Specific contact resistance of phase change materials to metal electrode

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Roy, Deepu and Zandt, Micha A.A. in 't and Wolters, Rob A.M. (2010) Specific contact resistance of phase change materials to metal electrode. IEEE Electron Device Letters, 31 (11). pp. 1293-1295. ISSN 0741-3106

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Abstract:For phase change random access memory (PCRAM) cells, it is important to know the contact resistance of phase change materials (PCMs) to metal electrodes at the contacts. In this letter, we report the systematic determination of the specific contact resistance (ρc) of doped Sb2Te and Ge2Sb2Te5 to TiW metal electrodes. These data are reported for both the amorphous and the crystalline states of these PCMs. The temperature and voltage dependences of ρc are also studied. A detailed understanding of these contacts is essential for the scaling, design, device modeling, and optimization of PCRAM cells.
Item Type:Article
Copyright:© 2010 IEEE
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Electrical Engineering, Mathematics and Computer Science (EEMCS)
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Link to this item:http://purl.utwente.nl/publications/76685
Official URL:http://dx.doi.org/10.1109/LED.2010.2066256
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