Spin-injection device prospects for half-metallic Fe3O4:Al0.1Ga0.9As interfaces

Share/Save/Bookmark

Mansell, R. and Laloë, J.-B. and Holmes, S.N. and Wong, P.K.J. and Xu, Y.B. and Farrer, I. and Jones, G.A.C. and Ritchie, D.A. and Barnes, C.H.W. (2010) Spin-injection device prospects for half-metallic Fe3O4:Al0.1Ga0.9As interfaces. Journal of Applied Physics, 108 (3). 034507. ISSN 0021-8979

[img] PDF
Restricted to UT campus only
: Request a copy
174kB
Abstract:Electrical spin-injection across the Fe3O4:Al0.1Ga0.9As interface has been measured. We quantify this effect in an In0.2Ga0.8As:GaAs spin-light emitting diode optical device. The optical polarization signal is maintained from 4.2 up to 200 K without influence of the metal–insulator Verwey transition in the bulk of the Fe3O4 film. An incomplete oxidation at the interface may be detrimental for this device, as it has a similar spin-injection efficiency to that of Fe:Al0.1Ga0.9As. Ambient temperature operation of this device may be possible although the present polarization levels remain too low for practical spintronic applications. We demonstrate the first step in the integration of molecular beam epitaxy-grown magnetic oxides into III–V semiconductor devices.
Item Type:Article
Copyright:© 2010 American Institute of Physics
Faculty:
Electrical Engineering, Mathematics and Computer Science (EEMCS)
Research Group:
Link to this item:http://purl.utwente.nl/publications/75982
Official URL:http://dx.doi.org/10.1063/1.3462435
Export this item as:BibTeX
EndNote
HTML Citation
Reference Manager

 

Repository Staff Only: item control page