Speciﬁc contact resistance of phase change materials to metal electrode

Roy, Deepu and Zandt in 't, Micha A.A. and Wolters, Rob A.M. (2010) Speciﬁc contact resistance of phase change materials to metal electrode. IEEE Electron Device Letters, 31 (11). pp. 1293-1295. ISSN 0741-3106

PDF
Restricted to UT campus only: Request a copy
342Kb

Abstract:	For phase change random access memory (PCRAM) cells, it is important to know the contact resistance of phase change materials (PCMs) to metal electrodes at the contacts. In this letter, we report the systematic determination of the speciﬁc contact resistance (ρc) of doped Sb2Te and Ge2Sb2Te5 to TiW metal electrodes. These data are reported for both the amorphous and the crystalline states of these PCMs. The temperature and voltage dependences of ρc are also studied. A detailed understanding of these contacts is essential for the scaling, design, device modeling, and optimization of PCRAM cells.
Item Type:	Article
Copyright:	© 2010 IEEE
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/76685
Official URL:	http://dx.doi.org/10.1109/LED.2010.2066256
Export this item as:	BibTeX EndNote HTML Citation Reference Manager

Show download statistics for this publication

Repository Staff Only: item control page

Metis ID: 276420