1000 dB/cm gain in Yb $^{3+}$ -doped double tungstates

Geskus, D. and Aravazhi, S. and Garcia Blanco, S.M. and Pollnau, M. (2011) 1000 dB/cm gain in Yb $^{3+}$ -doped double tungstates. In: Annual Symposium of the IEEE Photonics Benelux Chapter 2011, 1-2 December 2011, Ghent, Belgium.

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Abstract:	Rare-earth ions are impurities providing low gain, reaching ~10 dB/cm, because electronic transitions within their 4f subshell are parity forbidden, dictating low transition probabilities and cross-sections. Here we exploit the extreme inversion densities attainable in rare-earth-ion-doped microstructures in a host material, potassium double tungstate, that provides enhanced transition cross-sections and dopant concentrations, thereby demonstrating a gain of 935 dB/cm in channel- waveguide and 1028 dB/cm in thin-film geometry, comparable to the best values reported for semiconductor waveguide amplifiers. Further improvement seems feasible with larger dopant concentrations.
Item Type:	Conference or Workshop Item
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Integrated Optical MicroSystems (IOMS)
Link to this item:	http://purl.utwente.nl/publications/79368
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1000 dB/cm gain in Yb-doped double tungstates

1000 dB/cm gain in Yb $^{3+}$ -doped double tungstates