Author Publications

1988

Oosterhoff, S. (1988) Distributions of boron and phosphorus implanted in silicon in the energy range 0.1–1.5 MeV. Nuclear Instruments and Methods in Physics Research. Section B: Beam interactions with materials and atoms, 30 (1). pp. 1-12. ISSN 0168-583X

1986

Vos, M. and Boerma, D.O. and Smulders, P.J.M. and Oosterhoff, S. (1986) Defect and dopant depth profiles in boron-implanted silicon studied with channeling and nuclear reaction analysis. Nuclear Instruments and Methods in Physics Research. Section B: Beam interactions with materials and atoms, 17 (3). pp. 234-241. ISSN 0168-583X

1985

Oosterhoff, S. and Middelhoek, J. (1985) The annealing of 1 MeV implantations of boron in silicon. Solid-State Electronics, 28 (5). pp. 427-433. ISSN 0038-1101