Author Publications

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Jump to: 1991 | 1990 | 1989 | 1988 | 1985 | 1984 | 1974
Number of items: 16.

1991

Aïte, K. and Hári, P. and Bijker, W. and Middelhoek, J. (1991) Simulation, design and fabrication of large area implanted silicon two-dimensional position sensitive radiation detectors. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 305 (3). pp. 533-540. ISSN 0168-9002

Hasper, A. and Holleman, J. and Middelhoek, J. and Kleijn, C.R. and Hoogendoorn, C.J. (1991) Modeling and Optimization of the Step Coverage of Tungsten LPCVD in Trenches and Contact Holes. Journal of the Electrochemical Society, 138 (6). pp. 1728-1738. ISSN 0013-4651

Holleman, J. and Hasper, A. and Middelhoek, J. (1991) A Reflectometric Study of the Reaction between Si and WF6 during W-LPCVD on Si and of the Renucleation during the H2 Reduction of WF6. Journal of the Electrochemical Society, 138 (3). pp. 783-788. ISSN 0013-4651

Holleman, J. and Hasper, A. and Middelhoek, J. (1991) In Situ Growth Rate Measurement of Selective LPCVD of Tungsten. Journal of the Electrochemical Society, 138 (4). pp. 989-993. ISSN 0013-4651

Kleijn, C.R. and Hoogendoorn, C.J. and Hasper, A. and Holleman, J. and Middelhoek, J. (1991) Transport Phenomena in Tungsten LPCVD in a Single-Wafer Reactor. Journal of the Electrochemical Society, 138 (2). pp. 509-517. ISSN 0013-4651

Wijburg, Rutger C. and Hemink, Gertjan J. and Middelhoek, Jan and Wallinga, Hans and Mouthaan, Ton J. (1991) VIPMOS-A novel buried injector structure for EPROM applications. IEEE Transactions on Electron Devices, 38 (1). pp. 111-120. ISSN 0018-9383

1990

Wijburg, Rutger C. and Hemink, Gertjan J. and Middelhoek, Jan (1990) Strongly asymmetric doping profiles at mask edges in high energy ion implantation. IEEE Transactions on Electron Devices, 37 (1). pp. 79-87. ISSN 0018-9383

Wolbert, Ph. and Schie, E. van and Wijburg, R.C.M. and Hemink, G. and Middelhoek, J. (1990) Simulation of a novel EPROM structure using the energy-balance equations. In: Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits, NUPAD III, June 3-4, 1990, Honolulu, Hawaii (pp. pp. 51-52).

1989

Gao, J.R. and Caro, J. and Verbruggen, A.H. and Radelaar, S. and Middelhoek, J. (1989) Narrow channel Si-MOSFETs for electron transport studies. Microelectronic Engineering, 9 (1-4). pp. 373-376. ISSN 0167-9317

Middelhoek, J. (1989) High energy implanted transistor fabrication. Materials Science and Engineering B: Solid-state materials for advanced technology, 2 (1-3). ISSN 0921-5107

Schie, Eddie van and Middelhoek, Jan (1989) Two methods to improve the performance of Monte Carlo simulations of ion implantation in amorphous targets. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 8 (2). pp. 108-113. ISSN 0278-0070

Schie, Eddie van and Middelhoek, Jan and Zalm, Peer C. (1989) Determination of 2D implanted ion distributions using inverse radon transform methods. Nuclear Instruments and Methods in Physics Research. Section B: Beam interactions with materials and atoms, 42 (1). pp. 109-121. ISSN 0168-583X

1988

Hendriks, E.A. and Zijlstra, R.J.J. and Middelhoek, J. (1988) Current noise in (111) n-channel Si-MOSFET's at T = 4.2 K. Physica B+C, 147 (2-3). pp. 297-304. ISSN 0378-4363

1985

Oosterhoff, S. and Middelhoek, J. (1985) The annealing of 1 MeV implantations of boron in silicon. Solid-State Electronics, 28 (5). pp. 427-433. ISSN 0038-1101

1984

Holleman, Jisk and Middelhoek, Jan (1984) Low pressure chemical vapour deposition at quasi-high flow. Thin Solid Films, 114 (3). pp. 295-309. ISSN 0040-6090

1974

Middelhoek, J. and Holleman, J. (1974) Low Phosphorus Concentrations in Si by Diffusion from Doped Oxide Layers. Journal of the Electrochemical Society, 121 (1). pp. 132-137. ISSN 0013-4651

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