Influences of voltage–current characteristic difference on quench development in low-Tc and high-Tc superconducting devices (Review)

Share/Save/Bookmark

Vysotsky, V.S. and Rakhmanov, A.L. and Ilyin, Yu. (2004) Influences of voltage–current characteristic difference on quench development in low-Tc and high-Tc superconducting devices (Review). Physica C: Superconductivity, 401 (1-4). pp. 57-65. ISSN 0921-4534

[img] PDF
Restricted to UT campus only
: Request a copy
364kB
Abstract:We review the approaches in analysis of quench development in LTS and HTS superconducting devices. Considering description of quench from very general point of view, we analyze how the change from sharp voltage–current characteristics with high-index n to smooth characteristics with low n and other material parameters affects quench dynamics. We compare traditional approaches for the description of the quench development in LTS devices with new approaches suggested for HTS devices. Reduction of index value n and high-operating temperature leads to a change of the quench development time, temperature rising rate that make it unnecessary to use the term “normal zone propagation” for describing quench in HTS devices.
Item Type:Article
Copyright:© 2004 Elsevier
Faculty:
Science and Technology (TNW)
Research Group:
Link to this item:http://purl.utwente.nl/publications/76261
Official URL:http://dx.doi.org/10.1016/j.physc.2003.09.011
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page

Metis ID: 223264