The development of titanium silicide–boron-doped polysilicon resistive temperature sensors

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Vereshchagina, E. and Wolters, R.A.M. and Gardeniers, J.G.E. (2011) The development of titanium silicide–boron-doped polysilicon resistive temperature sensors. Journal of Micromechanics and Microengineering, 21 (10). p. 105022. ISSN 0960-1317

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Abstract:Thin films of titanium silicide $(TiSi_2$) formed on heavily boron-doped polycrystalline silicon $(poly-Si/B^+)$ were applied for the first time for resistive temperature sensing. The temperature sensors exhibited a high-temperature coefficient of resistance of 3.8 x $10^{-3}^{\circ}\mathrm{C}^{-1}$, a linear dependence of resistance on temperature and an excellent thermal and electrical stability up to 800 $^{\circ}\mathrm{C}$. This work discusses the fabrication method and the morphological and electrical characterization of the $TiSi_2/poly-Si$ thin film resistors throughout the stages of its formation.
Item Type:Article
Copyright: © 2011 IOP Publishing
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/79491
Official URL:http://dx.doi.org/10.1088/0960-1317/21/10/105022
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Metis ID: 280291