Author Publications

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Number of items: 43.

Article

Akil, N. and Houtsma, V.E. and Le Minh, P. and Holleman, J. and Zieren, V. and Mooij, D. de and Woerlee, P.H. and Berg, A. van den and Wallinga, H. (2000) Modeling of Light Emission Spectra Measured on Silicon Nanometer-Scale Diode-Antifuses. Journal of Applied Physics, 88 (4). pp. 1916-1922. ISSN 0021-8979

Bearda, T. and Woerlee, P.H. and Wallinga, H. and Heyns, M.M. (2002) Charge transport after hard breakdown in gate oxides. Japanese Journal of Applied Physics, Part 1: Regular papers, brief communications, and review papers, 41 (4B). pp. 2431-2436. ISSN 0021-4922

Bearda, Twan and Mertens, Paul W. and Heyns, Marc M. and Wallinga, Hans and Woerlee, Pierre (2000) Breakdown and Recovery of Thin Gate Oxides. Japanese Journal of Applied Physics, Part 2: Letters, 39 (6b). L582-L584. ISSN 0021-4922

Bystrova, S. and Holleman, J. and Woerlee, P.H. (2001) Growth and properties of LPCVD W-Si-N barrier layers. Microelectronic Engineering, 55 (1-4). pp. 189-195. ISSN 0167-9317

Chen, X.Y. and Salm, C. and Hooge, F.N. and Woerlee, P.H. (1999) 1/f noise in polycrystalline SiGe analyzed in terms of mobility fluctuations. Solid-State Electronics, 43 (9). pp. 1715-1724. ISSN 0038-1101

Hof, A.J. and Kovalgin, A.Y. and Woerlee, P.H. and Schmitz, J. (2005) On the Oxidation Kinetics of Silicon in Ultradiluted H2O and D2O Ambient. Journal of the Electrochemical Society, 152 (9). F133-F137. ISSN 0013-4651

Houtsma, V.E. and Holleman, J. and Salm, C. and Widdershoven, F.P. and Woerlee, P.H. (1999) Stress-Induced Leakage Current in p+ Poly MOS Capacitors with Poly-Si and Poly-Si0.7Ge0.3 Gate Material. IEEE Electron Device Letters, 1999 (20). pp. 314-316. ISSN 0741-3106

Houtsma, V.E. and Holleman, J. and Salm, C. and Woerlee, P.H. (1999) SILC in MOS capacitors with poly-Si and poly-Si0.7Ge0.3 gate material. Microelectronic Engineering, 48 (1-4). pp. 415-418. ISSN 0167-9317

Isai, Gratiela I. and Holleman, Jisk and Wallinga, Hans and Woerlee, Pierre H. (2004) Low Hydrogen Content Silicon Nitride Films Deposited at Room Temperature with an ECR Plasma Source. Journal of the Electrochemical Society, 151 (10). C649-C654. ISSN 0013-4651

Isai, Gratiela I. and Holleman, Jisk and Wallinga, Hans and Woerlee, Pierre H. (2004) Conduction and trapping mechanisms in SiO2 films grown near room temperature by multipolar electron cyclotron resonance plasma enhanced chemical vapor deposition. Journal of Vacuum Science & Technology B: Microelectronics and nanometer structures, 22 (3). pp. 1022-1029. ISSN 1071-1023

Klootwijk, J.H. and Kranenburg, H. van and Weusthof, M.H.H. and Woerlee, P.H. and Wallinga, H. (1998) RTP annealings for high-quality LPCVD interpolysilicon dielectric layers. Microelectronics Reliability, 38 (2). pp. 277-280. ISSN 0026-2714

Klootwijk, J.H. and Weusthof, M.H.H. and Kranenburg, H. van and Woerlee, P.H. and Wallinga, H. (1996) Improvements of deposited interpolysilicon dielectric characteristics with RTP N2O-anneal. IEEE Electron Device Letters, 17 (7). pp. 358-359. ISSN 0741-3106

Klootwijk, Johan H. and Kranenburg, Herma van and Woerlee, Pierre H. and Wallinga, Hans (1999) Deposited Inter-Polysilicon Dielectrics for Nonvolatile Memories. IEEE Transactions on Electron Devices, 1999 (7). pp. 1435-1445. ISSN 0018-9383

Kranenburg, H. van and Woerlee, P.H. (1998) Influence of Overpolish Time on the Performance of W Damascene Technology. Journal of the Electrochemical Society, 145 (4). pp. 1285-1291. ISSN 0013-4651

Kranenburg, Herma van and Corbach, Herman D. van and Woerlee, Pierre H. and Lohmeier, Martin (1997) W-CMP for sub-micron inverse metallisation. Microelectronic Engineering, 33 (1-4). pp. 239-246. ISSN 0167-9317

Mannino, G. and Stolk, P.A. and Cowern, N.E.B. and Boer, W. de and Dirks, A.G. and Roozeboom, F. and Berkum, J.G.M. van and Woerlee, P.H. and Toan, N.N. (2001) Effect of heating ramp rates on transient enhanced diffusion in ion-implemented silicon. Applied Physics Letters, 78 (7). pp. 889-891. ISSN 0003-6951

Nguyen, V. and Kranenburg, H. van and Woerlee, P. (2000) Dependency of dishing on polish time and slurry chemistry in Cu CMP. Microelectronic Engineering, 50 (1-4). pp. 403-410. ISSN 0167-9317

Nguyen, V.H. and Hof, A.J. and Kranenburg, H. van and Woerlee, P.H. and Weimar, F. (2001) Copper chemical mechanical polishing using a slurry-free technique. Microelectronic Engineering, 55 (1-4). pp. 305-312. ISSN 0167-9317

Nguyen, Viet H. and Daamen, Roel and Kranenburg, Herma van and Velden, Peter van der and Woerlee, Pierre H. (2003) A Physical Model for Dishing during Metal CMP. Journal of the Electrochemical Society, 150 (11). G689-G693. ISSN 0013-4651

Ponomarev, Youri V. and Stolk, Peter A. and Salm, Cora and Schmitz, Jurriaan and Woerlee, Pierre H. (2000) High-Performance Deep SubMicron CMOS Technologies with Polycrystalline-SiGe Gates. IEEE Transactions on Electron Devices, 47 (4). pp. 848-855. ISSN 0018-9383

Salm, C. and Klootwijk, J.H. and Ponomarev, Y. and Boos, P.W.M. and Gravesteijn, D.J. and Woerlee, P.H. (1998) Gate Current and Oxide Reliability in p+ Poly MOS Capacitors with Poly-Si and Poly-Ge0.3 Si0.7 Gate Material. IEEE Electron Device Letters, 19 (7). pp. 213-215. ISSN 0741-3106

Salm, C. and Veen, D.T. and Gravesteijn, D.J. and Holleman, J. and Woerlee, P.H. (1997) Diffusion and electrical properties of Boron and Arsenic doped poly-Si and poly-$Ge_xSi_1-x(x~0.3)$ as gate material for sub-0.25 µm complementary metal oxide semiconductor applications. Journal of the Electrochemical Society, 144 (10). pp. 3665-3673. ISSN 0013-4651

Conference or Workshop Item

Bankras, R.G. and Holleman, J. and Woerlee, P.H. (2002) Characterization of pulsed laser deposited AL2O3 gate dielectric. In: 5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002, 27-28 November 2002, Veldhoven, The Netherlands (pp. pp. 1-4).

Bearda, Twan and Mertens, Paul W. and Heyns, Marc M. and Woerlee, Pierre and Wallinga, Hans (2000) Breakdown and recovery of thin gate oxides. In: 30th European Solid-State Device research Conference, 11-13 September 2000, Cork, Ireland (pp. pp. 116-119).

Bystrova, S. and Holleman, J. and Woerlee, P.H. and Wolters, R.A.M. (2002) Characterization of Ta-based barrier films on SiLK for Cu-metalization. In: 5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002, 27-28 November 2002, Veldhoven, The Netherlands (pp. pp. 9-13).

Hof, A.J. and Holleman, J. and Woerlee, P.H. (2001) Gate current for p+-poly PMOS devices under gate injection conditions. In: 4th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001, 28-30 Nov 2001, Veldhoven, The Netherlands (pp. pp. 72-75).

Hof, A.J. and Kovalgin, A.Y. and Woerlee, P.H. (2002) Comparison of H2O and D2O oxidation kinetics of <100> silicon. In: 5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002, 27-28 November 2002, Veldhoven, The Netherlands (pp. pp. 35-38).

Hof, A.J. and Kovalgin, A.Y. and Woerlee, P.H. and Schmitz, J. (2003) On oxidation kinetics and electrical quality of gate oxide grown in H2O or D2O ambient. In: 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003, 25-26 November 2003, Veldhoven, The Netherlands (pp. pp. 743-747).

Houtsma, V.E. and Holleman, J. and Akil, N.A. and Le Minh, P. and Zieren, V. and Berg, A. van den and Wallinga, H. and Woerlee, P.H. (1999) Visible light emission from reverse-biased silicon nanometer-scale diode-antifuses. In: International Semiconductor Conference, CAS 1999, 5-9 October 1999, Sinaia, Romania (pp. pp. 461-465).

Houtsma, V.E. and Holleman, J. and Salm, C. and Haan, I.R. de and Schmitz, J. and Widdershoven, F.P. and Woerlee, P.H. (1999) Minority Carrier Tunneling and Stress-Induced Leakage Current for p+ gate MOS Capacitors with Poly-Si and PolySi0.7Ge0.3 Gate Material. In: International Electron Devices Meeting, 1999. IEDM Technical Digest, IEDM, Washington, USA (pp. pp. 457-460).

Isai, G.I. and Kovalgin, A.Y. and Holleman, J. and Woerlee, P.H. and Wallinga, H. and Cobianu, C. (2000) Electrical Characterisation of Gate Dielectrics Deposited with Multipolar Electron Cyclotron Resonance Plasma Source. In: 30th European Solid State Device Research Conference, 11-13 September 2000, Cork, Ireland (pp. pp. 424-427).

Isai, Gratiela and Holleman, Jisk and Woerlee, Pierre and Wallinga, Hans (2001) Electronic conduction processes in SiO2 films obtained by ECR PECVD. In: 4th annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001, 28-30 Nov 2001, Veldhoven, The Netherlands (pp. pp. 76-81).

Isai, I.G. and Holleman, J. and Woerlee, P.H. and Wallinga, H. (2002) Silicon nitride layers obtained by ECR PECVD. In: 5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002, 27-28 November 2002, Veldhoven, The Netherlands (pp. pp. 39-41).

Kovalgin, Alexey and Holleman, Jisk and Salm, Cora and Woerlee, Pierre (2001) Low-Pressure CVD of Germanium-Silicon films using Silane and Germane sources. In: Thin Film Transistors Technologies V, 23-25 Oct 2000, Phoenix, Arizona, USA (pp. pp. 269-275).

Le Minh, P. and Akil, N.A. and Houtsma, V.E. and Woerlee, P.H. and Wallinga, H. and Berg, A. van den and Holleman, J. (1999) Light Emission Spectra as Experimental Evidence for the Morphology of Silicon-based Antifuse Diode Structure. In: SAFE'99, Annual Workshop on Semiconductor Advances for Future Electronics, Nov. 24-25, 1999, Mierlo, The Netherlands (pp. pp. 265-268).

Le Minh, P. and Akil, N.A. and Wallinga, H. and Woerlee, P.H. and Berg, A. van den and Holleman, J. (2000) New Efficient CMOS-Compatible Electro-Optical Device. In: SAFE 2000, Nov. 29-30, 2000, Veldhoven, The Netherlands (pp. pp. 93-95).

Le Minh, P. and Dao Khac An, and Nguyen Duc Chien, and Holleman, J. and Berg, A. van den and Woerlee, P.H. and Wallinga, H. (1999) New Phenomenon of Slow Boron Diffusion from Spin-on-Dopant Source. In: Third International Workshop on Materials Science, IWOMS 1999, 2-4 November 1999, Hanoi, Vietnam (pp. pp. 517-520).

Le Minh, P. and Wallinga, H. and Woerlee, P.H. and Berg, A. van den and Holleman, J. (2001) Novel Technique for Reliability Testing of Silicon Integrated Circuits. In: In-line characterization, yield, reliability, and failure analysis in microelectronic manufacturing II, 31 May - 1 June 2001, Edinburgh, UK (pp. pp. 185-190).

LeMinh, P. and Akil, N. and Wallinga, H. and Woerlee, P.H. and Berg, A. van den and Holleman, J. (2000) A Novel Silicon Electro-Optic Device for sensor applications. In: IEEE 13th Annual Meeting Lasers and Electro-Optics Society, LEOS 2000, 13-16 November 2000, Rio Grande, Puerto Rico (pp. pp. 523-524).

Nguyen, Viet H. and Velden, Peter van der and Daamen, Roel and Kranenburg, Herma van and Woerlee, Pierre H. (2000) Modelling of dishing for metal chemical mechanical polishing. In: International Electron Devices Meeting, 2000. IEDM Technical Digest, December 11 to 13, 2000, San Francisco, USA (pp. pp. 499-502).

Nguyen Hoang, V. and Timmer, B. and Kranenburg, H. van and Woerlee, P.H. (1999) Time Dependency of the Planarization Process in Copper Chemical Mechanical Polishing. In: 29th European Solid-State Device Research Conference, ESSDERC, September 13-15, 1999, Leuven, Belgium (pp. pp. 260-263).

Ponomarev, Y.V. and Salm, C. and Schmitz, J. and Woerlee, P.H. and Stolk, P.A. and Gravesteijn, D.J. (1997) Gate-Workfunction Engineering Using Poly-(Si,Ge) for High-Performance 0.18µm CMOS Technology. In: International Electron Devices Meeting, 1997. Technical Digest, Washington DC, USA (pp. pp. 829-832).

Salm, Cora and Houtsma, Vincent and Kuper, Fred and Woerlee, Pierre (2001) Temperature acceleration of thin gate-oxide degradation. In: 4th annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001, 28-30 Nov 2001, Veldhoven, The Netherlands (pp. pp. 174-177).

This list was generated on Mon Dec 22 05:45:01 2014 CET.