Channeling in helium ion microscopy: Mapping of crystal orientation


Veligura, V. and Hlawacek, G. and Gastel, R. van and Zandvliet, H.J.W. and Poelsema, B. (2012) Channeling in helium ion microscopy: Mapping of crystal orientation. Beilstein journal of nanotechnology, 3 . 501 - 506. ISSN 2190-4286

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Abstract:Background: The unique surface sensitivity and the high resolution that can be achieved with helium ion microscopy make it a
competitive technique for modern materials characterization. As in other techniques that make use of a charged particle beam, channeling
through the crystal structure of the bulk of the material can occur.
Results: Here, we demonstrate how this bulk phenomenon affects secondary electron images that predominantly contain surface
information. In addition, we will show how it can be used to obtain crystallographic information. We will discuss the origin of
channeling contrast in secondary electron images, illustrate this with experiments, and develop a simple geometric model to predict
channeling maxima.
Conclusion: Channeling plays an important role in helium ion microscopy and has to be taken into account when trying to achieve
maximum image quality in backscattered helium images as well as secondary electron images. Secondary electron images can be
used to extract crystallographic information from bulk samples as well as from thin surface layers, in a straightforward manner.
Item Type:Article
Additional information:Optics (see also 3311) Solid state physics (see also 2307) Niet in een andere rubriek onder te brengen Open access article
Copyright:© 2012 The Author(s)
Science and Technology (TNW)
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