Low Stress In Situ Boron Doped Poly SiGe Layers for MEMS Modular Integration with CMOS

Kazmi, S.N.R. and Aarnink, A.A.I. and Kovalgin, A.Y. and Salm, C. and Schmitz, J. (2011) Low Stress In Situ Boron Doped Poly SiGe Layers for MEMS Modular Integration with CMOS. ECS Transactions, 35 (30). pp. 45-52. ISSN 1938-5862

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Abstract:	In-situ boron doped LPCVD polycrystalline silicon-germanium (poly Si30Ge70) layers are deposited from silane (SiH4) and germane (GeH4) with fixed GeH4 to SiH4 partial pressure ratio at 430 oC and 0.2 mbar. The layers exhibit resistivities less than 1 m-cm with a uniform boron distribution over the film thickness. The effect of the diborane (B2H6) partial pressure on the properties of the SiGe alloy is investigated. The layers deposited at low partial pressures of B2H6 exhibit very low stress with a trend from tensile to compressive with increasing B2H6 partial pressure, accompanied by a phase transition from polycrystalline to amorphous, allowing to tune for minimal stress.
Item Type:	Article
Copyright:	© 2011 The Electrochemical Society
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/79459
Official URL:	http://dx.doi.org/10.1149/1.3653922
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