Integrated wafer-through fluidic connection for surface channel technology


Groenesteijn, J. and Boer, M.J. de and Lammerink, T.S.J. and Lötters, J.C. and Wiegerink, R.J. (2012) Integrated wafer-through fluidic connection for surface channel technology. In: 23rd Micromechanics and Microsystems Europe Workshop, MME 2012, 9-12 September 2012, Ilmenau, Germany.

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Abstract:A new method to integrate fluidic access to devices made by surface channel technology is proposed. The method uses a high aspect-ratio DRIE process for etching wafer through trenches to allow access to the front side of the surface channel device. LPCVD of TEOS is used as etch-stop and to define a reliable connection between channel and access trench during fabrication. The resulting connection is robust and increases design freedom for the surface channel technology. The complete fluid path has only one wetting material.
Item Type:Conference or Workshop Item
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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