, Jurriaan (2008) Low-Temperature SiO2 Layers Deposited by Combination of ECR Plasma and Supersonic Silane/Helium Jet. Journal of the Electrochemical Society, 155 (2). G21-G28. ISSN 0013-4651

Mchedlidze, T. and Arguirov, T. and Kittler, M. and Hoang, T. and Holleman, J. and Le Minh, P. and Schmitz, J. (2008) Engineering of dislocation-loops for light emission from silicon diodes. Solid State Phenomena, 131-13 . pp. 303-308. ISSN 1012-0394

Piccolo, G. and Hoang, T. and Holleman, J. and Kovalgin, A.Y. and Schmitz, J. (2008) Silicon LEDs with antifuse injection. In: 5th IEEE International Conference on Group IV Photonics, 2008, 17-19 Sept 2008, Sorrento, Italy (pp. pp. 49-51).

Piccolo, G. and Hoang, T. and Holleman, J. and Kovalgin, A.Y. and Schmitz, J. (2008) Antifuse injectors for SOI LEDs. In: Proceedings of the 11th annual workshop on semiconductor advances for future electronics and sensors (SAFE 2008), 27-28 Nov 2008, Veldhoven, The Netherlands (pp. pp. 573-575).

Schmitz, J. and Vries, R. de and Salm, C. and Hoang, T. and Hueting, R.J.E. and Holleman, J. (2008) On the switching speed of SOI LEDs. In: Proceedings of the Fourth Workshop of the Thematic Network on Silicon on Insulator Technology, Devices and Circuits, 23-25 Jan 2008, Cork, Ireland (pp. pp. 101-102).

2007

Boogaard, A. and Kovalgin, A.Y. and Brunets, I. and Aarnink, A.A.I. and Holleman, J. and Wolters, R.A.M. and Schmitz, J. (2007) Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD. Surface & Coatings Technology, 201 (22-23). pp. 8976-8980. ISSN 0257-8972

Boogaard, A. and Kovalgin, A.Y. and Brunets, I. and Aarnink, A.A.I. and Wolters, R.A.M. and Holleman, J. and Schmitz, J. (2007) On the verification of EEDFs in plasmas with silane using optical emission spectroscopy. ECS Transactions, 6 (1). pp. 259-270. ISSN 1938-5862

Boogaard, A. and Kovalgin, A.Y. and Brunets, I. and Holleman, J. and Schmitz, J. (2007) Optical and Electrical Characterization of SiO2 films deposited at low temperature by means of remote ICPECVD. In: Proceedings of the 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, 29 - 30 Nov 2007, Veldhoven, The Netherlands (pp. pp. 404-407).

Brunets, I. and Aarnink, A.A.I. and Boogaard, A. and Kovalgin, A.Y. and Wolters, R.A.M. and Holleman, J. and Schmitz, J. (2007) Low-temperature LPCVD of Si nanocrystals from disilane and trisilane (Silcore®) embedded in ALD-alumina for non-volatile memory devices. Surface & Coatings Technology, 201 . pp. 9209-9214. ISSN 0257-8972

Brunets, I. and Boogaard, A. and Aarnink, A.A.I. and Kovalgin, A.Y. and Wolters, R.A.M. and Holleman, J. and Schmitz, J. (2007) Low-temperature process steps for realization of non-volatile memory devices. In: 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE), 29-30 Nov 2007, Veldhoven, The Netherlands (pp. pp. 504-508).

Groenland, A.W. and Kovalgin, A.Y. and Holleman, J. and Schmitz, J. (2007) Simulation of a Nanolink Hot-Plate Device. In: 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE), 29-30 November 2007, Veldhoven, The Netherlands (pp. pp. 581-583).

Hoang, T. and Le Minh, P. and Holleman, J. and Schmitz, J. (2007) Strong efficiency improvement of SOI-LEDs through carrier confinement. IEEE electron device letters, 28 (5). pp. 383-385. ISSN 0741-3106

Hoang, Tu and Holleman, Jisk and Le Minh, Puong and Schmitz, Jurriaan and Mchedlidze, Teimuraz and Arguirov, Tzanimir and Kittler, Martin (2007) Influence of dislocation loops on the near infrared light emission from silicon diodes. IEEE Transactions on Electron Devices, 54 (8). pp. 1860-1866. ISSN 0018-9383

Kovalgin, A.Y. and Boogaard, A. and Brunets, I. and Holleman, J. and Schmitz, J. (2007) Chemical modeling of a high-density inductively-coupled plasma reactor containing silane. Surface & Coatings Technology, 201 . pp. 8849-8853. ISSN 0257-8972

Kovalgin, A.Y. and Holleman, J. and Iordache, G. (2007) A pillar-shaped antifuse-based silicon chemical sensor and actuator. IEEE sensors journal, 7 (1). pp. 18-27. ISSN 1530-437X

Mchedlidze, T. and Arguirov, T. and Kittler, M. and Hoang, T. and Holleman, J. and Schmitz, J. (2007) Influence of electric field on spectral positions of dislocation-related luminescence peaks in silicon: Stark effect. Applied physics letters, 91 (20). p. 201113. ISSN 0003-6951

Steen, J.-L.P.J. van der and Hueting, R.J.E. and Smit, G.D.J. and Hoang, T. and Holleman, J. and Schmitz, J. (2007) Valence Band Offset Measurements on Thin Silicon-on-Insulator MOSFETs. IEEE Electron Device Letters, 28 (9). pp. 821-824. ISSN 0741-3106

Steen, J.-L.P.J. van der and Hueting, R.J.E. and Smit, G.D.J. and Hoang, T. and Holleman, J. and Schmitz, J. (2007) Band Offset Measurements on Ultra-Thin (100) SOI MOSFETs. In: 10th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors (SAFE), 29-30 Nov 2007, Veldhoven, The Netherlands (pp. pp. 460-464).

2006

Bankras, R.G. and Holleman, J. and Schmitz, J. and Sturm, J.M. and Zinine, A. and Wormeester, H. and Poelsema, B. (2006) In Situ Reflective High-Energy Electron Diffraction Analysis During the Initial Stage of a Trimethylaluminum/Water ALD Process. Chemical Vapor Deposition, 12 (5). pp. 275-280. ISSN 0948-1907

Boogaard, A. and Kovalgin, A.Y. and Aarnink, A.A.I. and Wolters, R.A.M. and Holleman, J. and Brunets, I. and Schmitz, J. (2006) Measurement of electron temperatures of Argon Plasmas in a High-Density Inductively-Coupled Remote Plasma System by Langmuir Probe and Optical-Emission Spectroscopy. In: Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006, 23-24 Nov 2006, Veldhoven, The Netherlands (pp. pp. 412-418).

Boogaard, Arjen and Kovalgin, Alexey and Aarnink, Tom and Wolters, Rob and Holleman, Jisk and Brunets, Ihor and Schmitz, Jurriaan (2006) Langmuir-probe Characterization of an Inductively-Coupled Remote Plasma System intended for CVD and ALD. ECS Transactions, 2 (7). pp. 181-191. ISSN 1938-5862

Brunets, I. and Hemert, T. van and Boogaard, A. and Aarnink, A.A.I. and Kovalgin, A.Y. and Holleman, J. and Schmitz, J. (2006) Memory devices with encapsulated Si nano-crystals: Realization and Characterization. In: Proceedings of the 9th annual workshop on Semiconductor Advances for Future Electronics and Sensors 2006, 23-24 Nov 2006, Veldhoven, The Netherlands (pp. pp. 419-422).

Brunets, Ihor and Holleman, Jisk and Kovalgin, Alexey Y. and Aarnink, Tom and Boogaard, Arjen and Oesterlin, Peter (2006) Green Laser Crystallization of a-Si Films Using Preformed a-Si Lines. ECS Transactions, 3 (8). pp. 185-191. ISSN 1938-5862

Hoang, T. and LeMinh, P. and Hollleman, J. and Schmitz, J. (2006) The effect of dislocation loops on the light emission of silicon LEDs. IEEE Electron Device Letters, 27 (2). pp. 105-107. ISSN 0741-3106

Hoang, Tu and LeMinh, Phuong and Holleman, Jisk and Schmitz, Jurriaan (2006) Influence of Interface Recombination in Light Emission from Lateral Si-Based Light Emitting Devices. ECS Transactions, 3 (11). pp. 9-16. ISSN 1938-5862

Kovalgin, A.Y. and Holleman, J. and Iordache, G. and Jenneboer, A.J.S.M. and Falke, F. and Zieren, V. and Goossens, M.J. (2006) Low-power micro-scale CMOS-compatible silicon sensor on a suspended membrane. In: Microfabricated systems and MEMS VII: Proceedings of the 206th ECS Meeting, 2004, Honolulu, Hawaii (pp. pp. 173-183).

Kovalgin, A.Y. and Holleman, J. and Iordache, G. and Jenneboer, T. and Falke, F. and Zieren, V. and Goossens, M.J. (2006) Low-Power, Antifuse-Based Silicon Chemical Sensor on a Suspended Membrane. Journal of the Electrochemical Society, 153 (9). H181-H188. ISSN 0013-4651

Kovalgin, Alexey and Holleman, Jisk (2006) Low-Temperature LPCVD of Polycrystalline GexSi1-��x Films with High Germanium Content. Journal of the Electrochemical Society, 153 (5). G363-G371. ISSN 0013-4651

Le Minh, P. and Holleman, J. (2006) Silicon light-emitting diode antifuse: properties and devices. Journal of physics D: applied physics, 39 . pp. 3749-3754. ISSN 0022-3727

2005

Aarnink, A.A.I. and Boogaard, A. and Brunets, I. and Isai, I.G. and Kovalgin, A.Y. and Holleman, J. and Wolters, R.A.M. and Schmitz, J. (2005) A high-density inductively-coupled remote plasma system for the deposition of dielectrics and semiconductors. In: 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005 (SAFE 2005), 17-18 November 2005, Veldhoven, the Netherlands (pp. pp. 67-69).

Bankras, R.G. and Holleman, J. and Schmitz, J. (2005) In-Situ RHEED analysis of atomic layer deposition. In: 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005 (SAFE 2005), 17-18 November 2005, Veldhoven, The Netherlands (pp. pp. 70-75).

Brunets, I. and Boogaard, A. and Isai, I.G. and Aarnink, A.A.I. and Kovalgin, A.Y. and Holleman, J. and Schmitz, J. (2005) Three-dimensional IC's prolong the life of Moore's law. In: 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005 (SAFE 2005), 17-18 November 2005, Veldhoven, the Netherlands (pp. pp. 76-78).

Bystrova, S. and Aarnink, A.A.I. and Holleman, J. and Wolters, R.A.M. (2005) Atomic Layer Deposition of W1.5N Barrier Films for Cu Metallization: Process and Characterization. Journal of the Electrochemical Society, 152 (7). G522-G527. ISSN 0013-4651

Bystrova, S. and Holleman, J. and Aarnink, A.A.I. and Wolters, R.A.M. (2005) Barrier properties of ALD1,5N thin films. In: International Conference on Advanced Metallization, 19-21 October 2004, San Diego, California, USA (pp. pp. 769-774).

Hoang, T. and Le Minh, P. and Holleman, J. and Schmitz, J. (2005) The effect of dislocation loops on the light emission of silicon LEDs. In: Proceedings of 5th European Solid-State Device Research Conference (ESSDERC) 2005, 12-16 Sep 2005, Grenoble, France (pp. pp. 359-362).

Hoang, T. and LeMinh, P. and Holleman, J. and Schmitz, J. (2005) The effect of dislocation loops on the light emission of silicon LEDs. In: 35th European Solid-State Device Research Conference, ESSDERC, 12-16 Sept. 2005 , Grenoble, France (pp. pp. 359-362).

Kovalgin, A.Y. and Holleman, J. and Iordache, G. (2005) A Versatile Micro-Scale Silicon Sensor/Actuator with Low Power Consumption. In: IEEE Sensors, 2005, 30 Oct .- 3 Nov. 2005 , Irvine, CA, USA (pp. pp. 1225-1228).

Le Minh, P. and Hoang, T. and Holleman, J. and Schmitz, J. (2005) The effect of an electric field on a lateral silicon light-emitting diode. In: 8th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors 2005 (SAFE 2005), 17-18 November 2005, Veldhoven, The Netherlands (pp. pp. 117-120).

Sturm, J.M. and Zinine, A. and Wormeester, H. and Bankras, R.G. and Holleman, J. and Schmitz, J. and Poelsema, B. (2005) Laterally resolved electrical characterisation of high-L oxides with non-contact Atomic Force Microscopy. Microelectronic Engineering, 80 . pp. 78-81. ISSN 0167-9317

Sturm, J.M. and Zinine, A. and Wormeester, H. and Poelsema, B. and Bankras, R.G. and Holleman, J. and Schmitz, J. (2005) Imaging of oxide charges and contact potential difference fluctuations in Atomic Layer Deposited AL203 on Si. Journal of Applied Physics, 97 (6). 063709. ISSN 0021-8979

Sturm, J.M. and Zinine, A.I. and Wormeester, H. and Poelsema, B. and Bankras, R.G. and Holleman, J. and Schmitz, J. (2005) Nanoscale topography-capacitance correlation in high-K films: Interface heterogeneity related electrical properties. Journal of Applied Physics, 98 (7). 076104-1. ISSN 0021-8979

2004

Hoang, T. and LeMinh, P. and Holleman, J. and Schmitz, J. (2004) Effects of Dislocation Loops into Electroluminescence of Si-based Light Emitting Diodes. In: SAFE 2004, 7th Annual Workshop on Semiconductor Advances for Future Electronics, 25-26 Nov 2004, Veldhoven, the Netherlands (pp. pp. 697-699).

Hoang, T. and LeMinh, P. and Holleman, J. and Zieren, V. and Goossens, M.J. and Schmitz, J. (2004) A High Efficiency Lateral Light Emitting Device on SOI. In: 12th International Symposium on Electron Devices for Microwave and Optoelectronic Applications, EDMO, 8-9 November 2004, Berg-en-Dal, Kruger National Park, South Africa (pp. pp. 87-91).

Isai, Gratiela I. and Holleman, Jisk and Wallinga, Hans and Woerlee, Pierre H. (2004) Low Hydrogen Content Silicon Nitride Films Deposited at Room Temperature with an ECR Plasma Source. Journal of the Electrochemical Society, 151 (10). C649-C654. ISSN 0013-4651

Isai, Gratiela I. and Holleman, Jisk and Wallinga, Hans and Woerlee, Pierre H. (2004) Conduction and trapping mechanisms in SiO2 films grown near room temperature by multipolar electron cyclotron resonance plasma enhanced chemical vapor deposition. Journal of Vacuum Science & Technology B: Microelectronics and nanometer structures, 22 (3). pp. 1022-1029. ISSN 1071-1023

Kovalgin, A.Y. and Holleman, J. and Iordache, G. (2004) A micro-scale hot-surface device based on non-radiative carrier recombination. In: 34th European Solid-State Device Research Conference, ESSDERC, 21-23 September 2004, Leuven, Belgium (pp. pp. 353-356).

2003

Bankras, R.G. and Aarnink, A.A.I. and Holleman, J. and Schmitz, J. (2003) In-situ RHEED analysis of atomic layer deposition and characterization of AL203 gate dielectrics. In: 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003, 25-26 November 2003, Veldhoven, The Netherlands (pp. pp. 726-729).

Bystrova, S. and Holleman, J. and Wolters, R.A.M. and Aarnink, A.A.I. (2003) Atomic layer deposition of W - based layers on SiO2. In: 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003, 25-26 November 2003, Veldhoven, The Netherlands (pp. pp. 730-734).

Hoang, T. and Le Minh, P. and Holleman, J. and Schmitz, J. and Wallinga, H. (2003) High external quantum efficiency of the lateral P-I-N diodes realized of silicon on insulator (SOI) material. In: Proceedings of the 6th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2003, 25 - 26 November 2003, Veldhoven, The Netherlands (pp. pp. 610-613).

Iordache, G. and Holleman, J. and Kovalgin, A.Y. and Jenneboer, A.J.S.M. (2003) Antifuse nano-hot-spot device on a suspended membrane for gas sensing applications. In: Proceedings of the 6th annual workshop on Semiconductor Advances for Future Electronics and Sensors SAFE 2003, 25 - 26 November 2003, Veldhoven, The Netherlands (pp. pp. 693-696).

LeMinh, P. and Holleman, J. and Wallinga, H. and Berenschot, J.W. and Tas, N.R. and Berg, A. van den (2003) Novel integration of a microchannel with a silicon light emitting diode antifuse. Journal of Micromechanics and Microengineering, 13 (3). pp. 425-429. ISSN 0960-1317

2002

Bankras, R.G. and Holleman, J. and Woerlee, P.H. (2002) Characterization of pulsed laser deposited AL2O3 gate dielectric. In: 5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002, 27-28 November 2002, Veldhoven, The Netherlands (pp. pp. 1-4).

Bystrova, S. and Holleman, J. and Woerlee, P.H. and Wolters, R.A.M. (2002) Characterization of Ta-based barrier films on SiLK for Cu-metalization. In: 5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002, 27-28 November 2002, Veldhoven, The Netherlands (pp. pp. 9-13).

Isai, I.G. and Holleman, J. and Woerlee, P.H. and Wallinga, H. (2002) Silicon nitride layers obtained by ECR PECVD. In: 5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002, 27-28 November 2002, Veldhoven, The Netherlands (pp. pp. 39-41).

Kim, G.M. and Kovalgin, A.Y. and Holleman, J. and Brugger, J. (2002) Replication molds having nanometer-scale shape control fabricated by means of oxidation and etching. Journal of Nanoscience and Nanotechnology, 2 (1). pp. 55-59. ISSN 1533-4880

Kovalgin, A.Y. and Holleman, J. and Berg, A. van den (2002) Combined light/heat/gas sensors with decoupled electrical and thermal resistances. In: SeSens 2002, November 29-30, 2002, Veldhoven, The Netherlands (pp. pp. 635-648).

Kovalgin, A.Y. and Holleman, J. and Berg, A. van den (2002) A novel approach to low-power hot-surface devices with decoupled electrical and thermal resistances. In: Eurosensors XVI, European Conference on Solid-State Transducers, September 15-18, 2002, Prague, Czech Republic (pp. pp. 88-91).

LeMinh, P. and Holleman, J. and Wallinga, H. and Berg, A. van den (2002) Dislocation Loop Engineering Silicon Light emitting Diode. In: 1st International Conference on Materials Processing for Properties and Performance (MP3), August 1-3, 2002, Singapore, Thailand.

LeMinh, P. and Holleman, J. and Berenschot, J.W. and Tas, N.R. and Berg, A. van den (2002) Integration of a Novel Microfluidic Device with Silicon Light Emitting Diode-Antifuse and Photodetector. In: SeSens 2002, November 29-30, 2002, Veldhoven, The Netherlands (pp. pp. 644-648).

LeMinh, P. and Holleman, J. and Berenschot, J.W. and Tas, N.R. and Berg, A. van den (2002) Monolithic Integration of a Novel Microfluidic Device with Silicon Light Emitting Diode-Antifuse and Photodetector. In: 32nd European Solid-State Device Research Conference, ESSDERC, 24-26 September 2002, Firenze, Italy (pp. pp. 451-454).

2001

Bystrova, S. and Holleman, J. and Woerlee, P.H. (2001) Growth and properties of LPCVD W-Si-N barrier layers. Microelectronic Engineering, 55 (1-4). pp. 189-195. ISSN 0167-9317

Hof, A.J. and Holleman, J. and Woerlee, P.H. (2001) Gate current for p+-poly PMOS devices under gate injection conditions. In: 4th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001, 28-30 Nov 2001, Veldhoven, The Netherlands (pp. pp. 72-75).

Isai, Gratiela and Holleman, Jisk and Woerlee, Pierre and Wallinga, Hans (2001) Electronic conduction processes in SiO2 films obtained by ECR PECVD. In: 4th annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001, 28-30 Nov 2001, Veldhoven, The Netherlands (pp. pp. 76-81).

Kovalgin, A.Y. and Holleman, J. and Berg, A. van den and Wallinga, H. (2001) Thin-film Antifuses for Pellistor Type Gas Sensors. In: Semiconductor Sensor and Actuator Technology, SeSens, November 30, 2001, Veldhoven, The Netherlands (pp. pp. 809-812).

Kovalgin, A.Y. and Holleman, J. (2001) A study of morphology and texture of LPCVD germanium-silicon films. Journal de physique, IV . pp. 47-54. ISSN 1155-4339

Kovalgin, Alexey and Holleman, Jisk and Salm, Cora and Woerlee, Pierre (2001) Low-Pressure CVD of Germanium-Silicon films using Silane and Germane sources. In: Thin Film Transistors Technologies V, 23-25 Oct 2000, Phoenix, Arizona, USA (pp. pp. 269-275).

Le Minh, P. and Wallinga, H. and Woerlee, P.H. and Berg, A. van den and Holleman, J. (2001) Novel Technique for Reliability Testing of Silicon Integrated Circuits. In: In-line characterization, yield, reliability, and failure analysis in microelectronic manufacturing II, 31 May - 1 June 2001, Edinburgh, UK (pp. pp. 185-190).

LeMinh, P. and Holleman, J. and Wallinga, H. and Berg, A. van den (2001) Photochemical Reaction by Nanometer-scale Light Emitting Diode-Antifuses. In: Transducers '01-Eurosensors XV, June 10-14th 2001, Munich, Germany (pp. pp. 544-547).

2000

Akil, N. and Houtsma, V.E. and Le Minh, P. and Holleman, J. and Zieren, V. and Mooij, D. de and Woerlee, P.H. and Berg, A. van den and Wallinga, H. (2000) Modeling of Light Emission Spectra Measured on Silicon Nanometer-Scale Diode-Antifuses. Journal of Applied Physics, 88 (4). pp. 1916-1922. ISSN 0021-8979

Isai, G.I. and Kovalgin, A.Y. and Holleman, J. and Woerlee, P.H. and Wallinga, H. and Cobianu, C. (2000) Electrical Characterisation of Gate Dielectrics Deposited with Multipolar Electron Cyclotron Resonance Plasma Source. In: 30th European Solid State Device Research Conference, 11-13 September 2000, Cork, Ireland (pp. pp. 424-427).

Kovalgin, A.Y. and Akil, N.A. and Le Minh, P. and Holleman, J. and Berg, A. van den and Houtsma, V.E. and Wallinga, H. (2000) Nano-scale hotspots: a route to fast, real time and reliable gas sensing. In: SeSens workshop on Semiconductor Sensor and Actuator Technology, Nov. 30 - Dec. 1, 2000, Veldhoven, The Netherlands (pp. pp. 651-654).

Le Minh, P. and Akil, N.A. and Wallinga, H. and Woerlee, P.H. and Berg, A. van den and Holleman, J. (2000) New Efficient CMOS-Compatible Electro-Optical Device. In: SAFE 2000, Nov. 29-30, 2000, Veldhoven, The Netherlands (pp. pp. 93-95).

LeMinh, P. and Akil, N. and Wallinga, H. and Woerlee, P.H. and Berg, A. van den and Holleman, J. (2000) A Novel Silicon Electro-Optic Device for sensor applications. In: IEEE 13th Annual Meeting Lasers and Electro-Optics Society, LEOS 2000, 13-16 November 2000, Rio Grande, Puerto Rico (pp. pp. 523-524).

LeMinh, P. and Holleman, J. and Wallinga, H. (2000) Highly Efficient Silicon Light Emitting Diode. In: SAFE 2002, 5th Annual Workshop on Semiconductor Advances for Future Electronics, November 27-28, 2002, Veldhoven, the Netherlands (pp. pp. 46-50).

1999

Houtsma, V.E. and Holleman, J. and Akil, N.A. and Le Minh, P. and Zieren, V. and Berg, A. van den and Wallinga, H. and Woerlee, P.H. (1999) Visible light emission from reverse-biased silicon nanometer-scale diode-antifuses. In: International Semiconductor Conference, CAS 1999, 5-9 October 1999, Sinaia, Romania (pp. pp. 461-465).

Houtsma, V.E. and Holleman, J. and Salm, C. and Haan, I.R. de and Schmitz, J. and Widdershoven, F.P. and Woerlee, P.H. (1999) Minority Carrier Tunneling and Stress-Induced Leakage Current for p+ gate MOS Capacitors with Poly-Si and PolySi0.7Ge0.3 Gate Material. In: International Electron Devices Meeting, 1999. IEDM Technical Digest, IEDM, Washington, USA (pp. pp. 457-460).

Houtsma, V.E. and Holleman, J. and Salm, C. and Widdershoven, F.P. and Woerlee, P.H. (1999) Stress-Induced Leakage Current in p+ Poly MOS Capacitors with Poly-Si and Poly-Si0.7Ge0.3 Gate Material. IEEE Electron Device Letters, 1999 (20). pp. 314-316. ISSN 0741-3106

Houtsma, V.E. and Holleman, J. and Salm, C. and Woerlee, P.H. (1999) SILC in MOS capacitors with poly-Si and poly-Si0.7Ge0.3 gate material. Microelectronic Engineering, 48 (1-4). pp. 415-418. ISSN 0167-9317

Le Minh, P. and Akil, N.A. and Houtsma, V.E. and Woerlee, P.H. and Wallinga, H. and Berg, A. van den and Holleman, J. (1999) Light Emission Spectra as Experimental Evidence for the Morphology of Silicon-based Antifuse Diode Structure. In: SAFE'99, Annual Workshop on Semiconductor Advances for Future Electronics, Nov. 24-25, 1999, Mierlo, The Netherlands (pp. pp. 265-268).

Le Minh, P. and Dao Khac An, and Nguyen Duc Chien, and Holleman, J. and Berg, A. van den and Woerlee, P.H. and Wallinga, H. (1999) New Phenomenon of Slow Boron Diffusion from Spin-on-Dopant Source. In: Third International Workshop on Materials Science, IWOMS 1999, 2-4 November 1999, Hanoi, Vietnam (pp. pp. 517-520).

1998

Cobianu, C. and Savaniu, C. and Dumitrescu, M. and Iorgulescu, R. and Arnautu, A. and Barsony, I. and Pecz, B. and Ducso, C.S. and Szilagyi, E. and Paszti, F. and Niinisto, L. and Utriaino, M. and Kolev, S.D. and Berg, A. van den and Holleman, J. and Wallinga, H. (1998) Sn02 sol-gel derived thin layers for gas sensing applications. In: 5th NEXUSPAN Workshop on Thermal Aspects in Microsystem Technology, 6-8 May 1998, Budapest, Hungary (pp. pp. 82-87).

1997

Rem, J.B. and Holleman, J. and Verweij, J.F. (1997) Incubation Time Measurements in Thin-Film Deposition. Journal of the Electrochemical Society, 144 (6). pp. 2101-2106. ISSN 0013-4651

Rem, J.B. and Leuw, M.C.V. de and Holleman, J. and Verweij, J.F. (1997) Furnace and rapid thermal crystallization of amorphous GexSi1-x and Si for thin film transistors. Thin Solid Films, 296 (1-2). pp. 152-156. ISSN 0040-6090

Salm, C. and Veen, D.T. and Gravesteijn, D.J. and Holleman, J. and Woerlee, P.H. (1997) Diffusion and Electrical Properties of Boron and Arsenic Doped Poly-Si and Poly-GexSi1�x (x ~ 0.3) as Gate Material for Sub-0.25 µm Complementary Metal Oxide Semiconductor Applications. Journal of the Electrochemical Society, 144 (10). pp. 3665-3673. ISSN 0013-4651

1994

Zhou, M.-J. and Holleman, J. and Wallinga, H. (1994) Elimination or Minimisation of Optoelectronic Crosstalk between Photodiodes and Electronic Device in OEIC on Si. Electronics Letters, 30 (11). pp. 895-897. ISSN 0013-5194

1993

Holleman, J. and Kuiper, A.E.T. and Verweij, J.F. (1993) Kinetics of the Low Pressure Chemical Vapor Deposition of Polycrystalline Germanium-Silicon Alloys from SiH4 and GeH4. Journal of the Electrochemical Society, 140 (6). pp. 1717-1722. ISSN 0013-4651

Holleman, Jisk and Hasper, Albert and Kleijn, Chris R. (1993) Loading Effects on Kinetical and Electrical Aspects of Silane-Reduced Low-Pressure Chemical Vapor Deposited Selective Tungsten. Journal of the Electrochemical Society, 140 (3). pp. 818-825. ISSN 0013-4651

Holleman, Jisk and Verweij, Jan F. (1993) Extraction of Kinetic Parameters for the Chemical Vapor Deposition of Polycrystalline Silicon at Medium and Low Pressures. Journal of the Electrochemical Society, 140 (7). pp. 2089-2097. ISSN 0013-4651

1991

Hasper, A. and Holleman, J. and Middelhoek, J. and Kleijn, C.R. and Hoogendoorn, C.J. (1991) Modeling and Optimization of the Step Coverage of Tungsten LPCVD in Trenches and Contact Holes. Journal of the Electrochemical Society, 138 (6). pp. 1728-1738. ISSN 0013-4651

Holleman, J. and Hasper, A. and Middelhoek, J. (1991) A Reflectometric Study of the Reaction between Si and WF6 during W-LPCVD on Si and of the Renucleation during the H2 Reduction of WF6. Journal of the Electrochemical Society, 138 (3). pp. 783-788. ISSN 0013-4651

Holleman, J. and Hasper, A. and Middelhoek, J. (1991) In Situ Growth Rate Measurement of Selective LPCVD of Tungsten. Journal of the Electrochemical Society, 138 (4). pp. 989-993. ISSN 0013-4651

Kleijn, C.R. and Hoogendoorn, C.J. and Hasper, A. and Holleman, J. and Middelhoek, J. (1991) Transport Phenomena in Tungsten LPCVD in a Single-Wafer Reactor. Journal of the Electrochemical Society, 138 (2). pp. 509-517. ISSN 0013-4651

1984

Holleman, Jisk and Middelhoek, Jan (1984) Low pressure chemical vapour deposition at quasi-high flow. Thin Solid Films, 114 (3). pp. 295-309. ISSN 0040-6090

1974

Middelhoek, J. and Holleman, J. (1974) Low Phosphorus Concentrations in Si by Diffusion from Doped Oxide Layers. Journal of the Electrochemical Society, 121 (1). pp. 132-137. ISSN 0013-4651

This list was generated on Wed Oct 22 05:15:58 2014 CEST.