Modelling and optimisation of the internal quantum efficiency of Si-based LEDs

Puliyankot, V. and Hueting, R.J.E. (2011) Modelling and optimisation of the internal quantum efficiency of Si-based LEDs. In: 11th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2011, 5-8 September 2011, Rome, Italy.

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Abstract:	A new model for a 1D Si-based light-emitting p-i-n diode (LED) is presented, describing DC electrical characteristics and the internal quantum efficiency (_IQE) as a function of the applied bias, showing good agreement with the simulation results. An optimization scheme, based on the model, shows improved _IQE for engineered heterojunctions by reducing the diffusion current.
Item Type:	Conference or Workshop Item
Copyright:	© 2011 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/78811
Official URL:	http://dx.doi.org/10.1109/NUSOD.2011.6041104
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