Fabrication and interface electrical properties of Fe3O4/MgO/GaAs(100) spin contacts


Share/Save/Bookmark

Wong, P.K.J. and Zhang, W. and Xu, Y.B. (2010) Fabrication and interface electrical properties of Fe3O4/MgO/GaAs(100) spin contacts. In: 8th International Vacuum Electron Sources Conference and Nanocarbon, IVESC 2010, 14-16 October 2010 , Nanjing, China.

[img]
Preview
PDF
180Kb
Abstract:Moderately doped n-GaAs(100) substrates (n= 5 x 10 17cm3 ) with In Ohmic back contacts were annealed in the growth chamber with a base pressure of 1 x 10-8 mbar for 60 min at 830 K prior to the film stack growth. MgO layer was then grown by e-beam evaporation at a rate of 2 Amin-1 while the substrates were kept at 673 K, followed by postgrowth annealing of a 3.0 nm thick epitaxial Fe at 500 K in an O2 partial pressure of 5 x 10-5 mbar for 10 min. As for Fe3O4-GaAs(100), the tunneling barrier deposition was skipped. The epitaxial spin contacts were ex situ characterized by current-voltage (I-V) measurements. The junction size ranges from 25 to 200 μm square and were patterned by standard photolithography and wet etching using a 50 nm thick thermally evaporated Au layer as an etch mask.

Item Type:Conference or Workshop Item
Copyright:© 2010 IEEE
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/76077
Official URL:http://dx.doi.org/10.1109/IVESC.2010.5644245
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page