Direct Electroplating on Highly Doped Patterned Silicon Wafers
Vargas llona, L.D. and Jansen, H.V. and Elwenspoek, M.C. (2005) Direct Electroplating on Highly Doped Patterned Silicon Wafers. In: 16th MicroMechanics Europe Workshop, MME 2005, 4-6 September 2005, Göteborg, Sweden.
| PDF Restricted to UT campus only: Request a copy 648Kb |
| Abstract: | Nickel thin films have been electrodeposited directly on highly doped silicon wafers after removal of the native oxide layer. These substrates conduct sufficiently well to allow deposition using a periferical electrical contact on the wafer. Films 2 μm thick were deposited using a nickel sulfamate bath on both n+ and p+-type silicon wafers, where a series of trenches with different widths had been previously etched by plasma etching. A new, reliable and simple procedure based on the removal of the native oxide layer is presented which allows uniform plating of patterned substrates. |
| Item Type: | Conference or Workshop Item |
| Faculty: | Electrical Engineering, Mathematics and Computer Science (EEMCS) |
| Research Group: | |
| Link to this item: | http://purl.utwente.nl/publications/76054 |
| Export this item as: | BibTeX EndNote HTML Citation Reference Manager |
Repository Staff Only: item control page
Metis ID: 228386

Show download statistics for this publication
Show download statistics for this publication