An Initial study on The Reliability of Power Semiconductor Devices

Boksteen, B.K. and Hueting, R.J.E. and Salm, C. and Schmitz, J. (2010) An Initial study on The Reliability of Power Semiconductor Devices. In: STW.ICT Conference 2010, 18-19 Nov 2010, Veldhoven, The Netherlands.

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Abstract:	An initial literature study combined with some basic comparative simulations has been performed on different electricfield modulation techniques and the subsequent reliability issues are reported for power semiconductor devices. An explanation of the most important power device metrics such as the offstate breakdown (BV) and specific on-resistance (RON) will be given, followed by a short overview of some of the electrostatic techniques (fieldplates, RESURF e.g. [1]) used to suppress peak electric fields. Furthermore it will be addressed that the high current operation of these devices results in shifting electric field peaks (Kirk effect [2], [3]) and as such different avalanche behavior, resulting in (gate oxide) reliability issues unlike those of conventional CMOS.
Item Type:	Conference or Workshop Item
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/76311
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