Electrical characterization of Thin-Film structures with redeposited sidewall


Roy, Deepu and Zandt, Micha A.A. in 't and Wolters, Rob A.M. (2011) Electrical characterization of Thin-Film structures with redeposited sidewall. IEEE Transactions on Electron Devices, 58 (4). pp. 924-930. ISSN 0018-9383

[img] PDF
Restricted to UT campus only
: Request a copy
Abstract:Accurate electrical characterization of test structures and devices requires identification and correction for parasitic current paths in the measurement network. The sidewalls formed during reactive ion etching of thin-film phase-change material layers in argon plasma can result in parasitic current paths in the structures. In this paper, thin-film structures with redeposited sidewalls are realized, and they are experimentally characterized by electrical resistance measurements on van der Pauw test structures. The impact of conducting sidewalls on contact resistance measurements and data extraction from cross-bridge Kelvin resistor structures is discussed. The error introduced in the electrical resistance measurements from these test structures is analytically modeled. The impact on the electrical performance of devices due to the formation of sidewalls is also discussed.
Item Type:Article
Copyright:© 2011 IEEE
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/76679
Official URL:https://doi.org/10.1109/TED.2010.2103318
Export this item as:BibTeX
HTML Citation
Reference Manager


Repository Staff Only: item control page

Metis ID: 277567