Extraction of the electric field in field plate assisted RESURF devices


Share/Save/Bookmark

Boksteen, B.K. and Dhar, S. and Heringa, A. and Koops, G.E.J. and Hueting, R.J.E. (2012) Extraction of the electric field in field plate assisted RESURF devices. In: 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2012, 3-7 June 2012, Bruges, Belgium (pp. pp. 145-148).

[img] PDF
Restricted to UT campus only
: Request a copy
546kB
Abstract:It has previously been reported that the lateral electric field (Ex) in the drain extension of thin SOI HV (700V) field plate assisted RESURF devices can be extracted from their ID-VD characteristics in the subthreshold regime. In this work the prerequisites for valid field extraction and the (voltage) range of validity are established for linearly graded drain extension based RESURF devices through a combination of analytical calculations and TCAD device modeling. It is shown that the most important condition for field extraction is that an increment dVDS should not affect the lateral field at the already depleted zone. This unique condition is found to be met in the drain extension at distances larger than a specific length (5.3_) governed by the drain extension silicon and oxide thicknesses. For realistic device parameters the method is shown to hold for devices with a BVDS of _ 150V and higher.
Item Type:Conference or Workshop Item
Copyright:© 2012 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/80928
Official URL:http://dx.doi.org/10.1109/ISPSD.2012.6229044
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 287946