Green Laser Crystallization of GeSi Thin Films and Dopant Activation


Rangarajan, Balaji and Brunets, Ihor and Oesterlin, Peter (2011) Green Laser Crystallization of GeSi Thin Films and Dopant Activation. ECS Transactions, 35 (2). pp. 17-25. ISSN 1938-5862

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Abstract:Laser-crystallization of amorphous $Ge_{0.85}Si_{0.15}$ films is studied, using green laser scanning and preformed topography to steer the crystallization. Large crystals (8x2 $\mu m^2$) are formed with location-controlled grain boundaries. The obtained films were characterized using Scanning Electron Microscopy, Transmission Electron Microscopy, Atomic Force Microscopy, X-Ray Photoelectron spectroscopy, X-Ray Diffraction and Spectroscopic Ellipsometry. In addition, the activation of ion-implanted poly- $Ge_{0.85}Si_{0.15}$ films is compared after furnace annealing, rapid thermal annealing and green-laser annealing
Item Type:Article
Additional information:219th ECS meeting Transactions, 1-6 May 2011, Montreal, QC, Canada
Copyright:© 2011 The Electrochemical Society
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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