Towards in-situ tem analysis of PLD Pb(Zr,Ti)O$_{3}$ thin film membranes


Sardan Sukas, Ö. and Berenschot, J.W. and Boer, M.J. de and Nguyen, M.D. and Zalk, M. van and Abelmann, L. (2011) Towards in-situ tem analysis of PLD Pb(Zr,Ti)O$_{3}$ thin film membranes. In: 22nd Micromechanics and Microsystems Technology Europe Workshop, MME 2011, 19-22 June 2011, Tonsberg, Norway (pp. pp. 287-290).

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Abstract:In this paper, a novel technique for fabricating Transmission Electron Microscopy (TEM) chips for investigating structural and piezoelectric properties of Pulse Laser Deposited (PLD) Lead Zirconium Titanate (PZT) thin films is presented. The method involves silicon-on-insulator (SOI) wafer technology together with deep reactive ion etching (DRIE) and highly selective etchants. This study is unique in the sense that it will facilitate in-situ characterization of the PLD PZT membranes during actuation. As well as PLD PZT, the proposed method can be applied to a variety of materials by proper selection of the etchants and tuning of the process parameters. Being a critical step of the process sequence, the deposition profile of the PZT layer on the Lanthanum Nickel Oxide (LNO) seed layer is characterized prior to fabrication. The results reveal that the PLD process is not conformal and the thickness of the LNO/PZT layer is different on surfaces with different topographies.
Item Type:Conference or Workshop Item
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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