Spark protection layers for CMOS pixel anode chips in MPGDs

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Bilevych, Y. and Blanco Carballo, V.M. and Chefdeville, M.A. and Colas, P. and Delagnes, E. and Fransen, M. and Graaff van der, H. and Koppert, W.J.C. and Melai, J. and Salm, C. and Schmitz, J. and Timmermans, J. and Wyrsch, N. (2011) Spark protection layers for CMOS pixel anode chips in MPGDs. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 629 (1). pp. 66-73. ISSN 0168-9002

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Abstract:In this work we have investigated the functioning of high resistivity amorphous silicon and silicon-rich nitride layers as a protection against discharges in Micro-Patterned Gaseous Detectors (MPGDs).When the anode is protected by a high resistivity layer, discharge signals are limited in charge. A signal reduction is expected when the layers are too thick; simulations presented in this paper indicate that layer supto 10 mm thick can be applied without significantly degrading the detector performance. Layers of amorphous silicon and silicon-rich nitride have been deposited on top of Timepix and Medipix 2chips in GridPix detectors; with this, chips survive naturally occurring as well as intentionally produced discharges.
Item Type:Article
Copyright:© 2011 Elsevier
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/77324
Official URL:http://dx.doi.org/10.1016/j.nima.2010.11.116
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