Green Laser Crystallization of GeSi Thin Films and Dopant Activation

Rangarajan, Balaji and Brunets, Ihor and Oesterlin, Peter (2011) Green Laser Crystallization of GeSi Thin Films and Dopant Activation. ECS Transactions, 35 (2). pp. 17-25. ISSN 1938-5862

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Abstract:	Laser-crystallization of amorphous $Ge_{0.85}Si_{0.15}$ films is studied, using green laser scanning and preformed topography to steer the crystallization. Large crystals (8x2 $\mu m^2$ ) are formed with location-controlled grain boundaries. The obtained films were characterized using Scanning Electron Microscopy, Transmission Electron Microscopy, Atomic Force Microscopy, X-Ray Photoelectron spectroscopy, X-Ray Diffraction and Spectroscopic Ellipsometry. In addition, the activation of ion-implanted poly- $Ge_{0.85}Si_{0.15}$ films is compared after furnace annealing, rapid thermal annealing and green-laser annealing
Item Type:	Article
Copyright:	© 2011 The Electrochemical Society
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/77757
Official URL:	http://dx.doi.org/10.1149/1.3568844
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