Rare-earth-ion doped amplifiers and lasers integrated on silicon


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Wörhoff, Kerstin and Bernhardi, Edward H. and Bradley, Jonathan D.B. and Yang, Jing and Agazzi, Laura and Ay, Feridun and Ridder, René M. de and Pollnau, Markus (2011) Rare-earth-ion doped amplifiers and lasers integrated on silicon. In: 13th International Conference on Transparent Optical Networks, ICTON 2011, 26-30 June 2011, Stockholm, Sweden.

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Abstract:Silicon-compatible rare-earth-ion doped Al2O3 thin-film technology is optimized with respect to fabrication reliability, optical loss and gain performance. Net gain is demonstrated in the 0.88, 1.0, 1.3 and 1.5-μm wavelength ranges upon doping of the host material with Nd3+, Yb3+ or Er3+. On-chip devices realized and tested are, among others, a high-speed (170-Gbit/s) amplifier for C-band operation, an amplifier for integration into an optical backplane, a highly efficient (67% slope) waveguide laser with on-chip integrated Bragg gratings and a narrow-linewidth (1.7 kHz) distributed feedback laser.
Item Type:Conference or Workshop Item
Copyright:© 2011 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/78637
Official URL:http://dx.doi.org/10.1109/ICTON.2011.5970947
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