On the kinetics of platinum silicide formation

Share/Save/Bookmark

Faber, Erik J. and Wolters, Rob A.M. and Schmitz, Jurriaan (2011) On the kinetics of platinum silicide formation. Applied Physics Letters, 98 (8). 082102. ISSN 0003-6951

[img]PDF
Restricted to UT campus only
: Request a copy
127Kb
Abstract:In this work, the kinetics of platinum silicide formation for thin Pt films (50 nm) on monocrystalline <100> silicon is investigated via in situ resistance measurements under isothermal (197–275 °C) conditions. For Pt2Si diffusion limited growth was observed. For PtSi formation, however, no linear relation between silicide thickness and t was found. PtSi growth over time could be described using the Avrami relation rendering Avrami exponent n=1.4±0.1. Additionally, an effective activation energy EA=1.7±0.1 eV was derived using the Avrami k values. The findings are important for obtaining well defined silicide films and silicide-to-silicon contacts.
Item Type:Article
Copyright:© 2011 American Institute of Physics
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/76147
Official URL:http://dx.doi.org/10.1063/1.3556563
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page