A 65-nm CMOS Temperature-Compensated Mobility-Based Frequency Reference for Wireless Sensor Networks

Sebastiano, Fabio and Breems, Lucien J. and Makinwa, Kofi A.A. and Drago, Salvatore and Leenaerts, Domine M.W. and Nauta, Bram (2011) A 65-nm CMOS Temperature-Compensated Mobility-Based Frequency Reference for Wireless Sensor Networks. IEEE Journal of Solid-State Circuits, 46 (7). pp. 1544-1552. ISSN 0018-9200

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Abstract:	A temperature-compensated CMOS frequency reference based on the electron mobility in a MOS transistor is presented. Over the temperature range from -55°C to 125°C , the frequency spread of the complete reference is less than ±0.5% after a two-point trim and less than ±2.7% after a one-point trim. These results make it suitable for use in Wireless Sensor Network nodes. Fabricated in a baseline 65-nm CMOS process, the 150 kHz frequency reference occupies 0.2 mm2 and draws 42.6 μA from a 1.2-V supply at room temperature.
Item Type:	Article
Copyright:	© 2011 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Integrated Circuit Design (ICD)
Link to this item:	http://purl.utwente.nl/publications/78283
Official URL:	http://dx.doi.org/10.1109/JSSC.2011.2143630
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