Novel test structures for dedicated temperature budget determination

Share/Save/Bookmark

Faber, Erik J. and Wolters, Rob A.M. and Schmitz, Jurriaan (2012) Novel test structures for dedicated temperature budget determination. IEEE Transactions on Semiconductor Manufacturing, 25 (3). pp. 339-345. ISSN 0894-6507

[img] PDF
Restricted to UT campus only
: Request a copy
5MB
Abstract:We present a novel method for determining the temperature budget of the process side of silicon substrates and chips, based on well-known silicide formation reactions of metal–Si systems and (four-point probe) resistance measurements. In this paper, we focus on the Pd–Si system that is most temperature sensitive in the range from 100 °C to 200 °C. A variety of test structures is introduced to exploit the specific properties of the diffusion-limited reaction between Pd and Si. Among others, this resulted in gap-based layouts that facilitate an extension of the temperature range to 350 °C. Designs and measurement results are presented, indicating the practicality and the robustness of the proposed technique.
Item Type:Article
Copyright:© 2012 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/81449
Official URL:http://dx.doi.org/10.1109/TSM.2012.2202793
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 287995