The influence of substrate temperature on growth of para-sexiphenyl thin films on Ir(111) supported graphene studied by LEEM

Khokhar, F.S. and Hlawacek, G. and Gastel van, R. and Zandvliet, H.J.W. and Teichert, C. and Poelsema, B. (2012) The influence of substrate temperature on growth of para-sexiphenyl thin films on Ir(111) supported graphene studied by LEEM. Surface science, 606 (3-4). 475 - 480. ISSN 0039-6028

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Abstract:	The growth of para-sexiphenyl (6P) thin films as a function of substrate temperature on Ir ${111}$ supported graphene flakes has been studied in real-time with Low Energy Electron Microscopy (LEEM). Micro Low Energy Electron Diffraction (μLEED) has been used to determine the structure of the different 6P features formed on the surface. We observe the nucleation and growth of a wetting layer consisting of lying molecules in the initial stages of growth. Graphene defects – wrinkles – are found to be preferential sites for the nucleation of the wetting layer and of the 6P needles that grow on top of the wetting layer in the later stages of deposition. The molecular structure of the wetting layer and needles is found to be similar. As a result, only a limited number of growth directions are observed for the needles. In contrast, on the bare Ir ${111}$ surface 6P molecules assume an upright orientation. The formation of ramified islands is observed on the bare Ir ${111}$ surface at 320 K and 352 K, whereas at 405 K the formation of a continuous layer of upright standing molecules growing in a step flow like manner is observed
Item Type:	Article
Copyright:	© Elsevier
Faculty:	Science and Technology (TNW)
Research Group:	Physics of Interfaces and Nanomaterials (PIN)
Link to this item:	http://purl.utwente.nl/publications/80918
Official URL:	http://dx.doi.org/10.1016/j.susc.2011.11.012
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