Effects of packaging and process spread on a mobility-based frequency reference in 0.16-μm CMOS

Sebastiano, Fabio and Breems, Lucien and Makinwa, Kofi A.A. and Drago, Salvatore and Leenaerts, Domine and Nauta, Bram (2011) Effects of packaging and process spread on a mobility-based frequency reference in 0.16-μm CMOS. In: 37th European Solid-State Circuits Conference, ESSCIRC 2011, 12-16 September 2011, Helsinki, Finland.

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Abstract:	In this paper, we explore the robustness of frequency references based on the electron mobility in a MOS transistor by implementing them with both thin-oxide and thick-oxide MOS transistors in a 0.16-μm CMOS process, and by testing samples packaged in both ceramic and plastic packages. The proposed low-voltage low-power circuit requires no off-chip components, making it suitable for applications requiring fully integrated solutions, such as Wireless Sensor Networks. Over the temperature range from -55°C to 125°C, its frequency spread is less than ±1% (3σ) after a one-point trim. Fabricated in a baseline 0.16-μm CMOS process, the 50 kHz frequency reference occupies 0.06 mm2 and, at room temperature, its consumption with a 1.2-V supply is less than 17 μW.
Item Type:	Conference or Workshop Item
Copyright:	© 2011 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Integrated Circuit Design (ICD)
Link to this item:	http://purl.utwente.nl/publications/79388
Official URL:	http://dx.doi.org/10.1109/ESSCIRC.2011.6044934
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