Low-stress highly-conductive in-situ boron doped Ge$_{0.7}$Si$_{0.3}$ films by LPCVD


Kazmi, S.N.R. and Kovalgin, A.Y. and Aarnink, A.A.I. and Salm, C. and Schmitz, J. (2012) Low-stress highly-conductive in-situ boron doped Ge$_{0.7}$Si$_{0.3}$ films by LPCVD. ECS journal of solid state science and technology, 1 (5). P222-P226. ISSN 2162-8777

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Abstract:This paper reports on low pressure chemical vapor deposited in-situ boron doped polycrystalline germanium-silicon layers with 70% germanium content. The effect of diborane partial pressure on the properties of the GeSi alloy is investigated. The obtained high boron concentration results in resistivity values less than 1 mΩ-cm. The layers deposited at low partial pressures of B2H6 exhibit very low stress down to –3MPa.With increasing B2H6 partial pressure first the stress changes from tensile to compressive, followed by a phase transition from polycrystalline to amorphous. The highly doped, low stress poly-Ge0.7Si0.3 layers deposited at 430◦C are further applied in high-Q microelectromechanical resonators envisaged for above-IC integration with CMOS.
Item Type:Article
Copyright:© 2012 Electrochemical Society
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/81308
Official URL:https://doi.org/10.1149/2.008205jss
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