Dielectric Behavior of Self-Assembled Monolayers on Conducting Metal Oxides

Yildirim, O. and Maas, M.G. and Veen de, P.J. and Nguyen, D.M. and Reinhoudt, D.N. and Blank, D.H.A. and Rijnders, A.J.H.M. and Huskens, J. (2012) Dielectric Behavior of Self-Assembled Monolayers on Conducting Metal Oxides. Journal of materials chemistry, 22 (6). 2405 - 2409. ISSN 0959-9428

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Abstract:	Pt top contacts have been deposited by pulsed laser deposition (PLD) onto bare and tetradecylphosphate (TDP) self-assembled monolayer (SAM)-modified Nb-doped SrTiO3 (Nb-STO) substrates. For the SAM-modified substrates, electrochemical Cu deposition occurred only at the places where electrical shorts existed between the top contact and the substrate. A nearly perfect yield of top contacts without shorts was obtained, which shows the dense packing and robustness of the SAM. The SAM decreased the leakage current about 500 times compared to the bare substrate. Alkylphosphate SAMs on conducting metal oxide substrates can therefore be used as dielectric thin films for device fabrication.
Item Type:	Article
Copyright:	© 2012 Royal Society of Chemistry
Faculty:	Science and Technology (TNW)
Research Chair:	Nano Electronic Materials (NEM)
Research Group:	Molecular Nanofabrication (MNF) Inorganic Materials Science (IMS)
Link to this item:	http://purl.utwente.nl/publications/79732
Official URL:	http://dx.doi.org/10.1039/c1jm15061h
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