Author Publications

1999

Wolters, D.R. and Verweij, J.F. and Zegers-van Duijnhoven, A.T.A. (1999) Dielectric breakdown in SiO2: A survey of test methods. In: New Insulators, Devices and Radiation Effects. Instabilities in Silicon Devices, 3 . Elsevier, pp. 233-263. ISBN 9780444818010

1997

Rem, J.B. and Holleman, J. and Verweij, J.F. (1997) Incubation Time Measurements in Thin-Film Deposition. Journal of the Electrochemical Society, 144 (6). pp. 2101-2106. ISSN 0013-4651

Rem, J.B. and Leuw de, M.C.V. and Holleman, J. and Verweij, J.F. (1997) Furnace and rapid thermal crystallization of amorphous GexSi1-x and Si for thin film transistors. Thin Solid Films, 296 (1-2). pp. 152-156. ISSN 0040-6090

1996

Bijlsma, Sipke J. and Kranenburg van, Herma and Nieuwesteeg, K.J.B.M. and Pitt, Michael G. and Verweij, Jan F. (1996) Electrical breakdown of amorphous hydrogenated silicon rich silicon nitride thin film diodes. IEEE Transactions on Electron Devices, 43 (9). pp. 1592-1601. ISSN 0018-9383

Klootwijk, J.H. and Verweij, J.F. and Rem, J.B. and Bijlsma, S. (1996) Dielectric breakdown II: Related projects at the University of Twente. Microelectronics Journal, 27 (7). pp. 623-632. ISSN 0026-2692

Lunenborg, M.M. and Graaff de, H.C. and Mouthaan, A.J. and Verweij, J.F. (1996) Comprehensive physical modeling of NMOSFET hot-carrier-induced degradation. Microelectronics Reliability, 36 (11/12). pp. 1667-1670. ISSN 0026-2714

Verweij, J.F. and Klootwijk, J.H. (1996) Dielectric breakdown I: A review of oxide breakdown. Microelectronics Journal, 27 (7). pp. 611-622. ISSN 0026-2692

1995

Luchies, J.R.M. and Kort de, C.G.M. and Verweij, J.F. (1995) Fast turn-on of an NMOS ESD protection transistor: measurements and simulations. Journal of Electrostatics, 36 (1). pp. 81-92. ISSN 0304-3886

Niehof, J. and Graaff de, H.C. and Mouthaan, A.J. and Verweij, J.F. (1995) An empirical model for early resistance changes due to electromigration. Solid-State Electronics, 38 (10). pp. 1817-1827. ISSN 0038-1101

Verweij, Jan and Lunenborg, Meindert (1995) On the design of a reliability circuit simulator. Microelectronics Reliability, 35 (1). pp. 101-103. ISSN 0026-2714

1994

Verweij, J.F. and Brombacher, A.C. and Lunenborg, M.M. (1994) Component lifetime modelling. Quality and Reliability Engineering International, 10 (4). pp. 263-271. ISSN 0748-8017

1993

Holleman, J. and Kuiper, A.E.T. and Verweij, J.F. (1993) Kinetics of the Low Pressure Chemical Vapor Deposition of Polycrystalline Germanium-Silicon Alloys from SiH4 and GeH4. Journal of the Electrochemical Society, 140 (6). pp. 1717-1722. ISSN 0013-4651

Holleman, Jisk and Verweij, Jan F. (1993) Extraction of Kinetic Parameters for the Chemical Vapor Deposition of Polycrystalline Silicon at Medium and Low Pressures. Journal of the Electrochemical Society, 140 (7). pp. 2089-2097. ISSN 0013-4651

Luchies, Jan Marc and Kuper, Fred and Verweij, Jan (1993) On the use of DC measurements for ESD-related process monitoring. Quality and Reliability Engineering International, 9 (4). pp. 309-313. ISSN 0748-8017

Verweij, Jan F. (1993) VLSI Reliability in Europe. Proceedings of the IEEE, 81 (5). pp. 675-681. ISSN 0018-9219