Contact resistance of TiW to phase change material in the amorphous and crystalline states


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Roy, D. and Zandt in 't, M.A.A. and Wolters, R.A.M. and Timmering, C.E. and Klootwijk, J.H. (2009) Contact resistance of TiW to phase change material in the amorphous and crystalline states. In: 10th Non-Volatile Memory Technology Symposium, NVMTS 2009, 25-28 October 2009, Portland, OR, USA.

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Abstract:Electrical characterisation of metal to Phase Change Material (PCM) contacts is necessary for optimum power transfer during switching of a Phase Change Random Access Memory (PCRAM) cell. In this article, titanium tungsten (Ti0.3W0.7) to two phase change materials; doped-Sb2Te and Ge2Sb2Te5 are characterised using Circular Transfer Length Method (CTLM) structures. A metal lift off process with a maximum process temperature of 120�°C allows processing of these CTLM structures below the crystallization temperature of PCM used. The specific contact resistance for TiW-PCM contacts with PCM in amorphous (high resistive) and crystalline (low resistive) phases is extracted from these CTLM measurements.
Item Type:Conference or Workshop Item
Copyright:© 2009 IEEE
Link to this item:http://purl.utwente.nl/publications/76689
Official URL:http://dx.doi.org/10.1109/NVMT.2009.5429780
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