Rare-earth-ion doped amplifiers and lasers integrated on silicon


Wörhoff, Kerstin and Bernhardi, Edward H. and Bradley, Jonathan D.B. and Yang, Jing and Agazzi, Laura and Ay, Feridun and Ridder, René M. de and Pollnau, Markus (2011) Rare-earth-ion doped amplifiers and lasers integrated on silicon. In: 13th International Conference on Transparent Optical Networks, ICTON 2011, 26-30 June 2011, Stockholm, Sweden.

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Abstract:Silicon-compatible rare-earth-ion doped Al2O3 thin-film technology is optimized with respect to fabrication reliability, optical loss and gain performance. Net gain is demonstrated in the 0.88, 1.0, 1.3 and 1.5-μm wavelength ranges upon doping of the host material with Nd3+, Yb3+ or Er3+. On-chip devices realized and tested are, among others, a high-speed (170-Gbit/s) amplifier for C-band operation, an amplifier for integration into an optical backplane, a highly efficient (67% slope) waveguide laser with on-chip integrated Bragg gratings and a narrow-linewidth (1.7 kHz) distributed feedback laser.
Item Type:Conference or Workshop Item
Copyright:© 2011 IEEE
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/78637
Official URL:http://dx.doi.org/10.1109/ICTON.2011.5970947
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