Novel test structures for dedicated temperature budget determination

Faber, Erik J. and Wolters, Rob A.M. and Schmitz, Jurriaan (2012) Novel test structures for dedicated temperature budget determination. IEEE Transactions on Semiconductor Manufacturing, 25 (3). pp. 339-345. ISSN 0894-6507

PDF
Restricted to UT campus only: Request a copy
5Mb

Abstract:	We present a novel method for determining the temperature budget of the process side of silicon substrates and chips, based on well-known silicide formation reactions of metal–Si systems and (four-point probe) resistance measurements. In this paper, we focus on the Pd–Si system that is most temperature sensitive in the range from 100 °C to 200 °C. A variety of test structures is introduced to exploit the specific properties of the diffusion-limited reaction between Pd and Si. Among others, this resulted in gap-based layouts that facilitate an extension of the temperature range to 350 °C. Designs and measurement results are presented, indicating the practicality and the robustness of the proposed technique.
Item Type:	Article
Copyright:	© 2012 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/81449
Official URL:	http://dx.doi.org/10.1109/TSM.2012.2202793
Export this item as:	BibTeX EndNote HTML Citation Reference Manager

Show download statistics for this publication

Repository Staff Only: item control page

Metis ID: 287995