Rare-earth-ion-doped lasers integrated on a silicon chip

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Pollnau, M. and Bernhardi, E.H. and Bradley, J.D.B. and Ridder de, R.M. and Wörhoff, K. and Yang, J. and Diemeer, M.B.J. and Driessen, A. (2011) Rare-earth-ion-doped lasers integrated on a silicon chip. In: Joint Annual Meeting of the Swiss Physical Society and the Austrian Physical Society, 15-17 June 2011, Lausanne, Switzerland.

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Abstract:Future integrated photonic circuits will utilize hybrid integration of optical materials with different functionalities, among them optical gain. We have developed two rare-earth-ion-activated materials which can be directly deposited on any passive material platform, among others on silicon wafers. In a Nd-complex-doped fluorinated polymer, we demonstrated the first-ever continuous-wave solid polymer laser, operating at 1062 nm and 878 nm. In amorphous Al2O3, we demonstrated an Er-doped, widely wavelength-selective microring laser that operates across the telecom C-band. Employing Bragg gratings lithographically inscribed into channel waveguides, we obtained cavities with a Q-factor of >10e6. With such grating reflectors, we achieved a free-running 1542-nm distributed-feedback laser with an ultra-narrow linewidth of 1.7 kHz, equaling a coherence length of 55 km and a Q-factor of 1.14x10e11. With a distributed-Bragg-grating cavity, we obtained an Yb-doped laser at 1021 nm with 47 mW output power and 67% slope efficiency, which may enable linewidths below 100 Hz.
Item Type:Conference or Workshop Item
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Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/77566
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