Ion assisted growth of B 4C diffusion barrier layers in Mo/Si multilayered structures

Share/Save/Bookmark

Bruijn, S. and Kruijs, R.W.E. van de and Yakshin, A.E. and Bijkerk, F. (2012) Ion assisted growth of B 4C diffusion barrier layers in Mo/Si multilayered structures. Journal of applied physics, 111 (6). 64303 - 64307. ISSN 0021-8979

[img] PDF
Restricted to UT campus only
: Request a copy
259kB
Abstract:We investigated the thermal stability of e-beam deposited Mo/B 4C/Si/B 4C layered systems, with and without ion assistance during the growth of the B 4C diffusion barrier layers. The thermal stability was investigated by in situ thermal annealing during grazing incidence X-ray reflection. By studying partially treated B 4C barrier layers, we found that the improvement in thermal stability is caused by an enhanced density of the B 4C layer. © 2012 American Institute of Physics.
Item Type:Article
Copyright:© 2012 American Institute of Physics
Faculty:
Science and Technology (TNW)
Research Group:
Link to this item:http://purl.utwente.nl/publications/81722
Official URL:http://dx.doi.org/10.1063/1.3693992
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 288368