Contact resistance of TiW to ultra-thin phase change material layers


Roy, Deepu and Klootwijk, Johan H. and Gravesteijn, Dirk J. and Wolters, Rob A.M. (2011) Contact resistance of TiW to ultra-thin phase change material layers. In: 41st European Solid-State Device Research Conference, ESSDERC 2011, 12-16 September 2011, Helsinki, Finland (pp. pp. 87-90).

[img] PDF
Restricted to UT campus only
: Request a copy
Abstract:In this article we report on the change in contact resistance of TiW to doped-Sb2Te in the 5nm-50nm thickness range of the PCM layer. This interface is characterized both in the amorphous and in crystalline state of doped-Sb2Te. The nature of the interface is characterized by electrical contact resistance measurements and is expressed in terms of specific contact resistance, ρC. Results from the measurements on these structures with illumination indicated the existence of a space-charge region at the metal amorphous doped-Sb2Te interface.
Item Type:Conference or Workshop Item
Copyright:© 2011 IEEE
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:
Official URL:
Export this item as:BibTeX
HTML Citation
Reference Manager


Repository Staff Only: item control page