Light emission enhancement by geometrical scaling of carrier injectors in Si-based LEDs


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Piccolo, G. and Puliyankot, V. and Kovalgin, A.Y. and Hueting, R.J.E. and Heringa, A. and Schmitz, J. (2011) Light emission enhancement by geometrical scaling of carrier injectors in Si-based LEDs. In: 41st European Solid-State Device Research Conference, ESSDERC 2011, 12-16 September 2011, Helsinki, Finland (pp. pp. 175-178).

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Abstract:In this paper we present the increased light emission for Si p-i-n light emitting diodes (LED) by geometrical scaling of the injector size for p- and n- type carriers. TCAD simulations and electrical and optical characteristics of our realized devices support our findings. Reducing the injector size decreases the diffusion current: therefore, for a particular on current, the pn-product, and hence the radiative recombination, inside the active region increases. A comparison is made among reference large-scale, micro-size and nano-size injector p-i-n diodes. We demonstrate a 4-fold increase in electroluminescence (EL) when the injectors are scaled down to micro-size and a further 10-fold increase for nano-size injectors.
Item Type:Conference or Workshop Item
Copyright:© 2011 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/78806
Official URL:http://dx.doi.org/10.1109/ESSDERC.2011.6044206
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