Influence of charge compensation mechanisms on the sheet electron density at conducting LaAlO3/SrTiO3-interfaces

Gunkel, F. and Brinks, P. and Hoffmann-Eifert, S. and Dittmann, R. and Huijben, M. and Kleibeuker, J.E. and Koster, G. and Rijnders, A.J.H.M. (2012) Influence of charge compensation mechanisms on the sheet electron density at conducting LaAlO3/SrTiO3-interfaces. Applied physics letters, 100 (5). 052103-1 - 052103-3. ISSN 0003-6951

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Abstract:	The equilibrium conductance of LaAlO3/SrTiO3 (LAO/STO)-heterointerfaces was investigated at high temperatures (950¿K-1100¿K) as a function of ambient oxygen partial pressure (pO2). Metallic LAO/STO-interfaces were obtained for LAO grown on STO single crystals as well as on STO-buffered (La,Sr)(Al,Ta)O3 substrates. For both structures, the high temperature sheet carrier density nS of the LAO/STO-interface saturates at a value of about 1¿×¿1014¿cm¿2 for reducing conditions, which indicates the presence of interfacial donor states. A significant decrease of nS is observed at high oxygen partial pressures. According to the defect chemistry model of donor-doped STO, this behavior for oxidizing conditions can be attributed to the formation of Sr-vacancies as charge compensating defects.
Item Type:	Article
Copyright:	© 2012 American Institute of Physics
Faculty:	Science and Technology (TNW)
Research Chair:	Nano Electronic Materials (NEM)
Research Group:	Inorganic Materials Science (IMS)
Link to this item:	http://purl.utwente.nl/publications/81873
Official URL:	http://dx.doi.org/10.1063/1.3679139
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