RF Circuit Design in Nanometer CMOS
Nauta, Bram (2007) RF Circuit Design in Nanometer CMOS. In: IEEE International Solid-State Circuits Conference, ISSCC 2007, 11-15 February 2007, San Francisco, CA, USA.
|Abstract:||With CMOS technology entering the nanometer regime, the design of analog and RF circuits is complicated by low supply voltages, very non-linear (and nonquadratic) devices and large 1/f noise. At the same time, circuits are required to operate over increasingly wide bandwidths to implement modern multi-band communication systems as these systems move toward software-defined radio.
These trends in technology and system design call for a re-thinking of analog and RF circuit design in nanometer CMOS. Dr. Bram Nauta will discuss innovations
intended to enable continued progress in spite of these challenges. These innovations include thermal noise canceling, poly-phase distortion canceling and 1/f noise reduction techniques applied to basic RF circuits.
|Item Type:||Conference or Workshop Item|
Electrical Engineering, Mathematics and Computer Science (EEMCS)
|Link to this item:||http://purl.utwente.nl/publications/76615|
|Export this item as:||BibTeX|
Daily downloads in the past month
Monthly downloads in the past 12 months
Repository Staff Only: item control page
Metis ID: 245159