Green Laser Crystallization of GeSi Thin Films and Dopant Activation

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Rangarajan, Balaji and Brunets, Ihor and Oesterlin, Peter (2011) Green Laser Crystallization of GeSi Thin Films and Dopant Activation. ECS Transactions, 35 (2). pp. 17-25. ISSN 1938-5862

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Abstract:Laser-crystallization of amorphous $Ge_{0.85}Si_{0.15}$ films is studied, using green laser scanning and preformed topography to steer the crystallization. Large crystals (8x2 $\mu m^2$) are formed with location-controlled grain boundaries. The obtained films were characterized using Scanning Electron Microscopy, Transmission Electron Microscopy, Atomic Force Microscopy, X-Ray Photoelectron spectroscopy, X-Ray Diffraction and Spectroscopic Ellipsometry. In addition, the activation of ion-implanted poly- $Ge_{0.85}Si_{0.15}$ films is compared after furnace annealing, rapid thermal annealing and green-laser annealing
Item Type:Article
Additional information:219th ECS meeting Transactions, 1-6 May 2011, Montreal, QC, Canada
Copyright:© 2011 The Electrochemical Society
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/77757
Official URL:http://dx.doi.org/10.1149/1.3568844
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