Highly efficient lasers and amplifiers in double tungstates


Pollnau, M. and Geskus, D. and Dalfsen, K. van and Garcia Blanco, S.M. and Aravazhi, S. (2011) Highly efficient lasers and amplifiers in double tungstates. In: Joint Annual Meeting of the Swiss Physical Society and the Austrian Physical Society, 15-17 June 2011, Lausanne, Switzerland (pp. Paper 627).

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Abstract:The double tungstates KY(WO4)2, KGd(WO4)2, and KLu(WO4)2 are excellent candidates for solid-state lasers because of the large transition cross-sections of optically active rare-earth ions doped into these hosts. We grow actively doped KY1-x-yGdxLuy(WO4)2 layers onto KY(WO4)2 substrates by liquid-phase epitaxy. Co-doping the layers with optically inert Gd3+ and Lu3+ ions simultaneously allows for lattice matching and enhanced refractive index contrast with respect to the substrate. Low-loss channel waveguides are microstructured into the layers by Ar+-beam etching, resulting in strong pump- and signal-mode confinement. Yb-doped channel waveguide lasers deliver 650 mW output power at 1 µm. Record-high slope efficiency (85%) and record-low quantum defect (0.7%) for dielectric lasers are achieved. In pump-signal experiments, exploiting highly doped KGd0.447Lu0.078Yb0.475(WO4)2 channel waveguides, we demonstrate a giant optical gain of 950 dB/cm, exceeding the gain previously reported in rare-earth-ion-doped materials by two orders of magnitude and comparable to the gain obtained in semiconductor optical amplifiers.
Item Type:Conference or Workshop Item
Additional information:http://www.sps.ch/uploads/media/2011Programmuebersicht.pdf
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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