Rare-earth-ion-doped double tungstates: A promising gain material for integrated optics

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Garcia-Blanco, Sonia M. and Geskus, Dimitri and Dalfsen, Koop van and Aravazhi, Shanmugam and Pollnau, Markus (2011) Rare-earth-ion-doped double tungstates: A promising gain material for integrated optics. In: 8th International Symposium on Modern Optics and Its Applications, ISMOA 2011, 4-7 July 2011, Bandung, Indonesia (pp. pp. 69-70).

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Abstract:In this paper, an overview of the technology as well as the latest developments on RE-doped double tungstate waveguide amplifiers and micro-lasers will be given, including high-gain on-chip waveguide amplifiers inKGdxLu1 x(WO4)2:Yb3+, high-power (>400 mW), broadly tunable (~65 nm), low-quantum-defect (0.7 %) channel waveguide lasers inKGdxLu1-x(WO4)2:Yb3+ as well as on-chip microlasers at ~2 um wavelength inKY1-x-yGdxLuy(WO4)2:Tm3+ for trace-gas detection for medical applications.
Item Type:Conference or Workshop Item
Copyright:© 2011 Indonesian Optical Society
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/79623
Conference URL:http://fismots.fi.itb.ac.id/ismoa/
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