Laterally confined large-grained Poly-GeSi films: Crystallization and dopant activation using green laser

Rangarajan, B. and Kovalgin, A.Y. and Oesterlin, P. and Kloe de, R. and Brunets, I. and Schmitz, J. (2012) Laterally confined large-grained Poly-GeSi films: Crystallization and dopant activation using green laser. ECS Journal of Solid State Science and Technology, 1 (6). pp. 263-268. ISSN 2162-8777

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Abstract:	This paper reports crystallization with a pulsed Yb:YAG thin disk laser (λ = 515 nm) of amorphous Ge0.85Si0.15 films approximately 100 nm thick, on silicon wafers with thermal oxide. Pre-patterned lines were employed to steer the crystallization and to form confined large grains. In total, 64% of the grains were longer than 2 μm, among them 40% were reaching 8–35 μm in length. These values, orders of magnitude larger than the layer thickness, were a result of so-called super-lateral growth. The grains were laterally confined within a 3 μm wide space. The crystallization led to a substantial residual tensile stress with a strain of 3.4%. Green-laser activation of BF2 +, As+ and P+ implants was studied in amorphous and polycrystalline Ge0.85Si0.15 films and led to successful dopant activation with resistivity values in the range of 5–20 m_-cm achieved for all the implants.
Item Type:	Article
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/82338
Official URL:	http://dx.doi.org/10.1149/2.011206jss
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