Influence of silicon orientation and cantilever undercut on the determination of the Young’s modulus of thin films

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Nazeer, H. and Woldering, L.A. and Abelmann, L. and Nguyen, M.D. and Rijnders, G. and Elwenspoek, M.C. (2011) Influence of silicon orientation and cantilever undercut on the determination of the Young’s modulus of thin films. Microelectronic Engineering, 88 (8). pp. 2345-2348. ISSN 0167-9317

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Abstract:The Young’s modulus of thin films can be determined by deposition on a micronsized Si cantilever and measuring the resonance frequency before and after deposition. The accuracy of the method depends strongly on the initial determination of the mechanical properties and dimensions of the cantilever. We discuss the orientation of the cantilever with respect to the Si crystal, and the inevitable undercut of the cantilever caused by process inaccuracies. By finite element modelling we show that the Young’s modulus should be used instead of the analytical plate modulus approximation for the effective Young’s modulus of Si cantilevers used in this work for both the 1 0 0 and 1 1 0 crystal orientation. Cantilever undercut can be corrected by variation of the cantilever length. As an example, the Young’s modulus of PbZr0.52Ti0.48O3 (PZT) thin films deposited by pulsed laser deposition (PLD) was determined to be 99 GPa, with 1.4 GPa standard error.

Item Type:Article
Copyright:© 2011 Elsevier
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/77669
Official URL:http://dx.doi.org/10.1016/j.mee.2011.01.028
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