On the kinetics of platinum silicide formation

Faber, Erik J. and Wolters, Rob A.M. and Schmitz, Jurriaan (2011) On the kinetics of platinum silicide formation. Applied Physics Letters, 98 (8). 082102. ISSN 0003-6951

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Abstract:	In this work, the kinetics of platinum silicide formation for thin Pt films (50 nm) on monocrystalline <100> silicon is investigated via in situ resistance measurements under isothermal (197–275 °C) conditions. For Pt2Si diffusion limited growth was observed. For PtSi formation, however, no linear relation between silicide thickness and t was found. PtSi growth over time could be described using the Avrami relation rendering Avrami exponent n=1.4±0.1. Additionally, an effective activation energy EA=1.7±0.1 eV was derived using the Avrami k values. The findings are important for obtaining well defined silicide films and silicide-to-silicon contacts.
Item Type:	Article
Copyright:	© 2011 American Institute of Physics
Faculty:	Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:	Semiconductor Components (SC)
Link to this item:	http://purl.utwente.nl/publications/76147
Official URL:	http://dx.doi.org/10.1063/1.3556563
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