Simultaneous extraction of threshold voltage and mobility degradation from on-the-fly NBTI measurements

Herfst, Roelof W. and Schmitz, Jurriaan and Scholten , Andries J. (2011) Simultaneous extraction of threshold voltage and mobility degradation from on-the-fly NBTI measurements. In: IEEE International Reliability Physics Symposium, IRPS 2011, 10-14 April 2011, Monterey, USA.

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Abstract:	Conventional on-the-fly characterization of NBTI translates measured changes in drain current to a threshold voltage shift only. In this paper, we show how to extend this method to the simultaneous determination of threshold voltage and zero-field-mobility degradation. This is achieved by using a Vector Network Analyzer for OTF characterization of gds and gm. For the technology under study, we have found that degradation in the zero-field mobility is responsible for at most 10% of the drain current change. Effective mobility, on the other hand, does change as a direct consequence of the threshold-voltage shift.
Item Type:	Conference or Workshop Item
Copyright:	© 2011 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/77746
Official URL:	http://dx.doi.org/10.1109/IRPS.2011.5784607
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