Author Publications

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Jump to: 1994 | 1992 | 1990
Number of items: 6.

1994

Liefting, J.R. and Custer, J.S. and Saris, F.W. (1994) Time evolution of dislocation formation in ion implanted silicon. Materials Science and Engineering B: Solid-state materials for advanced technology, 25 (1). pp. 60-67. ISSN 0921-5107

Liefting, Reinoud and Wijburg, Rutger C. and Custer, Jonathan S. and Wallinga, Hans and Saris, Frans W. (1994) Improved device performance by multistep or carbon co-implants. IEEE Transactions on Electron Devices, 41 (1). pp. 50-55. ISSN 0018-9383

1992

Liefting, J.R. and Custer, J.S. and Schreutelkamp, R.J. and Saris, F.W. (1992) Dislocation formation in silicon implanted at different temperatures. Materials Science and Engineering B: Solid-state materials for advanced technology, 15 (2). pp. 173-186. ISSN 0921-5107

Saris, F.W. and Custer, J.S. and Schreutelkamp, R.J. and Liefting, J.R. and Wijburg, R. and Wallinga, H. (1992) Avoiding dislocations in ion-implanted silicon. Microelectronic Engineering, 19 (1-4). pp. 357-362. ISSN 0167-9317

Wijburg, R.C.M. and Liefting, J.R. and Custer, J.S. and Wallinga, H. and Saris, F.W. (1992) Improvement of device characteristics by multiple step implants or introducing a C gettering layer. Microelectronic Engineering, 19 (1-4). pp. 543-546. ISSN 0167-9317

1990

Reus, R. de and Saris, F.W. and Kolk, G.J. van der and Witmer, C. and Dam, B. and Blank, D.H.A. and Adelerhof, D.J. and Flokstra, J. (1990) Buffer layers for superconducting YBaCuO thin films on Si and SiO2. Materials Science and Engineering B: Solid-state materials for advanced technology, 7 (1-2). pp. 135-147. ISSN 0921-5107

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