Low-Stress Highly-Conductive In-Situ Boron Doped Ge $_{0.7}$ Si $_{0.3}$ Films by LPCVD

Kazmi, S.N.R. and Kovalgin, A.Y. and Aarnink, A.A.I. and Salm, C. and Schmitz, J. (2012) Low-Stress Highly-Conductive In-Situ Boron Doped Ge $_{0.7}$ Si $_{0.3}$ Films by LPCVD. ECS Journal of Solid State Science and Technology, 1 (5). P222-P226. ISSN 2162-8777

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Abstract:	This paper reports on low pressure chemical vapor deposited in-situ boron doped polycrystalline germanium-silicon layers with 70% germanium content. The effect of diborane partial pressure on the properties of the GeSi alloy is investigated. The obtained high boron concentration results in resistivity values less than 1 mΩ-cm. The layers deposited at low partial pressures of B2H6 exhibit very low stress down to –3MPa.With increasing B2H6 partial pressure first the stress changes from tensile to compressive, followed by a phase transition from polycrystalline to amorphous. The highly doped, low stress poly-Ge0.7Si0.3 layers deposited at 430◦C are further applied in high-Q microelectromechanical resonators envisaged for above-IC integration with CMOS.
Item Type:	Article
Copyright:	© 2012 Electrochemical Society
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/81308
Official URL:	http://dx.doi.org/10.1149/2.008205jss
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Low-Stress Highly-Conductive In-Situ Boron Doped GeSi Films by LPCVD

Low-Stress Highly-Conductive In-Situ Boron Doped Ge $_{0.7}$ Si $_{0.3}$ Films by LPCVD