Contact resistance of TiW to phase change material in the amorphous and crystalline states

Roy, D. and Zandt in 't, M.A.A. and Wolters, R.A.M. and Timmering, C.E. and Klootwijk, J.H. (2009) Contact resistance of TiW to phase change material in the amorphous and crystalline states. In: 10th Non-Volatile Memory Technology Symposium, NVMTS 2009, 25-28 October 2009, Portland, OR, USA.

PDF
Restricted to UT campus only: Request a copy
3559Kb

Abstract:	Electrical characterisation of metal to Phase Change Material (PCM) contacts is necessary for optimum power transfer during switching of a Phase Change Random Access Memory (PCRAM) cell. In this article, titanium tungsten (Ti0.3W0.7) to two phase change materials; doped-Sb2Te and Ge2Sb2Te5 are characterised using Circular Transfer Length Method (CTLM) structures. A metal lift off process with a maximum process temperature of 120Ã�Â°C allows processing of these CTLM structures below the crystallization temperature of PCM used. The specific contact resistance for TiW-PCM contacts with PCM in amorphous (high resistive) and crystalline (low resistive) phases is extracted from these CTLM measurements.
Item Type:	Conference or Workshop Item
Copyright:	© 2009 IEEE
Link to this item:	http://purl.utwente.nl/publications/76689
Official URL:	http://dx.doi.org/10.1109/NVMT.2009.5429780
Export this item as:	BibTeX EndNote HTML Citation Reference Manager

Show download statistics for this publication

Repository Staff Only: item control page