Light emission enhancement by geometrical scaling of carrier injectors in Si-based LEDs

Piccolo, G. and Puliyankot, V. and Kovalgin, A.Y. and Hueting, R.J.E. and Heringa, A. and Schmitz, J. (2011) Light emission enhancement by geometrical scaling of carrier injectors in Si-based LEDs. In: 41st European Solid-State Device Research Conference, ESSDERC 2011, 12-16 September 2011, Helsinki, Finland.

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Abstract:	In this paper we present the increased light emission for Si p-i-n light emitting diodes (LED) by geometrical scaling of the injector size for p- and n- type carriers. TCAD simulations and electrical and optical characteristics of our realized devices support our findings. Reducing the injector size decreases the diffusion current: therefore, for a particular on current, the pn-product, and hence the radiative recombination, inside the active region increases. A comparison is made among reference large-scale, micro-size and nano-size injector p-i-n diodes. We demonstrate a 4-fold increase in electroluminescence (EL) when the injectors are scaled down to micro-size and a further 10-fold increase for nano-size injectors.
Item Type:	Conference or Workshop Item
Copyright:	© 2011 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/78806
Official URL:	http://dx.doi.org/10.1109/ESSDERC.2011.6044206
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