Interface Characterization of Metals and Metal-nitrides to Phase Change Materials

Roy, Deepu and Wolters, Rob A.M. (2011) Interface Characterization of Metals and Metal-nitrides to Phase Change Materials. In: 2011 MRS Spring Meeting, 25-29 April 2011, San Francisco, CA, USA.

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Abstract:	We have investigated the interfacial contact properties of the CMOS compatible electrode materials W, TiW, Ta, TaN and TiN to doped-Sb2Te phase change material (PCM). This interface is characterized both in the amorphous and in the crystalline state of the doped-Sb2Te. The electrical nature of the interface is characterized by contact resistance measurements and is expressed in terms of specific interfacial contact resistance (ρC). These measurements are performed on four-terminal Kelvin Resistor test structures. Knowledge of the ρC is useful for selection of the electrode in the integration and optimization of the phase change memory cells.
Item Type:	Conference or Workshop Item
Copyright:	© 2011 Cambridge University Press
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/79894
Official URL:	http://dx.doi.org/10.1557/opl.2011.978
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Metis ID: 285045